寬禁帶半導體 的英文怎麼說

中文拼音 [kuānjīndàibàndǎotǐ]
寬禁帶半導體 英文
wide bandgap semiconductor
  • 禁 : 禁動詞1. （禁受; 耐） bear; stand; endure 2. （忍住） contain [restrain] oneself
  • 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 體 : 體構詞成分。
  1. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  2. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
  3. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  4. Zno is a directed band semiconductor with a big binding energy. it has gained substantial interest because its large exiton binding energy ( 60mev ), which could lead to lasing action based exiton recombination even above room temperature, such as led, ld and so on

    Zno是一種寬禁帶的直接帶隙半導體材料，具有非常高的激子束縛能（ 60mv ） ，即使在室溫條件下激子也不會分解，因此可以被用作光發射器件，如led和ld等。
  5. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  6. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  7. Zinc oxide is a material widely used in many areas

    氧化鋅是一種多用途的寬禁帶半導體材料。
  8. Zno is a direct wide band - gap ii - vi semiconductor material

    氧化鋅是一種-族寬禁帶氧化物半導體材料。
  9. Wide bandgap semiconductor

    寬禁帶半導體
  10. Bulk silicon, with indirect band gap of 1. 12 ev, does n ' t emit visible light at room temperature

    本體硅為間接禁帶半導體，且禁帶寬度比較窄（ 1 . 12ev ） ，在室溫下很難發可見光。
  11. The mechanism of the luminescence has been discussed. bulk silicon, with indirect band gap of 1. 12ev does n ' t emit light at room temperature

    本體硅為間接禁帶半導體，且禁帶寬度較窄，室溫下很難發光。
  12. Zinc oxide, zno, a wide direct - gap semiconductor, attracts as much attention as gan in photoelectric research field

    Zno ，作為一種直接帶隙寬禁帶半導體材料，是繼gan之後光電研究領域又一熱門的研究課題。
  13. Traditionally, zno is used as surface acoustic wave devices ( saw ), bulk acoustic devices ( baw ), gas sensors, varistors, transparent electrodes, uv - detectors, and etc. in recent years, zno has gained more and more attention as a wide band semiconductor

    傳統上， zno薄膜被廣泛應用於聲表面波器件、體聲波器件、氣敏傳感器、壓敏電阻、透明電極、紫外探測器等領域。近年來， zno作為寬禁帶半導體光電材料的研究越來越受到人們的重視。
  14. According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily

    本文針對光催化技術應用中存在的tio _ 2光催化量子效率低，吸收利用太陽能光譜范圍有限，催化劑回收困難等問題，通過窄禁帶半導體cds （ e = 2 . 5ev ）的復合，對納米tio _ 2進行了改性研究，一方面，由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍，另一方面，由於能帶的交疊，提高了光生電子和空穴的分離效率，從而提高了薄膜的光催化降解效率。
  15. Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors, bulk - acoustic - wave devices, surface - acoustic - wave devices, varistors, light emitting, light detecting devices and so on. undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films

    Zno是一種新型的直接帶隙寬禁帶半導體材料，具有六方纖鋅礦結構，較高的激子束縛能（ 60mev ） ，較低的電子誘生缺陷和閾值電壓低等優點，在uv探測器、藍紫光led和ld等光電子器件領域有巨大的應用潛景。
  16. Recently there has been an extensive worldwide effort to synthesize bn films and investigate ultraviolet sensitive properties of bn, which has an important significance to the development of ultraviolet band detecting

    氮化硼薄膜材料的制備及其紫外光敏性能研究，是近年來寬禁帶半導體材料研究的熱點課題，對紫外波段信息探測領域的發展有重大意義。
  17. Titanium dioxide is a semi - conductor with wide band gap, and its photocatalysis operates only when it is irradiated under the ultraviolet radiation of sunlight, and also, the electron hole of tio _ 2 has very high reunited rate

    但由於tio _ 2為寬禁帶半導體，對太陽光的利用僅局限於紫外部分，並且tio _ 2的光生電子空穴復合幾率很高。
  18. Zinc oxide ( zno ) is a wide - band gap semiconductor that possesses excellent optical and electronic properties, and as a result it stimulates a broad range of researching interest. it shows great promising applications in ultraviolet lasers, solar cells, sensors and so on

    寬禁帶半導體zno材料由於具有優異的光電性能引起了人們廣泛的興趣，其在紫外激光器、太陽能電池、傳感器等方面有著廣泛的應用前景。
  19. In recent years, zno has gained more and more attention as a wide band semiconductor

    近年來， zno作為寬禁帶半導體材料的研究越來越受到人們的重視。
  20. The material of silicon carbide ( sic ) has many good properties due to its wide bandgap. it can be applied to high - temperature, high - frequency and high - power devices

    寬禁帶半導體碳化硅（ sic ）材料由於其本身具有各種優異特性，使得在應用於高溫、高頻、高功率器件方面具有特殊的地位。
分享友人
分享到 Line

分享到臉書