摻鋅 的英文怎麼說

中文拼音 [chānxīn]
摻鋅 英文
zinc impurity p-type detector
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 鋅 : 名詞[化學] （金屬元素） zinc （zn）
  1. Iron and zinc doping can lower the transformation temperature of anatase to rutile

    鐵及鋅的摻雜會降低銳鈦晶向金紅石的轉變溫度。
  2. Azo ( aluminums zinc oxide films ) which have many characteristics such as high ratio of performance to price and innoxious are the replacer of ito ( indium tin oxide films )

    摻鋁的氧化鋅薄膜（ azo ）具有性價比高、無污染等特點，是摻錫氧化銦（ ito ）的最佳替代產品。
  3. The results of sem indicated that the mixture was important for the morphology of the whiskers

    結果表明碳氫化合物粉末和納米氧化鋅粉末2種摻入物對晶須形貌的影響很大。
  4. The coexistence of co and coo additive in the electrodes has the best effect on the electrochemical properties. however, in this paper, the zinc additive did not promote the properties of the electrode, the discharge capacities and the cyclic life of both electrodes using nano ni ( oh ) 2 and spherical ni ( oh ) 2

    而鋅添加劑在本論文的研究中並沒有起到積極作用，納米ni （ oh ） _ 2電極和球形ni （ oh ） _ 2電極的電極容量和循環壽命在摻鋅添加劑后都有所降低。
  5. Moreover, the two - step heat treatment method was utilized in the preparation of the films, the films prepared by the first coating with 550 ? heat - treatment and the second coating with of with 500 ? heat - treatment ( b type films ) were highly c - axis oriented with smooth, dense and uniform surface morphology

    此外，結合高溫和低溫熱處理方法優點的兩步熱處理法得到的b型薄膜同時具有較好的c軸擇優取向性和更為平整均勻的表面形貌。另外，在硅基板上也制備出了良好的c軸擇優取向性的摻雜氧化鋅薄膜。
  6. The main transparent conductive oxide include indium tin oxide ( ito ), al - doped zno ( azo ), tin antimony oxide ( ato ) etc. ito is important material of making the transparent electrode

    目前應用廣泛的透明導電氧化物薄膜主要有氧化銦錫薄膜（ ito ） 、氧化鋅鋁膜（ azo ） 、摻銻氧化錫（ ato ）等。銦錫氧化物（ ito ）是製造透明電極的重要材料。
  7. Using this expression to calculate the optimum rare - earths oxides ( nd2o3, ceo2 and la2o3 ) content of zinc oxide varistor, the quantitative calculation results are in accordance with the experimental results approximately. the double shottky potentical barrier was showed in form of catoon using flash, from which we can comprehend the conduction theory of zinc oxide varistor. the electrical properties of varistor can be improved depend on it

    運用固體物理、半導體和電子薄膜材料的相關理論，建立數學模型，推導出了最佳摻雜含量的理論計算式，並將之推廣到高溫燒結的氧化鋅壓敏陶瓷材料，運用這一計算式定量計算ndzo3 、 ceoz和lazo3等稀土摻雜的最佳含量，計算結果與本文的實驗結果比較符合。
  8. Moreover, we observed the concentration profiles of the ion - implanted samples and the diffused samples by c - v method, and discovered that the carrier concentration decreased with increasing of the diffusion depth. whereas, the peak concentration of the ion - implanted samples located at 0. 248151 u m beneath the surface and the peak concentration of the diffused samples located at the surface. furthermore, the carrier concentration of mnas source diffused sample as high as 102 % m3can be obtained, and the surface was much smoother compared with that of the pure mn source diffused sample

    發現兩種摻雜方法的載流子濃度大體上都是隨著擴散深度的增加而下降，不同的是離子注入樣品的載流子最高濃度處于離表面深度0 . 248151 m處，而擴散樣品的載流子最高濃度處于表面，並摻錳（ mn ）砷化鋅（ gaas ）材料性質的研究且還發現相對于純mn源擴散樣品來說， mnas源擴散樣品的表面較為光滑，且表面載流子濃度高達1020 cm 』數量級。
  9. Nine kinds of vinegars and an acetic acid resolution were measured by the gas sensors array which were composed of ten doped nano - zno thick film sensors

    摘要利用由10個摻雜納米氧化鋅厚膜氣敏傳感器組成的陣列對9種食醋和乙酸溶液進行了測量。
  10. The results of antibacterial glass materials showed : two kinds of glass carriers can all turn out the antibacterial glass which has excellent antibacterial property, when the raw material is mixed with 2 % silver antibacterial agent or 2 % ag - zn compound antibacterial agent, we can produce ideal antibacterial glass with high chemical stability and soluble properties, whose antibacterial - ring grow to more than 4mm, mic value around 200 g / ml and mbc value around 4000 g / ml

    研究表明：兩種玻璃載體均可制備出效果良好的抗菌玻璃材料，在玻璃配合料中摻加2的銀抗菌劑或者摻加2的銀、鋅復合抗菌劑，可得到抑菌圈大於4mm ， mic值在200 g ml左右和mbc值在4000 g ml左右的較為理想的抗菌玻璃。玻璃樣品具有良好的穩定性和緩釋性能。
  11. Walter water and yin - shiang yan, crystalline properties of strontium doped zno films, ( 2005 ) international symposium on nano science and technology

    水瑞? ，楊引祥，鈣和鍶摻雜之氧化鋅薄膜在拉福波感測器上的應用，中國材料科學年會（ 2005 ）
  12. Among these methods, magnetron sputtering is the most widely used technique for preparing thin films owing to its high deposition rate and good uniformity etc. in my experiment, zao films were prepared by dc magnetron sputtering in pure argon gas atmosphere using zno target mixed with al2o3 ( lwt %, 2wt %, 3wt %, 4wt % respectively ) and the films were figured by xrd, sem, xps, afm and ftir, uv photometer

    本研究課題以氧化鋅鋁靶為靶材，採用直流磁控濺射工藝在純氬氣氣氛中沉積zao薄膜。靶材中al _ 2o _ 3的摻雜比例分別為1 、 2 、 3 、 4 。用xrd 、 sem 、 xps 、 afm和紅外、紫外分光光度計等測試手段對沉積的薄膜進行了表徵。
  13. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
  14. The result of the xrd indicated that the production structure was wurtzite, which was mixed with hydrocarbon

    射線衍射結果表明，摻入了碳氫化合物的反應產物的晶須屬六方纖鋅礦結構。
  15. In the discussion of visible luminescence mechanism, in order to prove that the oxygen vacancies or defects distribute on the surface of nanocrystallites, we presented to prepare the zno thin films with doped mn and studied the photoluminescence of zno : mn

    在可見發光機制探討中，為了證明氧空位或缺陷是分佈在納米晶表面，我們提出氧化鋅中摻雜錳（ zno ： mn ） ，研究了zno ： mn薄膜的光致發光（ pl ） 。
  16. By using the techniques including the zinc coating of cold rolled steel plate and the surface spray, the fiber cable distribution plate adopts spraying material doped with fire retardant materials. it is characterized as light, flexible, firm and durable. it has reliable cable inlet, grounding and fixing and the splicing between theterminal end and pigtail. users can select unit or ring flange amount according to their practical needs

    採用鍍鋅處理冷軋鋼板和表面噴塗的工藝，光纖分配盤採用摻雜阻烯材料的噴縮材質，輕便靈活，又結實耐用，具有光纜引入固定和保護功能光纜終端與尾纖熔接功能，用戶可根據實際需求選配單元數量或法蘭盤數量。
  17. The difficulty can be overcomed that the n atom is not easy to be doped into zno. if we control the annealing condition, the residual nitrogen atoms will become acceptors in zno : n films

    通過這種方法可以克服n原子不容易慘雜進氧化鋅的困難，並且可以通過控制退火過程來控制n原子< wp = 5 >的摻雜濃度。
  18. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。
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