晶體場論 的英文怎麼說

中文拼音 [jīngtǐchǎnglún]
晶體場論 英文
crystal field theory
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 場 : 場Ⅰ名詞1 （平坦的空地 多用來翻曬糧食 碾軋穀物） a level open space; threshing ground 2 [方言] （...
  • 論 : 論名詞（記錄孔子及其門徒的言行的「論語」） the analects of confucius
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. We may conclude that transistors will be used wherever efficient amplification required within a small space.

    我們可以得出結論，凡是在小體積里需要有效放大的場合，都要採用晶體管。
  2. Through charoma theory and metal - bearing ores " color index analysis, the color of the turquoise is quantitated. crystal field spectra of cu2 + ion have been analysed and compared with the oretical calculations, the results show that the basic color of turquoise ( azure ) is related to the existence of cu2 + octahedron. in this charpter, quantum mineralogy theory is used in quantity

    通過吸收光譜實驗，利用量子礦物學的有關知識，對綠松石中銅離子的晶體場譜進行了計算，並利用晶體場理論解釋了綠松石吸收光譜，揭示了綠松石顏色形成的主要原因是聯系著晶體場譜的顏色：過渡金屬銅離子對綠松石的顏色起主要作用? ?決定了綠松石的基本色調（天藍色） 。
  3. Abstract : we have studied the spontaneous emission from a three - level atom with an external - driving field in a photonic crystal. as a result of quantum interference and photon localization, the population in the two upper levels displays quasi - oscillatory oroscillatory behavior. this depends on the initial atomic state and the relative positions of the two upper levels from the forbidden gap. the intensity and the phase of the external field can affect spontaneous emission from the atom. the properties are different from a three - level atom either in vacuum or in aphotonic crystal without an external driving field

    文摘:討論了在雙光子驅動場作用下，三能級原子在光子晶體中的自發發射問題.由於量子干涉和光的局域化作用，兩個上能級中的占據數將具有周期振蕩或準周期振蕩的性質，這不僅依賴于兩個上能級與禁帶的相對位置，同時也依賴于原子的初始狀態，而且還與驅動場的強度、驅動場的入射位相有關.這些性質既與真空中帶有驅動場的原子的自發發射性質不同，也有別于無驅動場作用下光子晶體中三能級原子的自發發射性質
  4. The mechanism of index ellipsoid of linbo _ 3 crystal distorted with an external applied electric field by means of the electro - optic tensor as investigated. based on the operation principle of m - z waveguide, the operation mechanism of

    電光效應理論是從雙折射晶體的折射率橢球出發，分析外加調制電場通過晶體電光張量對折射率橢球的影響，從而分析電光效應的機理。
  5. In this paper, in the course of studying the physical principles of electro - optics effect of bso, the characteristic of bso and ( the planar electric field image ) is analyzed thoroughly on the based of swing modulate theory

    本論文在對bso晶體電光效應物理機理的研究中，從晶體的振幅調制理論出發，對bso晶體特性以及bso晶體內形成二維電場圖像進行了深入的分析。
  6. Crystal field theory

    晶體場理論
  7. The judgment of the element to be zero in calculating the energy - hamiltonian - matrix in the crystal - field theory

    晶體場理論計算能量哈密頓矩陣中為零矩陣元的判別
  8. ( 4 ) light - induced scattering in sbn : 61 : cr crystals under applied fields and its suppression are studied. a new method is proposed that the scattering light can be suppressed through erasure of scattering gratings by higher power pump beam ( coherent or incoherent )

    （ 4 ）討論了sbn 61 cr晶體在外加直流電場作用下的光感應光散射現象及其消除方法，提出通過引入另外一束相對高強度的光束（相干或者非相干） ，利用其對散射光柵的擦除作用消除信號光束的散射。
  9. Liquid crystal tunable filters as an important device of wavelength division multiplexing and dense wavelength division multiplexing systems is caused attention by research department, especially many foreign research institute are studying it. but in our country its study is lag. and normal incidence of the crystal is almost the case, because the liquid crystal box is very thin, the field angle may be large and the pose of liquid crystal box may have impact on the measuring result. so, study in such subject, especially the liquid crystal box ' s position angle, is academic and valuable

    各種改進液晶電光可調諧濾光片的措施的實現，使得液晶調諧濾光片成為一種很有應用前景的電光調諧濾光片，特別是用於光纖通信中的波分復用系統和密集波分復用系統，將使光纖的傳輸客量大大增加目前國外在這方面的研究進展很快，而國內在這方面的研究比較薄弱，而且通常採用光線正人射晶體進行研究，由於液晶盒很薄，視場角可以很大，液晶盒的擺放對測量結果影響很大，因此對該器件進行深入的研究，討論液晶盒的方位角影響是很有必要的。
  10. And the steady - state coupling response time rdecreases from 0. 8s to 0. 3s. but there are almost no changes in 2peak with fields applied. ( 2 ) using the characters of two - beam coupling in sbn : 61 : cr crystals under applied fields, applications in image edge - enhancement and photorefractive edge - enhancement joint transform correlator are investigated

    （ 2 ）研究了外加直流電場作用下sbn 61 cr晶體的二波耦合特性在光學圖像邊緣增強以及光折變邊緣增強聯合變換相關器等方面的應用，討論了外電場對光折變邊緣增強及光折變聯合變換相關識別效果的影響。
  11. No5 ： image processing based on the combination of high - resolution electron microscopy and electron diffraction ( invited paper ), f. h. li, microscopy research and technique, 40 ( 1998 ) 86 - 100

    場發射高分辨電子顯微鏡在揭示原子解析度晶體缺陷上的應用（特邀論文） ，李方華，科儀新知， 21 （ 1999 ） 8 - 15
  12. No3 : revealing crystal defects at atomic level by field - emmission hrem ( invited lecture ), f. h. li, proceedings 7th asia - pacific electron microscopy conference, singapore, june24 - 30, 2000, pp. 26 - 27

    場發射高分辨電子顯微鏡在揭示原子解析度晶體缺陷上的應用（特邀論文） ，李方華，科儀新知， 21 （ 1999 ） 8 - 15
  13. This paper chooses bsim3 ( berkeley short - channel igfet model ) the model to be extracted, which is for short channel mos field effect transistor specially. these works are presented in this paper. 1

    本論文選取目前業界佔主流地位的bsim3 （ berkeleyshort - channeligfetmodel ）為將要提取的模型，它是專門為短溝道mos場效應晶體管而開發的一種模型。
  14. By sufficiently making use of the knowledge of the semiconductor, we have analyzed the transference and scatterance of the carriers as well as their emergence and being captured by disfigurement in crystal lattice from angles of crystal micro mechanism, the structure of the energy band and the crystal potential field

    本文充分利用半導體的能帶理論，從薄膜晶體結構、能帶結構和晶體勢場的角度，分析載流子的遷移、散射以及載流子的產生和晶體結構缺陷對載流子的捕獲。
  15. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  16. Based on the photoelectron and microelectronics, communication and net technology has become the core of high - tech. as the main carriers of information technology, lasers and display devices play significant roles. compare to the inorganic semiconductors, the organic semiconductors have much advantages

    以多種工藝在硅基襯底和玻璃襯底上制備了不同結構的有機薄膜場效應晶體管（ otft ） ，論述了不同制備工藝的優缺點，以及器件結構對性能的影響。
  17. And some relevant property parameters of waveguides are measured. based on the band transport model, the buildup of space charge field and the light - induced refractive index changes in photorefractive crystals are discussed

    首先根據帶輸運模型的動力學方程組，討論了光折變晶體中光致空間電荷場的建立以及由此而產生的折射率變化。
  18. At the same time we obtained that the shg conversion efficiency of the flattened gaussian beam is higher than that of the gaussian beam under the same condition ; in section 3, we have computed the theoretical conversion efficiency of the thg on the flattened gaussian beam, where we also have worked out the type - i and type - 11 ( 1 ) thg conversion efficiency curves versus the same effectors, and found the flattened gaussian beams thg conversion efficiency is higher than that of the gaussian beam too ; in the section 4, we have simulated the field distribution of the shg and thg wave on the flattened gaussian beam

    在相同條件下，得出了平頂高斯光束的倍頻轉換效率高於高斯光束的倍頻轉換效率；第三章對平頂高斯光束在clbo晶體上的類和類混頻轉換效率與其影響因素的關系進行了數值模擬和計算，並同高斯光束進行比較，同樣得到混頻時，平頂高斯光束的轉換效率高於高斯光束的混頻轉換效率的結論；第四章模擬計算了平頂高斯光束的倍頻、混頻波橫向光場的分佈形式，得到了諧波場仍為均勻平頂高斯光束的結果。
  19. This paper shows the investigation on the magnetic properties of the single crystal ergag under high magnetic field by quantum theory, and gains the magnetic anisotropy. it is in good agreement with the result of the experiment. using quantum theory, taking the special microscopic structure of ergag into account, we calculate and analyse the splitting of the lowest level ( 4i15 / 2 ) according to the crystal field

    本文作者經過詳細推導和計算第一次用量子理論定量計算了磁場作用下單晶ergag石榴石的磁特性，得出了在外磁場下ergag石榴石在溫度4 . 2k時產生的與實驗基本吻合的磁性各向異性現象，利用量子理論，鑒于ergag的特定的微觀結構，計算基態（ 4 ~ i _ （ 15 / 2 ） ）能級在晶場作用下的劈裂，得出由於ergag的順磁性，故其晶場作用下晶體的總磁矩應該為零。
  20. Hfets ( modulation doped ) : modfets ? basic device, theory. deep level problem ( transconductance collapse ) ; pseudomorphic solution. telecommunications applications ? key features : gain, bandwidth, linearly, noise

    調節摻雜場效電晶體-基本元件，理論。深能階問題（電導崩塌）與假晶方案。通訊應用-主要特點：增益，頻寬，線性度，雜訊。
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