晶片電阻率 的英文怎麼說

中文拼音 [jīngpiāndiànzǔlǜ]
晶片電阻率 英文
slice resistivity
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 片 : 片構詞成分。
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 晶片 : chip; crystal plate; wafer
  • 電阻 : （物質阻礙電流通過的性質） resistance; electric resistance （電路中兩點間在一定壓力下決定電流強度...
  1. Standard slice of single crystal silicon resistivity

    硅單晶電阻率標準樣片
  2. Testing method of resistivity for silicon crystals and silicon wafers with four - point probe

    用四點探針法對硅晶體和矽片電阻率的測試方法
  3. As the isotropic etching being related to the resistivity of the si material and combining the practical need of the solar cell production, the paper emphasis on the etching of the multicrystal si with resistivity of about 1. cm. the results : ( 1 ) reflectance characteristics the appropriate etching solutions has led to a reduction of the total integrated reflectance to 5. 7 %, which is quite comparable with conventionally pretextured si surface covered by a double layer arc

    由於以hf + hno _ 3 + h _ 2o為溶液各向同性腐蝕與矽片的摻雜濃度有關，結合生產太陽電池的實際需要，本文重點研究了電阻率1 . cm左右的多晶硅的腐蝕情況，結果如下： （ 1 ）反射特性在適當的hf + hno _ 3 + h _ 2o溶液中制備的多晶硅電池的絨面，其反射率降到了5 . 7 。
  4. So in one hand it requires the wafer ' s diameter to be more large in order to enhance the productivity, and on the other hand it puts forward more strict requirement about the crystal perfection and electricity character. especially the electronic character and the equality of micro - area in the crystal wafer has become the key factor to determine whether the device can be made on it or not. so the resistivity measurement of micro - area become one most important procedure in the chip machining. to ensure the produce quality of chip and the perfect performance of final production, the four - probe testing technology need to be deeply studied

    圖形日益微細化，電路尺寸不斷縮小，目前ic製造以8英寸、 0 . 13 m為主，預計在2007年左右將以12英寸、 65nm為主，這一方面要求圓片直徑不斷增大以提高生產率，另一方面對晶體的完美性、機械及電特性也提出了更為嚴格的要求。特別是微區的電學特性及其均勻性已經成為決定將來器件性能優劣的關鍵因素。因此，微區電阻率的測試成為晶元加工之中的重要工序。
  5. Four - point probe measurement technique is one of the most extensive means for examining the resistivity in the semiconductor industry. with continuous progress, semiconductor industry develops at a very fast speed, the integration level of ic becomes higher and higher. presently, the ic production is entering into the age of ulsi, then testings are more and more important

    四探針測試技術是半導體工業檢測電阻率時採用最為廣泛的測試手段之一。隨著時代的不斷進步，半導體產業飛速發展，以單晶矽片為襯底的集成電路集成度越來越高，目前正進入甚大規模集成電路（ ulsi ）時代，測試在整個集成電路生產過程中的地位越來越重要。
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