斷面積因子 的英文怎麼說

中文拼音 [duànmiànjīyīnzi]
斷面積因子 英文
baf
  • 斷 : Ⅰ動詞1 （分成段） break; snap 2 （斷絕;隔斷） break off; cut off; stop 3 （戒除） give up; abstai...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 因 : Ⅰ動詞[書面語] （沿襲） follow; carry on Ⅱ介詞1 [書面語] （憑借; 根據） on the basis of; in accord...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 面積 : [數學] area
  1. For electrodeposition by dc methods, the metals deposite uninterrupted and the particles were also embeded uninterrupted into the coatings ; for electrodeposition by pc method, the particles with biggish volume were desorbed from the coatings and returned to the electrolyte again owing to the presence of pulse interval ; for electrodeposition by prc method, the particles carried positive charges are much more easy to desorb from the coatings owing to the effecf of reverse pulse current combined with pulse interval, in addition, the reverse pulse current also could dissovle the metals, further accelerates the desorption of particles, thus the particles size embeded in the coatings by prc method is the least

    直流電沉積時，基質金屬的沉積連續進行，粒子在電極表面不間斷嵌入鍍層;單脈沖電沉積由於脈沖間歇的存在使得具有較大體積的粒子會脫附，重新回到溶液中;採用周期換向脈沖時，反向脈沖電流使表面荷正電的較大的粒子更易從電極表面脫附，同時，反向脈沖電流對基質金屬的溶解作用，也會促進粒子的脫附，因此鍍層中復合粒子尺寸最小。隨著鍍層中粒子復合量的增加，三種鍍層的晶粒都明顯細化，說明al _ 2o _ 3的存在阻止了晶粒的長大，提高了電沉積過程中晶核的形成速率。
  2. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  3. 2. the feature of geochemical primary halo in longshujiao ore segment shows that there is a positive abnormality of fi set of main chemical elements at 96 ~ 100 investigating line, longshujiao fault and fault 11 - 29, a east - north a positive abnormality of fs set of main chemical elements around 98 investigating line, big area positive abnormality of f4 set of main chemical elements in east ore segment and the feature of this abnormality is like the shape of the main ore - body in the west

    2 、龍樹腳礦段構造原生暈特徵分析顯示， f _ 1主元素因子組在96 100勘探線，龍樹腳斷裂至? 29號斷裂間出現一個因子得分高值異常； f _ 5因子組以98勘探線為中點，因子得分值形成一個北東向高值異常； f _ 4因子組元素因子得分在東礦段形成大面積異常區，異常特徵與西部主礦體地表展布相似。
  4. At the same time, bem formulae for interface crack analysis of thermal barrier coated structures are given in this paper. the method to evaluate nearly - singular integrals over crack tip elements and the formulae for calculating stress intensity factors ( sif ) using open and slip displacements on crack faces are presented too

    基於邊界元法、斷裂力學等基本理論，本文導出了帶熱障塗層構件界面裂紋的斷裂特性分析邊界元法公式；結合先進的近奇異積分技術處理裂尖元的近奇異積分，利用位移法計算層間界面裂紋的應力強度因子。
分享友人
分享到 Line

分享到臉書