晶體三極體 的英文怎麼說

中文拼音 [jīngtǐsānjítǐ]
晶體三極體 英文
crystal triode
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 三 : Ⅰ數詞1. （二加一后所得） three 2. （表示多數或多次） more than two; several; many Ⅱ名詞（姓氏） a surname
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. For electrodeposition by dc methods, the metals deposite uninterrupted and the particles were also embeded uninterrupted into the coatings ; for electrodeposition by pc method, the particles with biggish volume were desorbed from the coatings and returned to the electrolyte again owing to the presence of pulse interval ; for electrodeposition by prc method, the particles carried positive charges are much more easy to desorb from the coatings owing to the effecf of reverse pulse current combined with pulse interval, in addition, the reverse pulse current also could dissovle the metals, further accelerates the desorption of particles, thus the particles size embeded in the coatings by prc method is the least

    直流電沉積時，基質金屬的沉積連續進行，粒子在電極表面不間斷嵌入鍍層;單脈沖電沉積由於脈沖間歇的存在使得具有較大體積的粒子會脫附，重新回到溶液中;採用周期換向脈沖時，反向脈沖電流使表面荷正電的較大的粒子更易從電極表面脫附，同時，反向脈沖電流對基質金屬的溶解作用，也會促進粒子的脫附，因此鍍層中復合粒子尺寸最小。隨著鍍層中粒子復合量的增加，三種鍍層的晶粒都明顯細化，說明al _ 2o _ 3的存在阻止了晶粒的長大，提高了電沉積過程中晶核的形成速率。
  2. Secondly, we make an in - depth study and analysis in allusion to the given oscillatory circuit - butler common base harmonic circuit. the detailed analysis of the dynatron which is the main noise source in the oscillatory circuit is also made, including how excitation affects the dynatron and crystal

    然後針對特定的振蕩電路結構-串聯型巴特勒共基振蕩電路-進行深入的研究和分析，並對主振電路中主要的噪聲源-三極體進行的深入分析，包括激勵對三極體及晶體的影響。
  3. Every transistor has at least three electrodes.

    每個晶體管至少有三個電極。
  4. The central peaks of several craters on the flanks of syrtis major are made up of an even more silica - rich rock, granite, that may have formed by extreme crystal separation or by large - scale remelting of earlier basalts

    在大三角側面，幾個火山口的中間尖點是由一種矽含量更高的巖石花崗巖所構成，可能是經極度晶體分化，或早期玄武巖大?圍重新熔融而形成。
  5. The expression of the third - order nonlinear polarization of self - interaction in uniaxial crystals

    單軸晶體中三階非線性自作用極化強度矢量的計算
  6. The results indicated that the dimension, shape and purity of base material could meet the functional demand of solid lubricant ; the thermal decomposition temperature of ptfe resin exceeds 400 c, but organic and inorganic packing filler added in ptfe made the water absorption rate of composite material increased, melting temperature and decomposition temperature decreased, in the meanwhile oxidative decomposition reaction was accompanied ; polar groups such as c = o, c - o - c and so on in the carbon fiber surface is advantageous to increase compatibility with other components and interlayer shearing strength ; uniform design experimental method could help to find the relationship between formula and frictional property by relatively small tests. the developing trend of each formula ' s friction coefficient could be showed by fitting curve ; the friction coefficient with no copper powder or graphite in formula was relatively big. this fact showed that copper powder and graphite should be used cooperatively ; it was found that when the ratio of copper powder to graphite by weight is 15 : 60, 30 : 30 - 40 and 60 : 15 - 30 respectively, the friction coefficient was relatively small. the degree of crystallinity of pure ptfe reached maximum by air cooling and the abrasion loss also reached maximum among three ones ; at the same time, the abrasion loss of solid lubricant sample was also the biggest among three ones ; when solid lubricant matched with 45 # steel axle or gcrl5 steel axle, lubricant transfer film could be formed on metal surface, thus direct contact between the surface of metal friction pair rings was reduced. their working life was elongated extremely ; there was mainly much graphite, a little ptff, moo3, feso4, cus and so on in lubricant transfer film

    試驗結果表明：所選原料的尺寸、形狀及純度可滿足固體潤滑劑的性能要求；聚四氟乙烯樹脂熱分解溫度超過400 ，但在ptfe中加入無機填料會使復合材料吸水率提高，熔融溫度及分解溫度降低，且伴有氧化分解反應；碳纖維表面含有c = o及c - o - c等極性基團，有利於提高其與其它組分的相容性，提高層間剪切強度；均勻設計試驗方法能夠用較少的試驗次數找出配方與摩擦性能間的關系，擬合曲線基本能表示各配方的摩擦系數發展趨勢；配方中不加銅粉或不加石墨，其摩擦系數均較高，說明銅粉和石墨應該配合使用；當銅粉15份、石墨60份時，銅粉30份、石墨30 - 40份時，銅粉60 、石墨15 - 30份時，摩擦系數均具有較低值；純聚四氟乙烯樹脂在空氣冷卻時結晶度最大，磨損量也是三者中最大的；同時，固體潤滑劑試樣在空氣冷卻時的磨損量也是三者中最大的：不論是固體潤滑劑與45 #鋼軸配副或是固體潤滑劑鑲嵌入銅套后與gcr15鋼軸配副，在金屬表面均可形成潤滑轉移膜，從而減少金屬摩擦副表面間的直接接觸，大大延長其使用壽命;轉移膜中主要含有較多的石墨、少量聚四氟乙烯、 moo 。
  7. Circuit board, integrated circuit, resistor, capacitor, chips, rectifier, led, diode, transistor, laser pick - up head and all kinds of electronics component

    電路板集成電路電阻電容主晶元整流管發光管二極體三極體鐳射光頭等各類電子零件
  8. Mainly for capacitance, semiconductor, jingzhen, resistance, ic chips, jiechajian procedures, connecting pieces, switching devices, silicon, triode, diode, piezoelectric ceramic base films, tubes, electron tubes, electronic stamping, precision metal parts, production processes between cleansing processes

    晶元接插件連接件轉接器矽片三極體二極體壓電陶瓷基片顯象管電真空器件等內精密電子沖壓五金零件，生產加工過程工序間的清洗。
  9. , 100a semiconductor devices ; discrete devices ; part 6 : thyristors ; section 2 : blank detail specification for bidirectional triode thyristors triacs, ambient or case, up to 100 a

    半導體器件.分立器件.第6部分:晶體閘流管.第2節:雙向三極晶體閘流
  10. Then we studied the bmhmt method of soi mosfet and its merit : larger drive current which enables it to be the candidate of bjt in realizing bicmos circuits

    之後我們研究了soimosfet的bmhmt工作模式，同時介紹了這種工作模式的優點:驅動電流大，可替代bicmos電路中的三極晶體管實現bicmos電路。
  11. Semiconductor devices ; discrete devices ; part 6 : thyristors : section 3 : blank detail specification for reverse blocking triode thyristors, ambient and case - rated, for currents greater than 100 a

    半導體器件.分立器件.第6部分:晶體閘流管.第3節:電流在100a以下的額定環境和外殼的反向阻擋三極閘流晶體管的空白詳細規范
  12. Larger growth pressure of buffer layer led to the dramatic increase of structural and optical quality of gan epilayer, and the improvement in quality was attributed to the transition of growth mode from 3d to quasi 2d, which was revealed by scanning electron microscope

    發現緩沖層的生長壓力變化對退火后緩沖層表面的狀態影響極大，增大緩沖層生長時的反應室壓力可以明顯提高外延gan的晶體質量和光學質量。通過sem分析，發現提高緩沖層生長壓力時，高溫gan生長明顯經歷了從三維生長到二維生長的過渡，晶體質量明顯提高。
  13. Semiconductor devices. discrete devices. part 6 : thyristors. section one - blank detail specification for reverse blocking triode thyristors, ambient or case - rated, up to 100a

    半導體器件分立器件第6部分:閘流晶體管第一篇100a以下環境或管殼額定反向阻斷三極閘流晶體管空白詳細規范
  14. Semiconductor devices ; discrete devices ; part 6 : thyristors ; section one : blank detail specification for reverse blocking triode thyristors, ambient and case - rated, up to 100 a

    半導體器件.分立器件.第6部分:晶閘管.第1節:電流在100a以下的額定環境和外殼的反向阻斷三極閘流晶體管的空白詳細規范
  15. Semiconductor devices - discrete devices - part 6 : thyristors - section three - blank detail specification for reverse blocking triode thyristors, ambient and case - rated, for currents greater than 100a

    半導體器件分立器件第6部分：晶閘管第三篇電流大於100a環境和管殼額定的反向阻斷三極晶閘管空白詳細規范
  16. According to the following design theory : the dsp calculates in real time and produces three phases spwm waves to control the on or off of the 6 igbts in ipm respectively. ipm then inverts the commutated single phase direct current ( insulated gate bipolar transistor ) into three phases alternating current. when modulated signals of spwm are changed, the on - off time of switches also changes, so as to the voltage and frequency of output signals

    本文提出了一種基於dsp （數字信號處理器tms320f240 ）的通用的三相間接變頻電源系統，利用分段同步調製法和混合查表法，實時計算不同頻率下的采樣周期、電壓幅值、輸出脈寬，產生雙極性spwm波形，經驅動放大後用于ipm （ intelligentpowermodule ）中的絕緣柵雙極型晶體管柵級驅動，以控制電源的輸出電壓和頻率，實現變頻電源的智能數字控制。
  17. Shenzhen luguang electronic technology co., ltd is a high - new electronic technical enterprise, which is specializing in r & d, manufacturing, and selling of various piezoelectric materials, such as piezoelectric frequency components, diodes, transistors, digital television receiver, wireless controller, etc

    深圳市魯光電子科技有限公司，是一家專業研發、生產、銷售各種壓電陶瓷材料，壓電陶瓷晶體頻率元件?二極體?三極體?提供各種電路設計，模組化設計，無線控制器等各種電子產品的供應和技術應用的高新企業。
  18. The most effective converter that fits for such kind of application is a well - known full - bridge three - phase vsi ( voltage source inverter ) converter with igbt ( insolated gate bipolar transistor ) modules, which can be used in wind power generation system or other general purpose utilizations such as asd ( adjustable speed drive ), active rectifiers, ac power supplies, and so forth

    最適合的變換器就是igbt （集成門極雙極性晶體管）三相全橋電壓源變換器，這種拓撲結構的變換器可以應用到風力發電系統或者其他通用的場合，比如asd （變速驅動）系統、有源整流、交流電源等等。
  19. Integrated circuit, transistor, ram, chips, cpu, resistor and capacitor

    各國ic三極體內存晶元cpu電阻電容
分享友人
分享到 Line

分享到臉書