晶格的替位 的英文怎麼說

中文拼音 [jīnggédetìwèi]
晶格的替位 英文
lattice substitution
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 格 : 格象聲詞rattle; gurgle
  • 的 : 4次方是 The fourth power of 2 is direction
  • 替 : Ⅰ動詞1 （代替） replace; substitute for; supply [take] the place of 2 [書面語] （衰敗） decline Ⅱ...
  • 位 : Ⅰ名詞1 （所在或所佔的地方） place; location 2 （職位; 地位） position; post; status 3 （特指皇帝...
  1. Some impurities are entirely substitutional or interstitial in behavior, but others can exist in either lattice position.

    有些雜質是單純的替代位或單純的間隙位雜質，但也有的可以在任一晶格位置存在。
  2. The difference between the magnetic moments for the samples with respective doping level can be ascribed to the variation of the competition between thermal effect and the magnetic coupling. based on the spin orientation rotation of dy sublattice as well as the antiferomagnetic coupling between dy sublattice and mn sublattice, we successfully elucidate the changes of magnetic structure in perovskite compounds s. electron spin resonance ( esr ) study on perovskite compounds on the basis of chapter 4, we give further study on micromagneticism of dy - doping perovskite compounds la0. 67 - xdyxsr0. 33mno3

    其中第一節簡單回顧了早期對a位雙稀土元素元素摻雜鈣鈦礦化合物的研究，早期研究較多的是替代元素的離子半徑變化上，由於替代離子半徑的改變，使a位平均半徑變ylll化，致使公差因子改變，使mn o長、鍵角變化，晶格效應的作用使化合物的磁性、電性、 cmr效應發生改變。
  3. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  4. There have been some effects to replace the bst thin film with new films such as ba ( zrti ) o3 ( bzt ). in case of bzt, it is obtained by substituting ions at the b site of the batio3 with zr in compounds of the perovskite structure abo3

    Ba （ zrti ） o3 （ bzt ）是對batio3 （ abo3 ）鈣鈦礦結構進行b位替代，在bzt薄膜中，由於zr4 +離子比ti4 +離子化學穩定性更好，具有更大的離子半徑;引入之後，能夠使其鈣鈦礦晶格變大。
  5. We also have analyzed the photoluminescence ( pl ) spectra of some zno films, it turns out that the emission of ultraviolet light comes from the radiative recombination of excitons within nano - crystal energy band - gap, and the pl peaks move to smaller wavelength because zn are substituted by fe, co, and cu, which cause the size of the film grains smaller and the effective band - gap bigger. the red emission of zno films is due to, on the one hand, decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly, on the other hand, the transition of electrons from deep donor level of the oxygen vacancies to the valence band

    另外，我們還對薄膜光致發光性質進行了分析和研究，結果表明：納米結構zno薄膜的紫外發光來源於帶間激子的輻射復合發光， pl譜的帶邊發射峰發生藍移是由於fe 、 co 、 cu對zn的替代使薄膜粒子的尺寸減小，使薄膜的有效帶隙增寬； zno薄膜的紅色發光，一方面是zno顆粒尺寸的減少，帶間的激子發射峰越來越弱直至猝滅，另一方面主要是與zno晶格中的o空位有關，由深能級復合發光引起紅光發射。
  6. The quasi - chemical equilibrium for cdte and znte were inspected independently while the influences of the integration crystal lattice were taken into consideration by the united concentration of vacancies, anti - sites, and the cation interstitials

    將（ cd ， zn ） te視為替代型晶格點陣，獨立地考察其中cdte和znte的偽化學平衡。同時，通過統一的空位、反位原子及陰離子間隙原子濃度來反映整體晶格環境的影響。
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