摻雜單晶 的英文怎麼說

中文拼音 [chānzádānjīng]
摻雜單晶 英文
doped single crystal
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. Practice for conversion between resistivity and dopant density for boron - doped and phosphorus - doped silicon

    摻硼磣磷硅單晶電阻率與摻雜劑濃度換算規程
  2. It has been found that all the elements in the addition act respectively in the way that affect the material ' s properties during the calcining process and the increase of the pms / pzn ratio can weaken the stability of the crystal structure of the sintered ceramics and cause the crystal structure transformation from the tetragonal to the rhombohedral as well

    發現多元壓電陶瓷材料中，無論是主加組元還是微量摻雜，預燒階段，它們在陶瓷中的作用都表現為單獨離子對陶瓷結構和性能所起的作用。燒結后，隨著pms pzn相對量的提高，陶瓷晶體結構由四方相向三方相轉化，同時穩定性下降。
  3. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  4. The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface

    實驗研究了快速熱擴散（ rtd ） ：通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性，發現： 1 ）此樣機的溫度場在空間分佈上是均勻的； 2 ）快速熱擴散可以比傳統擴散快3倍的速度進行擴散； 3 ）在擴散溫度和摻雜磷源相同的條件下，與傳統擴散相比，快速熱擴散將雜質向結更深的地方推進。
  5. In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth

    本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。
  6. Tremendous efforts are underway on the lithium manganese oxides which are considered to attractive alternatives in term of cost, abundance and nontoxicity for lithium ion battery. the spinel li4mn5o12 and cation - doped lithium manganese oxides were synthesized by sol - gel method which is considered as a promising method

    本文以立方晶系尖晶石結構的富鋰鋰錳氧化物為主要研究對象，以檸檬酸為配合劑，用溶膠-凝膠法合成了純凈的單相尖晶石li _ 4mn _ 5o _ （ 12 ）以及摻雜產物。
  7. The difference between the magnetic moments for the samples with respective doping level can be ascribed to the variation of the competition between thermal effect and the magnetic coupling. based on the spin orientation rotation of dy sublattice as well as the antiferomagnetic coupling between dy sublattice and mn sublattice, we successfully elucidate the changes of magnetic structure in perovskite compounds s. electron spin resonance ( esr ) study on perovskite compounds on the basis of chapter 4, we give further study on micromagneticism of dy - doping perovskite compounds la0. 67 - xdyxsr0. 33mno3

    其中第一節簡單回顧了早期對a位雙稀土元素元素摻雜鈣鈦礦化合物的研究，早期研究較多的是替代元素的離子半徑變化上，由於替代離子半徑的改變，使a位平均半徑變ylll化，致使公差因子改變，使mn o長、鍵角變化，晶格效應的作用使化合物的磁性、電性、 cmr效應發生改變。
  8. Preparation of semiconductor cubic boron nitride crystalline with silicon diffusion

    硅摻雜半導體立方氮化硼單晶的制備
  9. 6 ) the self - absorption of thz waves in doped zn0. 95cd005te < 110 > crystals is the main factor which affects the generation efficiency of thz waves

    對于不同摻雜的zll095cd005te 110單晶，晶體產生thz輻射效率不同的主要原因是晶體對thz輻射的吸收不同。
  10. Our results explain the mechanisms of the composition and doping dependent thz radiation efficiency for the different crystals. experimental results in this thesis are useful for growing eo crystals with high performance, and suggest that more parameters are required for better characterization of this kind of crystals as thz wave emitters. the main results and conclusions are listed as follows : 1 ) experimental measurements with low cd composition zn1 - xcdxte < 110 > crystals ( 0 < x < 0. 25 ) as thz emitters indicate the optimum composition of x = 0. 05

    在國際上，我們首次用實驗研究了不同組分、不同摻雜的zn _ （ 1 - x ） cd _ xte < 110 >單晶（ x = 0 0 . 25 ）對thz輻射的吸收情況和它們產生thz輻射的相位匹配情況，並首次從晶體對thz輻射的吸收和晶體的相位匹配角度解釋了這些晶體產生thz輻射效率不同的原因。
  11. In this thesis, we study the thz pulse generation efficiency of the < 110 > - oriented zn1 - xcdxte crystals with various composition ratios and doping levels, using thz time - domain spectroscopy. it is found that both absorption and phase matching condition play important role. it is the first time to systematically study < 110 > - oriented zn1 - xcdxte crystals with various composition ratios and different doping levels using thz time - domain spectroscopy

    本論文中，我們利用thz時域光譜系統對不同組分、不同摻雜的zn _ （ 1 - x ） cd _ xte < 110 >單晶（ x = 0 0 . 25 ）作為thz輻射材料的性能和光譜響應進行了研究，發現晶體對thz輻射的吸收和晶體的相位匹配是影響晶體產生thz輻射效率的重要因素。
  12. The band was previously associated with f - type color centers and v - type color centers, as analyzed in x - ray irradiated ysz sample. however, the absorption band observed in our experiments has a shift towards the longer wavelength ( red shift ) as comparing with that in the x - ray or neutron irradiated ysz spectra. this shift may mainly due to large local distortions near the f - type centers and the v - type centers and the presence of multiple color centers

    本文通過光吸收、光熒光、 tem 、 xps測試及trim96計算分別研究了不同注量xe ~ +注入ysz前後光學性能和缺陷形態變化，以及ni ~ +注入對不同摻雜單晶al _ 2o _ 3結構和光學性能的影響，得到以下結果： （ 1 ） ysz注量達到10 ~ （ 16 ） cm ~ （ - 2 ）時，開始出現由f型和v型色心重疊而產生的吸收帶，與x射線、中子輻照相比，重離子輻照產生了更為復雜的缺陷復合體而導致吸收峰紅移。
  13. The lattice constants were refined using celref program. when implanted c / fe ions ratio is 0. 5 %, the p lattice is expanded, though c atom is much smaller han si. this is probably due to the solid solution in interstitial state

    單胞的間隙位置，形成間隙型固溶體，使晶格膨脹；當摻雜的碳離子含量增加到一定的程度時，趨向于形成置換固溶體，因為碳和硅屬同族元素價態相同，所以碳會置換p 。
  14. In the new structure, a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process. the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin

    新結構用三重擴散的方法在n ~ -單晶片上引入了n ~ +緩沖層，仍然保留了npt - igbt中薄而輕摻雜p層和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - （ n ~ + ）雙層復合的薄耐壓層（即薄基區）的優點。
  15. High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique. successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out

    本文研究了在gaas和gap襯底上，本徵型和n型al摻雜zns基單晶薄膜的分子束外延生長，獲得了高質量的單晶外延薄膜。
  16. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。
  17. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
  18. Test method for deep level el2 concentration of undoped semi - insulating monocrystal gallium arsenide by measurement infrared absorption method

    非摻雜半絕緣砷化鎵單晶深能級el2濃度紅外吸收測試方法
  19. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。
  20. In this paper, firstly, the effect of heavy boron - doping on oxygen precipitation was investigated. after annealed at different conditions, it is found that oxygen precipitation is enhanced by heavily boron doping, especially at high temperature

    本文研究了直拉重摻硼單晶硅的氧沉澱行為，著重研究了直拉重摻硼硅單晶中的氧沉澱的熱處理、內吸雜、 rtp處理等性能。
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