晶格基底 的英文怎麼說

中文拼音 [jīnggéjīde]
晶格基底 英文
crystal lattice base
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 格 : 格象聲詞rattle; gurgle
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  1. Several important tectonic events took place in the chinese continent during the early paleozoic, such as the amalgamation of xiyu plate, forming a unified crystalline basement with the cathaysian plate, development of widespread intraplate deformations in southern yangtze plate, and the occurrence of altay - ergun collision zone

    它們與蘇格蘭阿帕拉契亞的加里東事件完全不同，在中國大陸出現了西域板塊完成拼合，華夏板塊構成統結晶基底，南揚子板塊廣泛發育板內褶皺，此時還形成了阿爾泰額爾古納碰撞帶等重要構造事件，而以中朝和北揚子板塊為代表的其他板塊則主要表現為穩定沉積，地塊運移，並呈離散狀態。
  2. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  3. As well, the compress stress existed in ( 002 ) crystal plane are found and can be explained by the matching between film material and substrate material as well as the different thermal expand coefficient between them

    同時， zno薄膜（ 002 ）方向上存在著內應力，內應力是由膜材料與基底材料之間的晶格失配和不同熱擴散系數造成的，退火可可使內應力的到不同程度的釋放。
  4. As is known to all, one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate. generally, the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process. also, in order not to increase the thermal noise of device, the base is always heavily doped

    眾所周知， sigehbt的主要特點之一就是在si材料襯底上生長的sige材料是應變的，為了在後續的高溫退火工藝中不發生晶格馳豫現象，通常要求器件的基區要做的很薄，同時為了不增加器件的熱噪音，通常sigehbt基區都是高摻雜的。
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