摻雜單品 的英文怎麼說

中文拼音 [chānzádānpǐn]
摻雜單品 英文
doped single crystal
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 品 : Ⅰ名詞1 （物品） article; product 2 （等級; 品級） grade; class; rank 3 （品質） character; qualit...
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation

    結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。
  2. The main contents and important results of this paper are as following : strong blue cooperative up - conversion luminescence is observed in various host materials single doped yb3 + ions with naked eyes at room temperature under 980nm excitation. moreover there exist rich emission lines and peculiar ratio of luminescence intensity in all samples. intense green and blue up - converted luminescence is observed in yb3 + - ho3 + co - doped pbf2 - znf2 based materials with 930 nm diode light excitation at room temperature

    其主要內容與得到的結論如下： （ 1 ） yb ~ （ 3 + ）單摻雜不同基質材料組成的氟氧化物在980nm激光激發下發射出明亮的yb ~ （ 3 + ）離子的合作上轉換藍色熒光，同時這些樣品具有極為豐富的熒光發射，有著特別的色比關系。
  3. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。
  4. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。
  5. 4 ) the thz resistivity of doped zn0. 95cd0. 05te < 110 > crystals changes with different doping following the similar way as the dc resistivity, which results in different thz wave generation efficiency

    對于有摻雜的zn吧人內。 p 11o單晶，通過不同摻雜可以改變zn95cd ste叫單晶的電阻率，從而改變樣品產生thz輻射的效率。
  6. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
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