晶界結構 的英文怎麼說

中文拼音 [jīngjièjiēgòu]
晶界結構 英文
structure of crystal boundaries
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 界 : 名詞1 （相交的地方; 劃分的界限） boundary 2 （一定的范圍） scope; extent 3 （按職業、工作或性別等...
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 構 : Ⅰ動詞1 （構造; 組合） construct; form; compose 2 （結成） fabricate; make up 3 （建造; 架屋） bui...
  • 結構 : 1 （各組成部分的搭配形式） structure; composition; construction; formation; constitution; fabric;...
  1. But the grain growth, grain semiconduction and grain boundary insulation were influenced by many factors, such as the type and contents of dopants, sintering temperature and so on. therefore, in this thesis the effect of the restore sintering temperature, the oxygenize temperature, the donor and acceptor dopant on the dielectric and varistor properties of devices were studied. with sem, the microstructure of srtio3 - based double function ceramic was analyzed

    而晶粒生長、晶粒半導化和晶界絕緣化受到多種因素的影響，諸如雜質的種類和含量、燒成溫度等，因此本論文研究了還原燒成溫度、中溫氧化溫度、施主和受主摻雜等對srtio _ 3基陶瓷的壓敏和介電性能的影響，並藉助于sem分析對srtio _ 3基雙功能陶瓷的微觀結構進行了分析。
  2. When increasing the oxygen pressure, the rheed pattern changes to streaky one again. this rheed pattern transformation induced by the oxygen pressure is reversible. ex situ xps results indicate that the element ni of lno film deposited in the relatively low oxygen pressure with thickness below the critical value exists in the form as ni2 +, while as ni3 + in the relatively high oxygen pressure

    隨著膜厚增加而超過約30nm的臨界厚度時，越來越多的晶格氧會移動到了薄膜表面，此時所提供的氧將使得后續生長的lno膜層重新形成鈣鈦礦結構，並以層狀方式外延生長。
  3. Analysis of microstructures of laalo3 batio3 superlattice

    3超晶格薄膜界面結構分析
  4. The most achievement is that we firstly obtain the analytic accurate solution of the modal fields of the waveguide structure and find some available character : ( 1 ) the different uniaxial crystal materials have the different propagation properties ; ( 2 ) when the optical axis of the crystal is on the plane that is made up of the normal direction of the waveguide plane and the propagation, there are te mode and tm mode in this special waveguide, but the principal mode is different of the character of the uniaxial crystal, the principal mode is the principal mode of te mode for the negative uniaxial crystal, but the one of tm mode for the positive uniaxial crystal ; ( 3 ) when the crystal optical - axis parallel to the waveguide plane, for the positive uniaxial crystal material, the principal mode of the waveguide is a te wave, which can be excited by the light at any frequency ; when the light frequency satisfies a single mode propagation condition, there will be only the principal mode propagating in the waveguide, otherwise some of the higher order modes can be excited, which are neither te modes, nor tm modes, but the hybrid guided modes

    本文就是在此背景下，利用金屬波導和單軸晶體的一些特性，結合麥克斯韋方程組和波導的邊界條件，從三種不同的情況研究了光在對稱平面單軸晶體金屬波導（波導層是單軸晶體，兩個波導界面均為金屬）內的傳輸特性，其主要貢獻為，首次解析地得到了這種波導結構下模式場的精確解，並發現了一些有用的特性： （ 1 ）模式場的性質因單軸晶體的性質不同而異； （ 2 ）當單軸晶體光軸位於波導界面法方向與傳輸方向構成的平面內時，波導中傳輸te波和tm波，只不過其主模因單軸晶體的性質不同而異，當波導層介質為負單軸晶體時，波導主模是te波主模，而波導層介質為正單軸晶體時波導主模是tm波主模。 （ 3 ）當單軸晶體光軸位於波導面內時，對于正單軸晶體，波導的主模是橫電波te _ 0模，任何頻率的光波均可激勵該模式；當光波波長滿足一定條件時，波導內傳輸單模，否則，將激勵起高階模式，高階模即匪te波，也匪tm波，而是兩者耦合而成的混合模。
  5. In this paper, we combine the standard modules realize the boundary scan of estarl and also expand it to the test of internal circuit. this structure can save the i / o port of the chip and simplify the testing program

    本文結合標準模塊設計實現了estar1的邊界掃描結構，並進行了擴展，應用到晶元內部測試，節約了測試i / o口消耗，簡化了測試過程。
  6. In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers

    本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。
  7. All main ways of metal strengthening including grain refining strengthening, dislocation strengthening, grain boundary and substructure strengthening, second phase strengthening, solid solution strengthening, as well as trip strengthening and so on, have totally found expression in the adi

    金屬強化的幾種主要方式：細晶強化，位錯強化，晶界與亞結構強化，第二相強化，固溶強化，細晶強化以及trip強化等都在等溫淬火球鐵中得到了體現。
  8. A patch antenna with etched holes on the ground plane is also studied. the performance of the antenna at the resonant frequency is analyzed by using the fdtd method together with the pml boundary treatment. the results show that the surface waves are suppressed greatly, the bandwidth is improved and a 1 odb reduction on the sidelobe level is achieved at the 110 and 260 directions in the e plane

    全面地研究了地面腐蝕周期圓孔結構的電磁晶體貼片天線在基波頻率處的性能，用fdtd方法並結合pml邊界處理技術對該天線所取得的研究結果顯示，本文設計的地面腐蝕型電磁晶體結構抑制了貼片天線中的表面波，增加了天線的帶寬，並有效地削弱了旁瓣，使天線的e面方向圖上110和260方向的兩個旁瓣被削弱了10db 。
  9. In chapter 5 we discuss the design of ieee754 standard fpu ( floating point unit ). processor and uart ( universal asynchronous receiver transmitter ), these cores are used in this dissertation, fpu is used for floating point complex fft processor, uart is used for fft processor " s peripheral and our test platform. in chapter 6 we discuss the design for testability, including atpg, bist and jtag method, discuss the different verification and simulation strategy in soc scale facing to different modules, build up the test platform which is used to test high performance application specified digital signal processing processor. in chapter 7 we summarize the research results and creative points, and point out the further work need to do in the future

    第五章提出了基於ieee754浮點標準的浮點運算處理器的設計和異步串列通信核的設一浙江大學博士學位論文計，提出了適合硬體實現的浮點乘除法、加減運算的結構，浮點運算處理器主要用於高速fft浮點處理功能，異步串列通信核主要用於pft處理器ip核的外圍擴展模塊以及本文所做的驗證測試平臺中的數據介面部分第六章提出了面向系統級晶元的可測試性設計包括了基於掃描測試atpg 、內建自測試bist 、邊界掃描測試jtag設計，在討論可測試性設計策略選擇的問題上，提出了針對不同模塊進行的分別測試策略，提出了層次化jtag測試方法和掃描總線法，提出了基於fpga
  10. In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators

    本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。
  11. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  12. The results showed that the in - situ formed tibi particles which had a size of about 50nm, exhibited a homogenous dispersion in the copper matrix. moreover, the interface between the nanoscale particles and the copper matrix was clean, and there was no certain location relationship. due to their reinforcement, the tensile strength and hardness of the in - situ cu - tib _ 2 nanocomposite significantly improved

    通過光學顯微鏡、 tem 、 xrd等對cu - tib2原位復合材料進行了金相組織、微結構分析，原位復合材料的鑄態金相組織中彌散分佈著團簇狀的tib2顆粒；形變態金相組織中tib2顆粒呈纖維狀排列； tem觀察表明：在基體內存在著尺寸約為50nm 、彌散分佈的tib2顆粒，且tib2顆粒與基體之間界面清晰，但由於tib2結構與銅晶體結構的差別較大， tib2顆粒與基體之間無固定的位向關系；納米tib對銅基體有良好的增強作用。
  13. In this paper, pmnt, pznt single crystals in the vicinity of the morphotropic phase boundary were obtained by high - temperature solution technique. the growth, structure and phase stability of single crystals were studied. the results are shown as follows : 1

    本論文採用高溫熔液法技術，對用高溫熔液法生長弛豫鐵電單晶材料工藝進行了研究，成功地制備出準同型相界附近的pmnt 、 pznt單晶材料，分析了晶體形成、晶體結構及其相結構穩定性，並對生長機理作了初步探索，主要研究結論如下： 1
  14. Computational simulation in nano size alloy system chapters, we applied an approach to the development of many - body interatomic potentials for niti, nizr alloys, the database used for the development of a potential includes both experimental data and a large set of energies of different structures of the material generated by dft calculations. the molecular dynamic simulation results prove the structure change in nano materials grain size

    納米合金體系的計算模擬通過用dft詳細地對niti二元合金簇的研究導出其原子間相互作用並加以模擬研究納米晶界結構與穩定性，結果表明dft導出的相互作用函數更適合研究納米材料晶界或非晶納米合金行為，而用經驗勢能函數的模擬納米合金相變有很好的模擬結果。
  15. Piezoelectric properties were detected, it is suggested that the optimum poling condition is maintaining 15 minutes under 4kv / mm, poling temperature is 70 xrd results indicate that the fabric transited from rhombohedral to tetragonal gradually with the substitution of the ba2 +. morphotropic phase boundaries ( mpb ) of the ceramic exist in the composition range of x = 0. 06 ~ 0. 10

    Xrd分析表明，隨著ba ~ （ 2 + ）取代量的增加，樣品晶體結構逐漸由三方相向四方相轉變，在x = 0 . 06 0 . 10組成范圍內存在三方、四方相共存的準同型相界。
  16. For the effects of dimension and surface, the lattice structure, chemical states and the electronic states in the film surface ( interface ) have greatly affected the properties of the films and the practical applies in industries

    由於納米材料的小尺寸效應及表面效應，薄膜表（界）面的晶格結構、化學形態和電子態成為決定薄膜性能的重要因素，而這些因素又直接影響著鈦酸鋇系薄膜的實際應用。
  17. The technical breakthroughs in growth of nd : cngg had been made. in particular, continuous laser operation was achieved from nd : cngg pumped by ld. when the crystal wafer was end - pumped by one bar of ld with 807nm wavelength, the cw laser output power of 123. 1 mw was obtained with slope efficiency of 22. 3 %

    本論文用自動化熔體提拉技術成功生長出< 111 >方向的直徑25mm以上，長度80mm以上的平界面無核心nd : cngg單晶，確定了晶體結構和物相，測量了晶體的光譜性能，晶體消光比達到34db ，晶體生長技術有新的突破，實現了連續激光運轉，用單支807nm半導體激光二極體端面泵浦該晶體片子，在國內首次獲得123 . 1mw的1 . 062 m連續激光輸出，斜效率達22 . 3 % 。
  18. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  19. When the boundary is square, we can find polycrystalline textures with irregular grain boundaries and linear shear fractures. but we also observe the same phenomena when the boundary is circle

    考慮了邊界為正方形和圓形兩種不同情況，我們發現都存在多晶結構，因此，我們推斷packing現象中出現的多晶體結構跟系統邊界無關。
  20. As a result 4 the rising annealing temperature induces si02 phase to form, also ivolves the formation of a si phase. in high - temperature - annealed sio ~, films the excess silicon atoms are present as si - si4 tetrahedra, randomly dispersed in the amorphous si02 matrix. photoluminescent spectra were observed for the samples excided by the laser whose wavelength is 365nm. the pl peak is located at about 445nm, which dose n ' t shift as the annealing temperature changes. as the annealing temperature is raised, the luminescent intensity increases. the phenomena suggest that the si - o - si bond as a defect center which is broken down by the stress at the si nc / si02 interface is the primary source of blue luminescence

    這個陡的界面由於明顯的晶格結構的差別而有較大的應力。界面的形成伴隨著界面發光中心的增加，同時pl強度在l戶800有一個大的增強。這個結果提示我們，界面上h 0 s工鍵斷裂形成的nbohc應是藍光發射的主要原因。
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