擴程電阻 的英文怎麼說

中文拼音 [kuòchéngdiànzǔ]
擴程電阻 英文
swamping resistance
  • 擴 : 動詞（擴大） expand; enlarge; extend
  • 程 : 名詞1 （規章; 法式） rule; regulation 2 （進度; 程序） order; procedure 3 （路途; 一段路） journe...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 電阻 : （物質阻礙電流通過的性質） resistance; electric resistance （電路中兩點間在一定壓力下決定電流強度...
  1. In the first part of this paper, mn ( iii ) / mn ( ii ) couple in h2so4 was firstly applied as the positive couple to this system, i. e. redox flow cell. its chemical, electrochemical properties, redox kinetics and related parameters were characterized and discussed by rotating disc electrode ( rde ), cyclic voltammetry ( cv ), a. c. impedance ( a. c. imp ), chronoamperometry, tafel curve, and galvanostatic charge / discharge techniques. conclusions have been drawn as follows : 1. the electrochemical kinetics of mn ( iii ) / mn ( ii ) redox couple in 6. 3m h2so4 solution were studied by means of rotating disc electrode ( rde ) technique on platinum electrode

    本文第一部分首次成功地將酸性介質中的mn （ iii ） / mn （ ii ）電對應用於氧化還原液流電池這一新型儲能裝置的正極活性材料，通過旋轉圓盤（ rde ） 、循環伏安（ cv ） 、交流阻抗（ a . c . imp ） 、恆電位階躍、 tafel實驗以及mn （ iii ） / mn （ ii ）單電極的恆流充放電實驗，我們得出以下結論： 1 .在旋轉圓盤電極上，不同轉速范圍，不同的極化過電位， mn （ ） / mn （ ）體系氧化還原電極過程的控制步驟不同，電荷傳遞、擴散傳質可分別或聯合成為控制步驟。
  2. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  3. 2, design a structure makes the liner output higher to 160mv with a liner input about 150 in bridge of spin - valve gmr. in comparison of some typical mr angular sensors it ' s output make a great progress

    2 ，設計了一種結構使自旋閥gmr晶元組成的橋路輸出電壓信號線性區達到約150 ，輸出幅度達到了160mv ；相比一些典型的磁阻非接觸式角度傳感器，量程獲得了可觀的擴展。
  4. The results of the eis examination indicated that the electrochemical reaction of the snsb alloy electrode was a typical process jointly managed by both electrochemical reaction and diffusion

    電化學阻抗分析結果表明，錫銻合金電極過程是典型的電化學和擴散共同控制的特徵。
  5. The result indicates that when the air content of the concrete changes from 1 to 4 percent, the polarized resistance of the identical flow electricity time increases along with the increment of the air content, the corrosion current density reduces along with the increment of air content, the chloride ion diffusion coefficient reduces with the increment of air content ; when air content changes from 4 to 6 percent, the rule of the change of the polarized resistance and corrosion current density happens to be the opposite, the diffusion coefficient of the chloride ion increases along with the increment of air content ; when the air content is 4 percent, the rust - resisting property of concrete is best, and so is the impermeability of the concrete

    試驗結果表明，混凝土的含氣量在1 . 9 % ~ 4 . 2 %變化時，極化電阻隨含氣量的增大而增大，腐蝕電流密度隨含氣量的增大而減小， cl -擴散系數隨含氣量的增大而減小;當含氣量在4 . 2 % ~ 6 . 4 %變化時，極化電阻、腐蝕電流密度和cl -擴散系數的變化規律則相反;當含氣量為4 . 2 %時，抗鋼筋銹蝕性能最佳，抗滲性最好。 cl -擴散系數與鋼筋銹蝕參數在一定程度上有著良好的相關性，抗滲性的結果較好地反映了混凝土中鋼筋銹蝕的程度，可以用cl -擴散系數評價引氣混凝土的抗鋼筋銹蝕性能。
  6. The performance of liquid dmfc is evaluated as a function of the composition and structure of meas, hot - pressing condition and activation process by means of v - i polarization and ac impedance spectrometry

    本研究採用電流電壓極化曲線和交流阻抗譜方法，對膜電極的熱壓條件、擴散層和催化劑層的組成與結構、電極活化過程等因素對液體進料dmfc性能的影響進行了全面的研究。
  7. 4 design of hb - led is focused on mqws and top layer. compensatory mqws for led active layers have led to good results follow the analysis in former two chapters. systematic analysis of current injection and light output via external quantum efficiency of hb - led showed mat the optimum of top layer of hb - led is appeared to be between 15 u m and 20 u m, and at least is 5 u m

    根據前兩章的分析設計出補償應變多量子阱的有源區結構；然後分析計算了器件的電注入和光輸出過程，指出降低頂層的電阻率和增加頂層厚度都可以使注入電流更有效地擴展到上電極外面的區域，增加厚度還可以增加器件的側面出光。
  8. The electrochemical impedance spectroscopy of anodic reaction shows that the formation of black nickel was mainly controlled by electrochemical reaction at low anodic potential, and is mainly controlled by electrochemical reaction and diffusion at high anodic potental. with the increasing of anodic potential., the formation of black nickel is still controlled by electrochemical re

    陽極反應的電化學阻抗譜表明，氧化電位較低時ni （ oh ） :氧化生成黑鎳的過程主要受電化學反應所控制，電位較高時，黑鎳形成過程主要受電化學反應及擴散混合控制，電位進一步增加，析氮反應占據主導優勢，陽極氧化過程仍主要受電化學反應及擴散混合控制。
  9. Finally, the paper analyzes transmission congestion to the line attain over a long period of time what degree should consider an extension or build a new line to eliminate congestion, from opportunity cost angle. the paper gives a presentation on the challenge that transmission network planning faces and its basic way of thinking in power market environment. the paper also proposed a methodology for transmission network planning based on reformative congestion sensitivity indices

    文章最後，從機會成本角度分析了長期阻塞線路的阻塞達到何種程度時該考慮擴建或新建線路用於消除阻塞，簡要介紹了電力市場環境下電網規劃面臨的挑戰及其基本思路，並提出了改進的基於阻塞靈敏度因子的電網規劃方法，發展和豐富了電力市場環境下電網的輸電阻塞管理研究。
  10. The experimental instruments, apparatus and the means to prepare all the samples are introduced in the first section. in section 2, the experimental system including the oxidization system and diffusion system, are introduced therein. in section 3, the samples preparation including the pre - deposition, redistribution and re - oxidization, the samples of b doping, and the fabrication of ga - diffusion transistor, b - diffusion and the transistor formed by b diffusion following ga diffusion are detailed therein, and the as - prepared samples are analyzed by sims, srp and four point probe

    首先介紹了制備各種樣品所用的實驗儀器、設備與方法；第二節中介紹了實驗系統，包括氧化系統、擴散系統，第三節介紹了樣品的制備，包括ga的預沉積、再分佈、二次氧化樣品，擴硼樣品，以及擴嫁晶體管、擴硼晶體管和擴鐮后再補充擴硼晶體管的制備流程；實驗所得樣品，藉助二次離子質譜（ sims ） 、擴展電阻（ srp ） 、四探針薄層電阻等先進的測試分析方法進行分析。
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