晶格極化 的英文怎麼說
中文拼音 [jīnggéjíhuà]
晶格極化
英文
lattice polarization-
The temperature dependences on the resistance in all the thin films show that in the low temperature range the width of eg band level changes the transports, but in the high temperature range the thin films forms the small polarons hopping conductivity. the phase transition induced by the current is explained by the demagnetization and lattice distortion
在高溫部分，材料呈現小極化子跳躍形式輸運特徵；實驗研究了不同偏置電流對薄膜的相變影響，表明電場可以引起材料中磁性的變化和晶格畸變，導致相變溫度點向低溫方向移動；材料的光致相變研究表明光子能量、光強和極化方向對輸運性質有影響。The main origin of the perpendicular magnetic anisotropy in tbco amorphous films is the static interaction between the aspheric distribution charges of non - s tb ions and the aberrant crystal field produced in sputtering and deposition process. the magnetic dipole interaction is in a secondary cause
對于tbco非晶垂直磁化膜而言，具有非球對稱電荷分佈的非s態離子tb與濺射沉積薄膜過程中產生的畸變晶格場之間的靜電相互作用構成了tbco非晶薄膜垂直磁各向異性的主要部分， tbco薄膜內的磁偶極相互作用構成了其次要部分。Srtio _ 3 ( sto ) thin films exhibit a large electric field dependence of dielectric permittivity. the microwave surface resistance of yba2cu3o7 - x ( ybco ) is much lower than that of the normal conductor. the typical value of rs for ybco epitaxial thin film is smaller than 1 m
在低溫下， srtio _ 3 （簡寫為sto ）薄膜具有強烈的非線性介電性質，即:介電常數隨外加直流電場變化而變化; yba2cu3o7 - x （簡寫為ybco ）具有極低的微波表面電阻， rs （ 10ghz ， 77k ） < 1m ，而且它們的晶體結構相似，晶格常數匹配以及化學性質相容。The photo - induced phase transition of the different light intensities, photo - energies and directions of the polarized light is investigated. it suggested that the photo excites the down spin eg electrons and destroys the spin order system of the thin films. the relation between the he - ne laser reflectivity of the thin film, applied current and resistance was analyzed by the optics theory of solid state physics
光子通過激發e _ g向下電子的躍遷，從而改變材料自旋極化方向，影響體系的輸運行為；首次研究了cmr薄膜的激光反射率和偏置電流的關系，並用固體光學理論對其定性分析，表明反射率的變化是由於電場引起材料的晶格畸變，改變了極化率，從而導致材料的折射率和反射率發生改變。At same time. osl ( optical supperlattice ) does n ' t change the optic property of crytal. and only modulate the direction of the tensor d33 periodically
同時，光學超晶格不改變晶體的光學性質，僅是對晶體的極化率進行周期調制，它擴大了現有晶體的應用范圍。The compamy has a provincial - level research and development center of carburetor technolny. engineers and technicians account for more than 30 % of its total staff. based on its original advanced management system and technlilgical process in production, the enterprise has actively introduced the foreigm leading techmology and equipment for processing and examining. a large amount of investment has been put in this field. “ unrival quality, unbitable price, unrecerved service ” is the fruit from the optimized combination in the joint venture company
公司擁有省級化油器技術研發中心，工程技術人員佔30 %以上，在原有先進的管理和產品製作工藝基礎上，企業積極引進國外領先的技術和加工、檢測設備，並在此領域中進行了大量的投入， 「品牌優勢、價格優惠、服務優質」是合資公司優化組合成功的結晶。There is 148mah / g theory capacity in spinel limn2o4, which has lots of advantages, such as synthesize method is simple, the price is low, and is friendly to environment. the spinel limn2o4 is perfect substitution of li - ion batteries cathode. but now it has not been commercialized because its capacity fades during the cycle of charge - discharge
Limn2o4具有尖晶石結構，其理論放電容量達148mah / g ，由於制備工藝簡單、價格低廉、對環境友好等，是一種很有應用前景的鋰離子電池正極材料;尖晶石limn2o4正極材料在充放電循環過程中由於錳元素的溶解、晶格發生jahn - teller變形和電解液的氧化分解，使得容量衰減較快，至今未能商業化。Zinc acts as negative material of zinc manganese dioxide batteries, with the advantages of low cost, little poison and easy treatment. in another way, as the material of batteries, zinc electrode has many problems, such as dendrite growth, shape - changing, passivation, corrosion and so on. at present, the main way to solve these problems is to add mercury and its oxide to zinc electrode
鋅錳電池採用鋅粉作為電池的負極材料，鋅資源豐富、價格低廉、毒性小、易處理，但是鋅作為電極材料使用存在枝晶、形變、鈍化和腐蝕等問題，目前，解決這些問題的主要方法是加入汞及其氧化物。Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo, tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo. as we know, band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices
利用mg _ xzn _ （ 1 - x ） o薄膜，可以在保持zno六方纖鋅礦（ wurtzite ）結構的同時有效調節調節薄膜的禁帶寬度，制備出基於氧化鋅的量子阱、超晶格及相關的光電器件，如基於氧化鋅的紫外光探測器、紫外發光二極體和紫外激光二極體等光電子器件。According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon
Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。But in the moderate electric field 150 kv / cm, there is a sharp change in the configuration and charge distribution of the exciton, i. e. the exciton is directly split into an electron polaron and a hole polaron. the polarization and dissociation happen at a same time, which differs from that in conjugated polymers. and in the strong electric field 350 kv / cm, appear structural phase transition of the chain and luminescence quenching
同時得到兩個重要的臨界電場值： 1激子解離電場ec1 （ 150kv / cm ） ，在此電場下激子發生瞬間解離，成為電子型極化子和空穴型極化子； 2結構相變電場ec2 （ 350kv / cm ） ，在ec2下二聚化晶格開始被等距晶格取代， ptcl絡合物鏈發生結構相變，並伴隨peierls能隙漸趨消失和發光猝滅的現象出現。Based on the given linear holstein model, and using the variational method we obtained the ground state properties of the electron - phonon interaction system with cubic and quartic lattice ( phonon ) terms. we obtained the relations between the ground state energy and the phonon squeezing effect and polaron squeezing effect as well as the variation of the polaron bandwidth
在線性holstein模型的基礎上，採用變分法得出了含晶格（聲子）三次方和四次方勢下系統基態特性，得到了基態能量與聲子壓縮效應和極化子壓縮效應的關系，並求得了極化子能帶寬度的變化規律。分享友人