晶膜電晶體 的英文怎麼說

中文拼音 [jīngmódiànjīngtǐ]
晶膜電晶體 英文
epitaxial transistor
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 體 : 體構詞成分。
  • 電晶體 : bjt
  1. The dielectric constants of pt / tb films were influenced by the lattice aberrance and crystal content

    Pt tb薄膜的介電常數受薄膜中鈣鈦礦相晶格的畸變和晶體含量的共同作用。
  2. The dielectric constants were relatively high either lattice aberrance was tiny or crystal content was large

    摻tb薄膜的介電常數在晶格畸變程度小時和在摻tb后使晶體含量出現最大值時都較高。
  3. The enterprise beijing mutual benefithui chemical raw material co., ltd. deals in carbonic acid and electronic industry in addition to formic acid as well as with almond oil

    該企業竭誠為貴公司介紹關于塑料焊接、精密力學、機械學、生活用水、工業用水以及晶體玻璃、燧石玻璃和超聲波清潔費用信息，請撥打+ 86 （ 519 ） 5120087 ， 51 。請不要忘記，垂詢電子工業或真空鍍膜。
  4. Tft lcd thin film transistor liquid crystal display

    薄膜電晶體液晶顯示器
  5. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  6. In this paper, porous nanocrystalline titanium dioxide films were used to modify the surface of quartz crystal microbalance ( qcm ), the response of qcm with high roughness layer hi liquid phase was discussed, and the difference between the theoretic value and frequency response measured was illustrated in detail

    本文採用tio _ 2納米粒多孔膜修飾壓電晶體傳感器，對高粗糙度壓電傳感器的響應進行了探討，闡明了在液相中壓電響應的實際值與理論值產生偏差的主要原因。
  7. In this thesis, a kind of reversible immobilization method based on the plasma - polymerized film ( ppf ) used for effective immobilization of active bio - molecules and easy reproduction of sensors is developed. the surface of quartz crystal microbalance ( qcm ) is firstly prepared with plasma - polymerized film of butyl amine by glow - charge technique and then covered with a negative - charged polyelectrolyte by self - assembling. through strong electrostatic attraction, antibodies ( antigens ) positive - charged are immobilized for the determination of antigens ( antibodies )

    本論文基於等離子體聚合膜，設計了一種既能固定生物活性物質又易於傳感器再生的可逆固定化方法，即採用輝光放電的等離子體沉積技術，先在石英晶體上沉積一層正丁胺等離子體聚合膜，再在膜上自組裝一層帶負電的聚電解質，用以靜電吸附固定抗體（抗原）測定抗原（抗體） 。
  8. The novel vertical carrier - free linear cluster system phoebus for the economical deposition of amorphous and microcrystalline silicon light absorbers by pecvd ideally combines the strengths of proven vacuum production platforms to precisely focus on the needs of solar cell producers : process stability, productivity, yield, footprint, costs of ownership

    新的立式無載體線團系統」菲波斯」 （ phoebus ） ，以pecvd方法經濟地鍍膜無定形的和微晶硅吸光體，理想地結合各種證明可靠的真空生產平臺的優點來精確的聚焦于滿足太陽能電池生產者的需求:工藝的穩定性，生產效率，合格產量率，佔地面積和擁有運營的總成本
  9. Cadmium sulphide or cadmium selenide in polymer based thin film transistor

    聚化合物薄膜電晶體內的硫化鎘或硒化鎘。
  10. Bai shi new development over the years, the company ' s products are mainly trade sales world - renowned brands ; has formed a production and supply of quartz crystal and ceramic capacitors, thick film resistors based serial production lines. main products include : plug posted quartz crystal surface, the surface of quartz crystals and crystal oscillators, posted plug surface, quartz oscillator vco, stickers and vco plug - round version of ceramic capacitors and vertical and horizontal layer ceramic capacitors, chip resistors and resistor ranked / exclusion order and capacitance / second polar body / mixed network

    新佰仕經過多年的發展，公司貿易的產品主要銷售世界知名品牌電子元器件；現已形成了以生產及供應石英晶體?陶瓷電容器?厚膜電阻器為主的系列化產品生產線，主要產品包括：表面貼石英晶體?插件石英晶體?表面貼石英振蕩器?插件石英振蕩器?表面貼壓控振蕩器?插件壓控振蕩器?圓版型陶瓷電容?立式與臥式積層陶瓷電容?排列電阻器?晶元電阻/排阻?排列電容/二極體/混合網路。
  11. All my samples with good orientation are prepared by rf sputtering. then we invest surface morphology and crystal structure, optical and electrical properties of zno films by afm, xrd, hall testing, ultraviolet - visible spectrum photometer and xps et al. zno films are fabricated on gaas substrate

    本文用射頻反應磁控濺射制備了高度c軸擇優取向的zno薄膜，採用原子力顯微鏡（ afm ） 、 x射線（ xrd ） 、 hall測試儀、紫外?可見分光光度計和x光電子能譜等分析測試手段，研究了樣品的表面形貌、晶體結構、光學和電學性能等。
  12. The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem

    論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。
  13. Preparing anti - reflective coating and hydrogen passivation are two key procedures in the process of high efficiency crystalline silicon solar cells

    減反射膜的制備和氫鈍化是制備高效率的晶體硅太陽電池的非常重要工序之一。
  14. Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established

    鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太陽電池性能的影響、表面和界面復合速度的理論表達式；研究得到了減反射膜對太陽電池短路電流增量比的極限；建立了太陽電池光譜響應、柵線電極接觸電阻和少子壽命等測試系統。
  15. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  16. The obtained qcm sensor has sensitive response to the liquid density and can be expected as a density meter. composite films of p - cyclodextrin ( p - cd ) bound to the titanium dioxide nanoparticles were tightly coated on the surface of qcm

    研究發現在乾燥失水的過程中，滴加到tio2多孔膜表面的-環糊精分子與納米二氧化鈦發生縮水反應，形成網狀物質，牢固地結合在壓電晶體表面。
  17. The ra value is 4nm. this implies k : sbn buffered sbn thin films fabricated with the sol - gel process have a

    由此驗證了薄膜與晶體相似的性質一一ksbn薄膜的橫向電光系數大於sbn薄膜。
  18. Fe layers of different thickness have been converted to fes2 thin films by thermal sulfidation. the influence of the thickness on the crystal structure, electrical resistivity, carrier concentration, absorption coefficient and energy gap of fes2 thin films have been investigated

    採用硫化不同厚度的fe膜制備了不同厚度的fes2薄膜的方法，研究了不同厚度fes2薄膜的晶體結構、電阻率、載流子濃度、光吸收系數以及禁帶寬度。
  19. Because p - si is of more special characteristics, comparing to a - si and c - si, firstly, i set forth electrical features of p - si film and acknowledge profoundly electrical mechanism of p - si film. then three parameters of laser annealing, including laser frequency -, accepted - pulse - times and laser power density are studied how to influence crystallization of p - si

    因為多晶硅和非晶硅及晶體硅相比具有更獨特的特點，所以我們先闡述了多晶硅薄膜的電學特點，對多晶硅的導電機理有了深刻的了解；然後研究了激光頻率、受光次數和激光功率密度三個參數對晶化多晶硅的影響。
  20. Modern thin - film transistors typically perform at about half the speed of monocrystalline devices, although the difference is smaller when you compare entire circuits, because components packed in three dimensions need considerably shorter wires

    現代薄膜電晶體的操作速度大約只有單晶元件的一半，然而如果拿整個電路的速度來比較，差距卻沒那麼大，這是因為連接三維結構中的元件所需要的導線會短很多。
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