射程積分譜 的英文怎麼說

中文拼音 [shèchéngjīfēnpǔ]
射程積分譜 英文
integral range spectrum
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 程 : 名詞1 （規章; 法式） rule; regulation 2 （進度; 程序） order; procedure 3 （路途; 一段路） journe...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 分 : 分Ⅰ名詞1. （成分） component 2. （職責和權利的限度） what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] （料想） judge
  • 譜 : Ⅰ名詞[書面語]1 （按類別或系統編成的書或冊子等） table; chart; register 2 （指導練習的格式或圖形）...
  • 射程 : range （of fire）; reach; throw; flightshot; gunshot; carry; actual range; firing range
  • 積分 : 1. [數學] integral; integrate; integration 2. [體育] （積累的分數） accumulate points
  1. Uranium isotopes and their daughters emit - rays and x - rays during the decay process, their peak area and relative efficiency can be calculated through spectrum analysis

    在衰變過程中，鈾及其衰變子體放射出射線和特徵x射線，通過能譜分析可以求出它們的峰面積和相對探測效率。
  2. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  3. Therefore, the diagnostics of electrical and optical characteristic of plasma form the basic respects of plasma diagnostics. the author reports in detail in the dissertation the experimental investigation on the phenomena of some common discharge systems at typical operation status such as dc glow ; rf ( radio frequency ) glow and microwave ecr ( electron cyclotron resonance ) discharge

    創新之處： （ 1 ）提出了雙原子分子轉動分辨發射光譜的擬合方法，並利用擬合方法進行了氮氣直流輝光放電產生的第一負帶轉動分辨光譜和磁控濺射沉積cnx膜過程中cn基團的振動帶的轉動線型擬合，獲得了相應的轉動溫度。
  4. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  5. The intermediate - temperature sofc ( solid oxide fuel cell ) ’ s electrolyte with perovskite - type lsgm ( la _ ( 0. 9 ) sr _ ( 0. 1 ) ga _ ( 0. 8 ) mg _ ( 0. 2 ) o _ ( 3 - ) ) was synthesized using advanced pechini method and solidification method. the thermal and electrical properties of the sintered samples ( synthesized by two different methods ) were measured and compared by thermal expansion and ac impedance spectroscopy ; the phase transformation process and inner structure were measured and compared by xrd, dta - tg and ac impedance spectroscopy. the research results show that the electrolyte synthesized by advanced pechini method has several advantages, such as fine pre - powders, low sintering temperature, reduced or eliminated impurity phases and high conductivity etc. so, the apm is ideal method to synthesize lsgm

    採用改進的檸檬酸法（以檸檬酸和edta乙二氨四乙酸為復合絡和劑，檸檬酸為燃料）和固相法分別制備了具有鈣鈦礦結構的中溫固體氧化物燃料電池的電解質材料lsgm （ la _ （ 0 . 9 ） sr _ （ 0 . 1 ） ga _ （ 0 . 8 ） mg _ （ 0 . 2 ） o _ （ 3 - ） ） ，用差熱?熱重分析（ dta / tg ） 、 x光衍射分析（ xrd ） 、交流阻抗譜技術（ ac - impedancespectra ） 、比表面積分析（ bet ）和燒結收縮率曲線等手段對產物的熱分解過程、物相轉變和內部結構等進行了表徵，並對由這些粉體燒結而成的固體氧化物燃料電池的電解質材料的電導率進行了檢測。
  6. In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %

    按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
  7. On the other hand, the multi - level fast mutipole algorithm ( mlfma ) which based on the integral equation method can obtain the result with great accuracy, but this method accounts in all the couplings between every sub - scatter objects, it needs much more to store all of the information, and because of the rigorous integral on the spectrum space the computational complexity is also enormous

    相對於一些傳統的方法如幾何光學方法，幾何繞射方法，彈跳射線方法有著更高的精度和更廣的適用范圍。但是由於其基於積分方程方法，需要對全局中所有的子散射體之間的相互耦合加以考慮，從而導致在求解電大尺寸目標的散射問題時需要巨大的存儲空間。同時由於其在譜域上嚴格積分導致計算量也很大。
  8. In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy

    本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。
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