晶粒變粗 的英文怎麼說
中文拼音 [jīnglìbiàncū]
晶粒變粗
英文
grain coarsening-
The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of
對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。The process parameters of preparing nanosized titanium dioxide powders were systematically studied by electrochemical synthesis experiments at room temperature. the rutile phase and anatase phase powders were obtained in the sizes of 9. 7nm and 9. 2nm respectively, and the complete crystal powders were formed after calcined at 400 for two hours. in the process of experiments it was observed that the low current density resulted in rutile phase powders, while the addition of little amount of ions of sulfate promoted the formation of anatase phase powders
在本實驗條件下，小的電流密度有利於金紅石相的生成，而少量硫酸根離子的引入對生成銳鈦礦相粉體有利，調整電流密度大小和引入硫酸根離子的量，可以得金紅石型和銳鈦礦型的混合混體；研究無定型粉體，銳鈦礦相粉體以及金紅石型粉體隨溫度的粒徑變化情況時發現，粉體在400以前晶粒長大相對緩慢， 400以後晶粒粗化現象嚴重。The results are as follows : ( 1 ) bst thin film prepared by pulsed laser deposition is well crystallized. the average grain size is 100nm and the surface roughness is about 10nm. when the electric field intensity is 3v /, the tunability of the thin film is about 30 % and the loss tangent is about 20 % under room temperature
研究結果如下： （ 1 ）採用脈沖激光沉積法制備的bst薄膜結晶良好，晶粒尺寸在100左右；表面粗糙度約為10 ；室溫下，當直流電場為3v /時介電系數變化率約為30 % ，介質損耗約為20 % 。3. simpler microstructure and mechanical properties classification criterions have been established. if f1 3. 8, the grains must be large grains ; if 0 f1 < 3. 8, the grains must be medium grains ; if f1 < 0, the grains must be fine grains
由新的表徵變量建立了更簡單明確的顯微結構和力學性能分類準則：當f _ 1 3 . 8 ，則為粗大晶粒組織；當0 f _ 1 3 . 8 ，則為中等晶粒組織；當f _ 1 0 ，則為細晶粒組織。The surface of ce02 - ti02 films were very smooth and difficulty to crystallization. the ceo2 - tio2 complex films were nanocrystalline microstructure or microcrystalline even if to heat the substrates or to anneal the films. the ceo2 and tio2 nanocrystalline were not easy congregate and bigger because of heterogeneity interface disturb and have many defect
組成ceo _ 2 - tio _ 2混合薄膜顆粒粒徑在納米尺度范圍3 ? 50nm ，與純ceo _ 2 、 tio _ 2薄膜相比，具有更小的表面粗糙度和更難結晶，這是由於異質材料晶界的相互干擾，使同質顆粒之間難于聚集而結晶長大，薄膜處于納米晶或雛晶態，即使加熱基片或薄膜進行熱處理也無明顯變化。( 2 ) with the condition of table 4. 2, the average reflectance decreases and the low reflectance vale moves towards shortwave, the influence on the extinction coefficient ( k ) of the films is very little, refractive index has trend of decrease and the thickness of the films decrease when increasing the total gas pressure, and the refractive index fix on a constant value when the total pressure exceeds a certain value. the phase of tio2 change from rutile to anatase and the size of surface grain change from big to small
（ 2 ）隨著總氣壓的增加薄膜的反射低谷向短波方向移動;總氣壓對消光系數k影響不大;隨著總氣壓的增加薄膜的折射率出現了下降的趨勢，但當總氣壓達到一定的量值時折射率的變化趨于穩定;薄膜的厚度隨總氣壓的增加而減少;隨著總氣壓的增加tio2的晶體結構由金紅石相向銳鈦礦相轉變，薄膜的表面的顆粒度大小由粗大變得微小細密。( 3 ) with the condition of table 4. 3, with increasing of temperature the average reflectance value decreases and the minimum reflectance point moves towards red direction. furthermore, temperature has little effect on the extinction coefficient ( k ). however, the refractive index value decreases remarkably when the temperature reaches about 240, but it does not change much when the temperature is below 180 and the thickness of the films increase when increasing the temperature
（ 3 ）隨著溫度的增加薄膜的平均反射率降低並且反射低谷向長波方向移動;溫度對消光系數k影響不大;當溫度低於180薄膜的折射率變化不大，當溫度達到240左右時薄膜的折射率明顯降低;薄膜的厚度隨溫度的增加而增加;隨著溫度的增加tio2的晶體結構由混晶變為單一的銳鈦礦相，薄膜的表面的顆粒由多變少，表面形貌由粗糙多孔變得細膩平滑。分享友人