掩膜 的英文怎麼說

中文拼音 [yǎnmó]
掩膜 英文
mask
  • 掩 : 動詞1 （遮蓋; 掩蔽） cover; hide 2 （關; 合） shut; close 3 [方言] （被卡住） get squeezed [pinch...
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  1. The final ic is made by sequentially transferring the features from each mask, level by level, to the surface of the silicon wafer.

    按照順序從每一塊掩膜版上將圖形一層一層地轉移到矽片的表面，就制得了成品集成電路。
  2. In early ic fabrication practice, etch bias was usually dealt with by introducing an appropriate amount of compensation in the masking layer.

    在早期的集成電路製作實踐中，刻蝕偏差通常是通過在掩膜層上引入一個適量的修正來處理的。
  3. Lithography - the process used to transfer patterns onto wafers

    光刻-從掩膜到圓片轉移的過程。
  4. The substrate is first covered by a mask.

    首先在基片上覆蓋一個掩膜片。
  5. With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission

    通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。
  6. Determining effective adhesion of photoresist to hard - surface photomask blanks and semiconductor wafers during etching

    測定在蝕刻期間光致抗蝕劑同硬表面光掩膜坯及半導體片的有效粘附性
  7. Apropos of micromanufacturing technologies of silicon - based mems correlative to tini sma, patterning of tini thin film is one of the key processes, in order to photoetch thicker tini films ( more than 10

    同時， pt掩膜在hfno3 ho腐蝕系統中具有抗腐蝕力強、不脫落的特點，是腐蝕較厚tei膜（ 5nm ）的理想掩膜材料。
  8. An image of the patterns on the mask is projected onto the resist-coated wafer, which is many centimeters away.

    掩膜板上圖形的像被投影到許多厘米以外的塗有抗蝕劑的片子上。
  9. This work is partially supported by the high technology research and development programme of china

    本課題來源於國家高技術研究發展計劃（ 863計劃）課題:掩膜管理和晶圓處理系統的研究。
  10. In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask

    在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。
  11. P - type silicon crystal plates have been adopted in the text, which are formed mask sio2 by heat - oxygenation. and figures are diverted by normal light etching technology

    本文採用p型單晶矽片，由熱氧化形成sio _ 2掩膜層，標準光刻工藝進行圖形轉移，用koh溶液濕法刻蝕製作倒四棱錐腐蝕坑列陣。
  12. "pattern transfer" refers to the transfer of a pattern, defined by a masking layer, into a film or substrate by chemical or physical methods that produce surface relief.

    「圖形轉移」是指把掩膜層所確定的圖形通過能產生表面轉移的化學或物理方法轉移到薄膜上或襯底上去。
  13. A novel apparatus to measure the step height of the mask by means of non - contact method

    一種新型的非接觸式掩膜板臺階高度測量儀
  14. The epitaxial struture for ld is an ingaas / gaas / algaas ssqw grin sch structure and the width of the array bar ia 4mm. the low theshold current 2. 9a the output power 20w at 17. 5a have been achieved by sioi isolation, ohmic contact and facet coating processes. the central wavelength is 979nm. at the same time, model analyses on the structure of the ssqw ld and the fabrication processes have been made for further research

    激光器的生長結構採用ingaas / gaas / algaas分別限制應變單量阱線性緩變折射率波導結構，列陣條寬為4mm ，通過sio _ 2掩膜，歐姆接觸和腔面鍍膜等工藝，實現了閾值電流為2 . 9a ，驅動電流為17 . 5a時輸出功率為20w 。
  15. More than ic manufacturing, smic provides customers with a seamless flow of support with services that include design support, mask making, and wafer probing

    除提供晶元生產，中芯國際還為客戶提供全方位的一站式服務，包括輔助設計、光掩膜版製造以及硅圓片上測試。
  16. The main contents and contributions include : ( 1 ) it has been proposed to uniform the temperature distribution through space modulating the intensity incident on the surface of substrate using a mask the emphasis of this method is to find the laser intensity distribution that can realize the temperature uniformity. the results show that when the mean temperature rise in the processed area is 500 k, the maximum temperature difference is 3. 5 k, which can meet the accurancy requirement of temperature uniformity

    計算結果表明，採用四環帶結構的掩膜板對入射光進行調制，在0 . 2倍光斑半徑區域內平均溫升達到500k時，最大溫差只有3 . 5k （ 0 . 4倍半徑處僅有4 . 5k左右） ，可以在激光微細加工區域得到比較滿意的溫度分佈。
  17. Test method for distortion of optical lenses used in photomask fabrication

    光掩膜製作用光學透鏡畸變的試驗方法
  18. Vacuum deposition mask

    真空沉積掩膜
  19. Investigation of ion depth profile in silicon implanted by focused ion beam

    聚焦離子束無掩膜注入單晶硅離子濃度濃度分佈的研究
  20. Bipolar mask bus

    雙極掩膜總線
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