晶膜過程 的英文怎麼說

中文拼音 [jīngmóguòchéng]
晶膜過程 英文
epitaxial process
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 過 : 過Ⅰ動詞[口語] （超越） go beyond the limit; undue; excessiveⅡ名詞（姓氏） a surname
  • 程 : 名詞1 （規章; 法式） rule; regulation 2 （進度; 程序） order; procedure 3 （路途; 一段路） journe...
  • 過程 : process; procedure; transversion; plication; course
  1. Applicable to lpressure measurements for liquid mediums at high temperature, such as corrosive, high viscous, crystallizable and solid - particles containing fluids commonly used in petrochemical indusery, etc

    隔膜壓力表用於化工等部門生產過程中測量具有腐蝕性、高粘度、易結晶、含有固體狀顆粒、溫度較高的液體介質的壓力。
  2. Moke and fmr studies were performed on single crystalline fe ultathin films epitaxially grown on iii - v semiconductor gaas substrate with thickness 4. 1 - 33 monolayer ( ml ). a theoretical mode for fitting fmr experimental data was established. the results demonstrated the structures and reproduced the evolution of the magnetic properties of ultrathin films with various thickness from the state of superparamagnetic nano - cluster through coexistence of two magnetic phases to continuous film, especially the change of magnetic crystalline anisotropy from unixial to cubic

    1 - 33原子層厚度（ monolayer ，簡稱ml ）的fe單晶超薄膜進行了鐵磁共振（ fmr ）和磁光研究，建立了理論模型對鐵磁共振實驗結果進行了模擬，重現了不同厚度的超薄膜，從納米團簇到兩相共存的過度階段直至連續薄膜結構與磁性的變化，特別是磁各向異性從單軸各向異性向立方各向異性轉變的演化過程。
  3. The chemical compositions of sei films formed on the interfaces of a3000 samples in different electrolytes during the first charging process are mainly li2co3 and lioco2r, but their textures are different. the sei films formed in ec - based electrolytes are thin and compact, which can prevent the solvated lithium ions from cointercalating between two graphene layers of the graphite crystallites effectively, therefore samples a3000 have small irreversible capacities and good compatibilities with this kinds of electrolytes. however, the sei films formed in pc - based electrolytes are thick but defective, which could not effectively prevent solvated lithium ions from intercalation, therefore sample a3000 shows large irreversible capacities in pc - based electrolytes and bad compatibilities with this kind of electrolytes

    A _ （ 3000 ）試樣在六種不同的電解液中，首次充電過程中所形成的sei膜，其化學組分均為碳酸鋰和烷基碳酸鋰，但在ec基電解液中形成的sei膜薄而緻密，可以有效地阻止溶劑化鋰離子插入石墨層間，不可逆容量少，表現出與a _ （ 3000 ）試樣有良好的相容性；在pc基電解液中形成的sei膜厚，且有缺陷，不能有效地阻止溶劑化鋰離子嵌入試樣中石墨微晶的層間，不可逆容量大，與a _ （ 3000 ）試樣的相容性極差。
  4. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  5. By compressing a monolayer film, the coexistence of liquid condensed ( lc ) and liquid expanded ( le ) phases can be reached. the transition from le to lc is usually regarded as a first - order one, so the theory of crystallization can be applied. in this article we review our recent studies on the growth of lc domains in the le - lc coexistence region driven by the illumination of a fluorescent microscope. the mechanism of this unusual 2d domain growth phenomenon is discussed. the formation of faceted, dendritic and fractal - like domains as well as the evolution and the transition of these patterns are investigated

    當處于氣液界面的類脂類化合物的單分子膜被壓縮時，隨著分子間距的縮小，單分子膜將經歷一系列相變過程.通過熒光顯微術可以觀測到新相的成核和生長過程.由於單分子膜的二維特性，該系統中的實驗觀測對于檢驗和發展二維界面生長理論尤為重要.本文總結了近年來本課題組與相關單位合作，在單分子膜系統中發現的實驗現象以及對其生長機制的系列研究.內容包括對單分子膜系統中的成核、界面穩定性、枝晶生長、形態演變等的觀測和分析
  6. Abstract : by compressing a monolayer film, the coexistence of liquid condensed ( lc ) and liquid expanded ( le ) phases can be reached. the transition from le to lc is usually regarded as a first - order one, so the theory of crystallization can be applied. in this article we review our recent studies on the growth of lc domains in the le - lc coexistence region driven by the illumination of a fluorescent microscope. the mechanism of this unusual 2d domain growth phenomenon is discussed. the formation of faceted, dendritic and fractal - like domains as well as the evolution and the transition of these patterns are investigated

    文摘:當處于氣液界面的類脂類化合物的單分子膜被壓縮時，隨著分子間距的縮小，單分子膜將經歷一系列相變過程.通過熒光顯微術可以觀測到新相的成核和生長過程.由於單分子膜的二維特性，該系統中的實驗觀測對于檢驗和發展二維界面生長理論尤為重要.本文總結了近年來本課題組與相關單位合作，在單分子膜系統中發現的實驗現象以及對其生長機制的系列研究.內容包括對單分子膜系統中的成核、界面穩定性、枝晶生長、形態演變等的觀測和分析
  7. The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth

    用納米壓入法對（ 100 ）單晶硅及（ 110 ）單晶硅、多晶硅薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準氮化硅薄膜、低應力氮化硅薄膜、氮化鋁薄膜、氧化鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入過程中觀測到的兩個力學相的變化。
  8. The main origin of the perpendicular magnetic anisotropy in tbco amorphous films is the static interaction between the aspheric distribution charges of non - s tb ions and the aberrant crystal field produced in sputtering and deposition process. the magnetic dipole interaction is in a secondary cause

    對于tbco非晶垂直磁化膜而言，具有非球對稱電荷分佈的非s態離子tb與濺射沉積薄膜過程中產生的畸變晶格場之間的靜電相互作用構成了tbco非晶薄膜垂直磁各向異性的主要部分， tbco薄膜內的磁偶極相互作用構成了其次要部分。
  9. The meltable liquid touches with the rotary drum of cooling that form material film in rotary drum appearance. the heat exchange between material film and drum wall makes material film cooling and crystallization. the crystal material film is cut by scraper which forms piece product

    轉鼓結片是一個冷卻結晶過程，料盤中熔融料液與冷卻的轉鼓接觸，在轉鼓表面形成料膜，通過料膜與鼓壁間的換熱，使料膜冷卻結晶，結晶的料膜被刮刀刮下，成為片狀產品。
  10. During depositing, the matrix temperature increases, the crystal grain grows and the grain size increases

    薄膜沉積過程中，基片溫度升高，晶粒生長，薄膜晶粒尺寸增大。
  11. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  12. Otherwise we also invest the effect of different parameters such as substrate temperature and o2 / ar ratio on zno film while growing, when the films fabricated at 600 and o2 : ar ratio equal to 1 : 2, the best quality films can be obtained

    在linbo3襯底上生長zno薄膜過程中，分析了襯底溫度和氧氣與氬氣含量對薄膜質量的影響。實驗表明在的襯底為600和o2 : ar為2 : 1時生長的zno薄膜擇優取向強，晶體性能好。
  13. The obtained qcm sensor has sensitive response to the liquid density and can be expected as a density meter. composite films of p - cyclodextrin ( p - cd ) bound to the titanium dioxide nanoparticles were tightly coated on the surface of qcm

    研究發現在乾燥失水的過程中，滴加到tio2多孔膜表面的-環糊精分子與納米二氧化鈦發生縮水反應，形成網狀物質，牢固地結合在壓電晶體表面。
  14. ( 3 ) according to the study of heat treatment process, heat treatment ambience, airflow and heat treatment temperature were considerd as the important influences on the quality and property of ybco films. through optimizing the process, the ybco films were prepared on sto single crystal, and their room temperature resistance was about 200 ybco films also were fabricated on the sto buffered si substrate, and their room temperature resistance was about 300d

    （ 3 ）根據本文熱處理過程的工藝探索，認為熱處理氣氛、氣流量及處理溫度是影響薄膜質量及性能的重要因素，通過優化工藝過程，在鈦酸鍶（ sto ）單晶上制得的ybco薄膜表面質量良好，室溫電阻200左右；而在預制了鈦酸鍶（ sto ）緩沖層的si基板上制備的ybco薄膜的室溫電阻為300左右。
  15. To make cds / k4nb6o17 powder on the base of the k4nb6o17 powder which by the courses of ion exchanging, amine intercalation, sulfuration etc. to obtain cds / k4nb6o17 thin film through the same course of making cds / k4nb6o17 powder on the base of k4nb3o17 thin film on the quartz which made by the spin coating and after heat treatment. to make experiments with additives ( na2so3, 0. 1mol / l ) of photocatalytically decomposing water into h2 and o2 to evaluate the photocatalytic activities of the catalyst knb6o17 powder, cds / k4nb6o17 powder, k4nb6o17 film, cds / k4nb6o17 film. the crystalline structures of the midst powder and film productions were investigated by using the x - ray diffraction ( xrd )

    本課題的主要內容是：高溫固相反應合成具有層狀結構的k _ 4nb _ 6o _ （ 17 ）晶體材料，然後以此為母體材料，通過離子交換、層間胺插入、硫化處理等過程制備出cds / h _ 4nb _ 6o _ （ 17 ）粉末形式的光催化材料；通過旋轉塗覆法在石英玻璃基片上制備了k _ 4nb _ 6o _ （ 17 ）薄膜，採用一定的熱處理制度后對薄膜分別進行離子交換、層間胺插入、硫化處理等處理過程制備了cds / h _ 4nb _ 6o _ （ 17 ）薄膜形式的光催化材料。
  16. Since the phase transformation behavior of tini thin film has a great influence on the properties of micro - actuator, both ti - rich and ni - rich tini thin films " phase transformation behavior were studied in this stud ) "

    本文從微驅動材料tini薄膜的相變行為對微驅動器性能影響出發，採用電阻法、 dsc 、 xrd 、 tem等手段，研究了tini非晶薄膜晶化過程、熱處理、熱循環以及預變形等對tini薄膜相變行為的影響。
  17. This part emphasizes the synthesis of nanoarrays, aiming at controlling the size and distance of nanocrystallites using calixarene derivatives by altering the size, length and chemical structure of the organic molecules ; 2. this part emphasizes in situ synthesis strategy for fabrication of polymer network of zns based nanopowder, aiming at size controls, coating and preventing agglomeration following " one - pot " synthesis ; this method fits to low cost, large scale production ; 3. according to development in zno nanomaterials, we first report on the synthesis, characterization of amorphous zno, aiming at describing the principles and approaches of synthesis techniques, optical properties, spatial structure and doped effect ; the amorphous zno displays cage - like structure, showing a strong ultraviolet emission while the visible emission is nearly fully quenched, a potential uv - emission material ; 4

    本論文以量子結構自組裝為出發點，提出利用杯芳烴及其衍生物的化學受限反應實現尺寸可調半導體納米粒子自組裝；提出有機聚合網路原位組裝zns基納米熒光粉方法，把熒光粉的納米化、包敷、防團聚在「一鍋」反應中完成，適于低成本，批量生產；根據當前zno的研究情況，我們首次合成了非晶zno ，研究了它的光學性質，確定了它的結構，並對其摻雜進行了初步的研究，非晶zno表現出強的深紫外發光特性，而可見發射非常弱，是一種有巨大潛在應用價值的深紫外發光材料；利用非晶zno的亞穩特性，對晶化過程中非晶zno納米晶zno三維受限量子結構特性，界面特性進行了深入的研究；利用固相熱分解一般受擴散控制特性，實現了尺寸可控的zno三維量子結構的自組裝；利用非晶zno的高度分散性，容易均勻成膜特性，實現了非晶籽晶誘導低溫液相外延自組裝生長高取向zno晶體薄膜。
  18. Typical temperature is 800 - 1000 in cvd diamond process, while the high temperature limits its application in optical window and coating such as gaas, zns etc. low temperature can not only make diamond crystal nucleus finer, reduce surface roughness of diamond films and lessen light dispersion, but also eliminate thermal stress

    化學氣相沉積金剛石膜過程中，襯底的典型溫度為800 1000 ，這么高的溫度限制了其作為gaas 、 zns等低熔點光學材料窗口和塗層的應用。低溫沉積金剛石膜不僅可以使晶粒細化，降低表面粗糙度，減小光的散射作用，而且可以消除熱應力。
  19. In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %

    按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
  20. At present, local morphology was used to discriminate ferroelectric phase area and non - ferroelectric phase area, but once morphology variation of phase transformation was tiny, the ferroelectric phase area and non - ferroelectric phase area was hard to discriminate only from morphology view. however, the introduction of sndm can overcome this limitation, and visualize the investigation of annealing process. combining x - ray diffraction, atomic force microscopy ( afm ) with sndm, the phase transformation process of pzt thin films with different annealing time and of plt films with different annealing temperature were studied, respectively

    結合原子力顯微鏡（ afm ） 、 sndm 、 x射線衍射（ xrd ） ，通過對微區形貌、電容分佈變化和鐵電薄膜結晶情況的表徵和分析，研究了pzt鐵電薄膜和plt鐵電薄膜的晶化過程，分析了不同退火時間對pzt鐵電薄膜微結構，不同退火溫度對plt薄膜的微結構和微區極化分佈的影響，有效克服僅依據形貌特徵判定鐵電相與非鐵電相的局限性，實現鐵電薄膜微區晶化過程的可視化分析，豐富了晶化過程的研究方法。
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