晶體生長器 的英文怎麼說

中文拼音 [jīngtǐshēngzhǎngqì]
晶體生長器 英文
crystal grower
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Based the eag - i etchant, a new etchant was developed, with which the etch pit pattern on ( 110 ), ( 111 ) and ( 100 ) faces of czt crystals can emerge immediately and effectually. this pager investigated relation between the ( 110 ) faces of cutting from crystals conveniently and accurately by laser reflex method. by the surface treatment, the nuclear radiation detector was fabricated with ( 110 ) of czt crystal and strong 241am responsibility was observed

    在改變e _ （ ag ）腐蝕液的配方的基礎上，研製了新的腐蝕液，可方便、快速、有效的顯示czt不同晶面的缺陷蝕坑形貌;研究了利用激光正反射法和自然解理的不同（ 110 ）面之間的關系，方便、快速、準確的進行定向切割晶體的方法;採用生長的czt單晶體自然解理的（ 110 ）面，經過表面處理，試制了探測器元件，對24lam有較強的響應。
  2. Those cells that do die, perhaps in the transmutation process ( along with other toxins unnecessary to the crystalline form ) are filtered out by two of these four new organs which grow slightly above the hipbone, expanding the size of the lower belly

    那些的確死亡的細胞，也許在轉化過程中（以及那些對水晶體而言不需要的毒素）被這4個新器官中的2個過濾走，它們生長在髖骨的稍上方，擴展了腹部下半部的尺寸。
  3. The as - grown crystals were characterization by cutting and directional, x - ray diffraction, high resolution ohmmeter, ir transmission spectroscopy, visible light absorption spectroscopy, scan electronic microscopy ( sem ) and positron annihilate time technique ( pat ). the ir transmittance of czt single crystals grown with cd - riched is about 53 %, while 23 % with no cd riched

    採用解理實驗、 x射線衍射、電學性能測試、紅外透過譜測試、可見光吸收譜測試、 sem蝕坑分析、探測器的試制等分析測試方法，並首次採用正電子湮沒壽命譜分析方法來研究czt單晶體的空位缺陷，綜合表徵了所生長的晶體的質量和性能。
  4. We have grown ingaas / algaas strained quantum well laser by mbe. we studied the doped density in the cladding layer

    採用分子束外延設備mbe （ molecularbeamepitaxy ）對所設計的應變量子阱結構激光器進行晶體生長。
  5. In the past 21 years dalian office finished more than 120 projects all over north - east in the field of microelectronic, optical fiber and cable, lcd, biological and pharmaceutical, mechanic, assembly, steel, ship manufacturing and domestic buildings. some of the projects got the prize from national or provincial construction department. below are the reference projects dalian office finished these years : dalian dongfu lcd co., ltd, dalian haire industry park, guangyang bearings dalian co., ltd, konica dalian co., ltd, canon dalian office appliance co., ltd, pacifica electronics co., ltd, photoelectron dalian co., ltd, hyundai electronics dalian, rhi dalian co., ltd, yuanda pharmaceutical co., ltd, siemens vdo auto electronics changchun, toyota tianjin precise products co., ltd 6000, toyota zhangjiagang technology co., ltd, shenyang sico semiconductor co., ltd, dalian dongxian and dalian orient precise products co., ltd. dalian office will carry the principle make best design, provide satisfying service to provide our best service to the clients

    Edri大連分院成立至今完成120多項工程設計監理及工程總承包項目，其中多個項目工程設計獲得國家和部省級科技進步獎，先後完成了大連東福彩色液晶顯示器工程大連海爾工業園光洋軸承大連有限公司柯尼卡大連有限公司佳能辦公設備大連有限公司太平洋電子有限公司光電子大連有限公司現代電子大連有限公司奧鎂大連有限公司，大連高新生物制藥有限公司大連保稅區國際車城遠大制藥有限公司西門子威迪歐汽車電子長春有限公司豐田合成天津精密製品有限公司豐田合成張家港科技有限公司，沈陽科希-硅技半導體技術第一有限公司大連東顯電子有限公司大連東方精工有限公司等一大批高科技產業園區設計項目，並且進行全程質量跟蹤服務，在業內樹立起edri大連分院良好口碑，贏得了客戶廣泛好評，為我院在東北地區的發展做出了自己的貢獻。
  6. With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models

    熱力學理論和方法已足以獲得準確的相平衡關系；然而即使對于簡單的二元物系的結晶過程，晶核形成和晶體生長動力學的研究仍面臨許多困難，通常採用經驗模型表述，而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵，因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。
  7. They would have sensors designed to detect changes in the eye that are related to disease, such as the excessive growth of blood vessels that occurs in amd

    晶元還配有用來檢測病變的傳感器，像在amd病體中就會出現血管過度生長的現象。
  8. Based on the requirement of the device, we grow the films of silicon of high quality. the thickness of the epilayer is from 0. 4 u m tol p m, the doping concentration can be controlled conveniently

    然後，根據器件的要求，利用uhv cvd技術，生長出優質薄硅外延片，其厚度在0 . 4 m 1 m ，摻雜濃度可任意調節，晶體質量良好。
  9. The analyses given in this paper to quasi - three - level for 946 nm laser are complete. the relation between 946 nm laser transmission and optimal crystal length has been derived from the rate equations describing the population inversion and the photon density in the laser cavity in the steady - state case. the minimal claims to coating have been given on the base of contrasting 946 nm transmission with 1064 nm transmission in the condition of different cavity losses and how the pump beam radius in the laser crystal and optimal crystal length affect the laser threshold and output power of 946 nm laser has been given as well

    對產生946nm譜線的準三能級結構給出了較為完整的分析，利用激光諧振腔處于穩態時的速率方程，導出了準三能級nd ： yag946nm起振時，透射損耗與最佳激光晶體長度的關系，在與1064nm透射損耗相比較的基礎上，給出了不同的腔損耗情況下的最低鍍膜要求，並且給出了激光閾值、輸出功率和最佳激光晶體長度及泵光光斑大小的關系，這為設計室溫下高效運轉的946nm激光器的提供了理論基礎，這種分析方法對研究此類低增益，準三能級或三能級激光系統輸出特性有借鑒意義。
  10. - ray at room temperature got 40 %. the results show that the modified growth technique is a new and promising method for grow ing highly purity and perfect cdse single crystals, and by improving the technique of single crystals growth and fabricating process, the resolution of cdse detectors can be improved further

    晶體生長和探測器制備工藝技術是制備性能優異的探測器的基礎，因此，通過不斷改進晶體生長過程和探測器的制備工藝技術，可以制得低背景噪聲、性能穩定及能量解析度較高的cdse室溫核輻射探測器，這也是需要進一步研究和提高的地方。
  11. The other has two metal - insulator - semiconductor ( ms ) contacts with lower leakage current ( less than 4 pa, 300v ) and better energy resolution ( about 10 % fwhm for 241am 59. 5kev line ) and poor working stability. in theoretical studies, the analysis on the phase equilibrium in the vapor growth of cdse single crystals shows that the stoichiometry of cdse crystals can be controlled effectively by controlling the stoichiometry of starting materials and the vapor growth temperature. besides, the investigation of the transporting properties of charge carries in cdse detectors indicates that the noise in energy spectrum detected by using the detectors with msm structure is caused by the hole injection, which is induced by electron injection and the light injection

    本文把cdse單晶體的生長、單晶體的成分、單晶體的性能以及單晶體在室溫核輻射探測器中表現出來的性能結合起來進行了比較系統的研究；採用垂直無籽晶氣相提拉法生長出了電阻率為10 cm量級、尺寸為中10mm 30mm的單晶體；制備出了能量解析度達10 （ fwhm ） （對~ （ 241 ） am59 . 5kev譜線而言）的cdse室溫核輻射探測器，取得了較好的研究結果。
  12. The results show that crystal inhomogeneities and suitable contacts are critical to the fabrication of high quality cdznte spectrometers. the modified growth technique is a new and promising method for growing highly pure and perfect cdznte single crystals. good quality ohmic contact detectors are achieved when gold or indiumare deposited as electrodes on polished and chemically etched surface

    結果表明：材料內部的缺陷和歐姆接觸是影響器件性能的兩個關鍵因素，採用改進的富鎘氣氛下坩鍋旋轉下降法生長的晶體具有較低的缺陷濃度，適合製作探測器，採用au 、 c可得到歐姆接觸。
  13. Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic

    以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。
  14. Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors

    我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料，用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ （ 1 - x ） zn _ xte晶體。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究，製作了厚1 ? 1 . 5mm的探測器，測試了c 、 in 、 au等不同金屬的電極接觸性能，並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析，同時測得的~ （ 241 ） am源的能譜。
  15. At every step of production, from crystal growth to device packaging, numerous refinements are being made to improve the yield and reliability.

    在生產中，為提高其成品率和可靠性，從晶體生長到器件封裝每一步工序均有很多細致工作要做。
  16. It is not only the satisfactory substrate used for the epitaxy growth of infrared detector material hgcdte, but also attractive candidates for the manufacture of high quality x - ray or y - ray detectors, photoelectronic modulator, solar cell, and laser windows etc. no matter what the crystal is used as detectors or epitaxy substrate, it is of vital importanteto obtain high quality cdznte crystals with perfect surface

    它不僅是生長紅外探測器材料hgcdte最理想的外延襯底，而且還被廣泛用於制備高性能x射線或射線探測器、光電調制器、太陽能電池和激光窗口等。獲得高性能、高質量的czt晶體是至關重要的。無論是作探測器還是作外延襯底等都要求它的表面質量要非常高，因為表面質量會直接影響到器件的性能。
  17. Up to date, it is still very hard to grow gan bulk crystals, so the heteroepitaxial growth of high quality gan thin films is the premise for the development of gan - based devices. at the same time, the rapid progress on devices requires better ohmic contact between metals and gan, so much more research work must be carried out at once

    由於gan體單晶難以制備，生長高質量的薄膜單晶材料是研究開發gan基器件的基本前提條件，同時器件的發展對電極的制備提出了更高的要求，因而研究金屬電極與gan的接觸成為必然。
  18. The measurements on composition distribution, carrier concentration and mobility revealed that most of its properties could not satisfy the requirements of ir detector at the as - grown state. further treatments are necessary

    測試了晶體的光學及電學性能，根據測試結果，僅有部分生長態的晶片可以滿足紅外探測器的要求，還需對晶體進行后續處理以提高其性能。
  19. In this paper, a parallel - resonance induction heating power for equipments that used to grow laser crystal has been developed, it applies power electronics theory and adopts full - controllable electric semiconductor device igbt

    本文基於電力電子理論，採用全控型電力半導體器件igbt ，研製了適用於激光晶體生長設備的中頻感應加熱電源。
  20. As for our 3 # detector, we didn " t find response, which may attribute to the difficulty in cubic gan growth and the bad qua1ity of the epitaxia1 1ayer

    但3探測器沒觀察到應有的l響應特性，這與立方相結構的gan材料生長困難，晶體質量不高有關。
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