寬禁帶結 的英文怎麼說
中文拼音 [kuānjīndàijiē]
寬禁帶結
英文
wide-gap junction-
After some band structure analysis with the fast method, some interesting results are found for a 2d photonic crystal formed by a rectangular lattice of dielectric material gaas ( e = 11. 4 ) and air
對一種長方晶格結構的光子晶體，通過反復調節介質柱的長、寬和晶格的長、寬，得到該結構最大絕對禁帶寬度= 0 。Base on two - stage approach, we adjust experimental parameter to develop a new method ( three - stage approach ) to prepare c - bn thin films. the study proves that it is favorable to prepare bn thin films of high cubic phase content. depositing time and substrate bias voltage in the first stage are 5 min and - 180v respectively
根據si片上bn薄膜的反射光譜r （ ）和熔融石英片上bn薄膜的反射光譜r （ ）和透射光譜t （ ）各自獨立的計算了bn薄膜的光學帶隙，利用兩種方法分別計算立方相含量均約為55 %的bn薄膜的禁帶寬度為5 . 38ev和5 . 4ev ，其結果均和由經驗公式計算得到的結果非常接近。Zinc oxide is a ii - iv wide band - gap ( 3. 37ev ) compound semiconductor with wurtzite crystal structure
氧化鋅（ zno ）是一種具有六方結構的的寬禁帶-族半導體材料，室溫下能帶帶隙eg為3 . 37ev 。With a broaden and likely direct band gap, porous silicon has a different band structure to that of the bulk silicon. thus the porous silicon can emit at room temperature
多孔硅改變了體硅的能帶結構，使禁帶展寬，並由間接帶隙向直接帶隙轉變，實現了室溫發光。Zinc oxide as a wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure, is gaining importance for the possible application as a semiconductor laser, due to its ultraviolet emission at room temperature
寬禁帶zno半導體為直接帶隙材料，具有六方結構，較高的激子束縛能（ 60mev ） ，室溫下帶隙寬度為3 . 3ev 。Zno is a ii - vi semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, saw device, gas sensor and transparent electrodes et al for their excellent properties
氧化鋅（ zno ）是一種具有六方纖鋅礦晶體結構的寬禁帶ii - vi族半導體材料，由於其優良的特性，在太陽能電池、紫外探測器、聲表面波器件、氣敏傳感器、透明電極等方面得到了廣泛的應用。More recent studies show nanowires products with narrow dismeter distribution around 5 - 10mn and lengths ranging from several hundred nanometers to several micrometers can be obtained if the mixture solution of naoh and koh was replaced by koh solution. the nanowires were analyzed by a range of methods including powder x - ray diffraction ( xrd ), high resolution electron microscopy ( hrem ), selected area electron diffraction ( saed ), electron energy loss spectroscopy ( eels ), xrd and hrem image simulations. the structure of nanowires is determinded to be of the type of k2ti6oi3
利用x射線衍射（ xri ） ） 、高分辨電子顯微鏡（ hrtem ） 、選區電子衍射（ saed ） 、電子能量損失譜（ eels ）以及x射線衍射和高分辨像模擬等分析測試手段，初步分析了這種納米線的生長機理，探討了她的結構和光學性能，實驗結果顯示這種納米線具有kzti6o ; 3的結構，紫外一可見光吸收光譜顯示， kzti6ol3納米線禁帶寬度約為3 . 45ev 。Diamond is a remarkable material due to its special crystal structure, which shows high hardness, low friction coefficient, high thermal conductivity, high optical transparency, low permittivity and high band gap etc. cvd diamond films are widely used in mechanical coating, heat sinks, optical window, semiconductor devices and other application fields because of its low price and high performance
金剛石的特殊晶體結構使其成為一種性能優異的功能材料，它具有高硬度、低摩擦系數、高熱導率、高透光率、低介電系數和高禁帶寬度等性質。化學氣相沉積制備金剛石膜成本低、質量高，廣泛應用於工具塗層、熱沉、光學窗口、半導體器件等方面。Zno is a - semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, lighting displayer, saw device, gas sensor et al for their excellent physical properties
氧化鋅（ zno ）是一種具有六方纖鋅礦晶體結構的寬禁帶-族半導體材料，由於其優良的物理特性， zno薄膜在太陽能電池、紫外探測器、發光顯示器件、聲表面波器件、氣敏傳感器等方面得到了廣泛的應用。Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors, bulk - acoustic - wave devices, surface - acoustic - wave devices, varistors, light emitting, light detecting devices and so on. undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films
Zno是一種新型的直接帶隙寬禁帶半導體材料，具有六方纖鋅礦結構，較高的激子束縛能（ 60mev ） ，較低的電子誘生缺陷和閾值電壓低等優點，在uv探測器、藍紫光led和ld等光電子器件領域有巨大的應用潛景。Fe layers of different thickness have been converted to fes2 thin films by thermal sulfidation. the influence of the thickness on the crystal structure, electrical resistivity, carrier concentration, absorption coefficient and energy gap of fes2 thin films have been investigated
採用硫化不同厚度的fe膜制備了不同厚度的fes2薄膜的方法，研究了不同厚度fes2薄膜的晶體結構、電阻率、載流子濃度、光吸收系數以及禁帶寬度。Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo, tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo. as we know, band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices
利用mg _ xzn _ （ 1 - x ） o薄膜，可以在保持zno六方纖鋅礦（ wurtzite ）結構的同時有效調節調節薄膜的禁帶寬度，制備出基於氧化鋅的量子阱、超晶格及相關的光電器件，如基於氧化鋅的紫外光探測器、紫外發光二極體和紫外激光二極體等光電子器件。Using a general approach for designing two - dimensional photonic crystals of square lattice, we have found many structures whose absolute band gap hi the low or high frequency range is much larger than what has been reported in the previous literature. to speed up the computation, a fast plane - wave expansion method is introduced for calculating the band structures for such special photonic crystals
最後以gaas和te材料為基礎，通過像素分析法，從理論上提出了多種在低頻、高頻區域有大絕對禁帶的二維光子晶體，並且其禁帶寬度顯著優于所有已有文獻報道的光子晶體結構。With a broad and likely direct band gap, porous silicon has a different band structure from that of the bulk silicon. thus the porous silicon can emit visible light at room temperature
多孔硅改變了本體硅的能帶結構，使禁帶寬度展寬，並由間接禁帶向直接禁帶轉變，實現了室溫發光。It had many great merits such as excellent optical properties, low - cost and easiness to handle which offered promising prospects in the filed of self - cleaning, anti - fog and so on. the hydrophilicity of tio2 was influenced by many factors such as crystal structure, surface morphology, band gap, etc. preparing method and doping element would take effect on the properties of the film
Tio _ 2薄膜的親水性能受到結構形貌及其禁帶寬度的影響，銳鈦礦相的tio _ 2具有最好的親水特性；平整均勻的表面不僅有利於水的鋪展，而且透光率高，適于玻璃鍍膜；薄膜禁帶寬度降低有利於提高光能的利用率。When bath temperature t = 40oc, the deposited films have good surface and structure, the composition ratio sn / s is 1, and its direct band - gap eg is 1. 31ev
當溫度為40oc時，所制備的薄膜具有較好的表面形貌，其成分比sn / s為1 ，薄膜的結晶性較好，且其直接禁帶寬度為1 . 31ev 。分享友人