普通熱處理 的英文怎麼說

中文拼音 [pǔtōngrèchǔlǐ]
普通熱處理 英文
conventional heat treatment
  • 普 : Ⅰ形容詞（普遍; 全面） general; universal Ⅱ名詞（姓氏） a surname
  • 通 : 通量詞（用於動作）
  • 處 : 處名詞1 （地方） place 2 （方面; 某一點） part; point 3 （機關或機關里一個部門） department; offi...
  • 理 : Ⅰ名詞1 （物質組織的條紋） texture; grain （in wood skin etc ） 2 （道理;事理） reason; logic; tru...
  • 普通 : common; general; ordinary; plain; honest; private; trile; average
  • 熱處理 : [冶金學] heat treatment; heat treating熱處理保護塗料 heat treatment protective coating; 熱處理車...
  1. The structures and characteristics of several graphite samples are measured by means of powder x - ray diffraction ( xrd ), brunauer - emmer - teller ( bet ) surface area measurement, inductively coupled plasma ( icp ) spectroscopy, particle size analysis and electrochemical measurements. the effects of origin, structure, impurity, particle size, specific surface area of carbon materials on the electrochemical characteristics are studied. a synthetic graphite with abundant resources, low cost and favorable performance is determined as the raw material for modification of graphite

    採用xrd 、 bet 、 icp 、激光粒徑分析及電化學性能測試等方法，對國內外多種典型石墨樣品的結構與性能進行比較，研究石墨材料的來源、晶體結構、雜質含量、顆粒大小、比表面積等因素對其充放電性能的影響，確定一種性能較好、價格低廉、來源廣泛的普通人造石墨粉作為熱處理與摻雜改性、以及復合結構炭材料研究的原材料。
  2. Carbon channel is usually finished with electro - galvanization. hot dipped galvanzined finish or epoxy coating or nigrescence is also available on special order

    碳鋼型鋼的表面處理普通為電鍍，如需熱浸鍍鋅、噴塑、發黑等要在訂貨時說明。
  3. Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation

    結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。
  4. The company has set up common casting workshop, special casting workshop, heat treatment workshop, rough castings cleaning workshop, and machining workshop. the company commands nearly 100 units of equipment

    企業建有普通鑄造車間特種鑄造車間熱處理車間鑄件清理車間機械加工車間，擁有各種設備近百臺。
  5. Product description : this series product has entire auto - lubrication systems and the ordinary two big kinds supplies to select, this machine major parts cancels the needle, cam and the ball bearing all uses the high quality import components, also selects the high quality steel products quenching heat treatment to the main stress components, the essential components uses special phosphorus processing, the foreign dew components all adopts special - purpose seal - up device and drains the oil the measure, therefore, entire causes machine throughout to locate the lubrication is reliable, the revolution is steady, under the high speed low chirp condition works

    本系列產品具有全自動潤滑型及普通型兩大類以供選用，本機主要零件勾針，凸輪及滾珠均採用優質進口零件，對主要受力零件亦選用優質鋼材淬火熱處理，關鍵零件則採用專門磷化處理，對外露零件均採取專用密封裝置及排油措施，因此，使整機始終處于潤滑可靠，運轉平穩，高速低噪的條件下工作。
  6. This paper analyzes and compares the ordinary heat treatment technology of q275 steel knuckle pivot pin with the quenching and backfiring technology

    摘要分析、比較了q275鋼鉤尾銷普通熱處理工藝與鍛熱淬火回火工藝。
  7. Steel plate, sheet and strip - carbon and carbon - manganese plate, sheet and strip - specification for hot rolled narrow strip supplied in a range of conditions for heat treatment and general engineering purposes

    鋼板薄板材和帶材.第1部分:錳碳鋼板材薄板材和帶材.第14節:具有一定熱處理狀態普通工程用熱軋窄帶材規范
  8. Among the advantage that future biochips, or “ living computers ”, would have over conventional semiconductor chips are that they are smaller, they do not generate as much heat, and they allow for the parallel processing of information, making them faster than today ' s semiconductor devices

    與普通半導體晶元相比，未來的生物晶元或者「活計算機」具有的一些優點是：它們體積較小，產生的熱量少，並能并行處理信息，從而使其速度快于當今的半導體元件。
  9. In this experiment, thermal donor in cz silicon generated by 450 ? annealing for 32 hours was eliminated by rtf at range of 600 ~ 700 ? for different time. furthermore, the permit temperature and time for annihilation of thermal donor by rtf was found

    實驗中將450oc ， 32h處理生成熱施主的普通cz矽片在600oc 700oc范圍內進行不等時的rtp處理，觀察電阻率的變化，從而確定最佳的rtp消除熱施主溫度和時間。
  10. The tio2, cds and cds - tio2 films on the common glass substrate were prepared, respectively, using ti ( oc4h9 ) 4, cd ( cooch3 ) 2 and scn2h4 as raw materials by sol - gel method. the influences of manifold preparing parameters ( such as the concentration of sol, the amount of the peg. the number of coatings, the heat - treated temperature and time ) on the structure and performance were studied

    本文採用溶膠-凝膠技術，以鈦酸丁酯、乙酸鎘和硫脲為原料，以普通玻璃片為載體，制備了納米tio _ 2薄膜、 cds薄膜和cds - tio _ 2復合半導體薄膜，研究了制備過程中多種制備參數（如溶膠的濃度，聚乙二醇（ peg ）的加入量，鍍膜層數，熱處理溫度及時間）對薄膜結構和性能的影響，採用x -射線衍射（ xrd ） 、掃描電鏡（ sem ） 、能譜分析（ edxa ） 、紫外-可見吸收光譜（ uv - vis ）等測試手段對各薄膜進行了結構和物性表徵。
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