晶體生長爐 的英文怎麼說

中文拼音 [jīngtǐshēngzhǎnglú]
晶體生長爐 英文
crystal growing furnace
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  1. The process of growing ktp crystal of high quality and low conductivity was studied. it was pointed out that many factors such as the uniformity of temperature distribution in the furnace, the accuracy of temperature control, the quality and direction of seed crystal and the speed of temperature drop all had an important influence on the quality of ktp crystal

    研究了生長高光學質量、低電導率ktp晶體的工藝過程，指出晶體生長爐溫度場的均勻性、控溫精度、籽晶的質量和定向以及降溫速度的快慢對晶體的光學質量有著重要的影響。
  2. On the basis of the improvement on the crystal growth furnace, the new nlo crystal k2al2b2o7 ( kabo ) has been grown by the top - seeding flux method

    在對爐體改進的基礎上，用頂部籽晶法生長新型紫外非線性光學晶體k _ 2al _ 2b _ 2o _ 7 （ kabo ） 。
  3. Etc. heaters mosi2, sic for annealing furnace and single crystal furnace, high purity oxides high purity rear earth oxides, sio2, al2o3, tio2, ti2o3 and ti3o5 etc. for crystal growth and optical coatings. w, mo crucibles and w, mo products for crystal growth, fire - resistant materials and products for heat isolating during crystal growth

    Etc . ，退火爐及單晶爐用發熱體硅化鉬，炭化硅，晶體生長和光學鍍膜用高純氧化物稀土氧化物，二氧化硅，三氧化鋁，二氧化鈦，三氧化二鈦，五氧化三鈦等，生長晶體用鎢鉬坩堝及鎢鉬製品和保溫用各種耐火材料及製品。
  4. And it is difficult to apply general pid control or fuzzy control to the equipment of crystal growth with nonlinear and great pure hysteresis characteristics

    晶體生長爐具有參數時變、大慣性和大純滯后的特點，應用常規pid控制演算法，動態性能不理想；應用模糊控制演算法，穩態精度不能令人滿意，都難以實現有效的控制。
  5. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  6. The influence of nano - al2o3 on the sintering and the properties of the si3n4 ceramics was researched in this paper. the samples with different amount of nano - al2o3 were obtained by using pressureless sintering at 1600, 1650, 1700 in the nitrogen atmosphere. the microstructure and the composition of the ceramics were determined by the means of x - ray, sem, micro - hardness meter etc. it is show that the sisty ceramics can be densified at 1650c to % percent of the theory density through the addition of nano - al2o3 ( the value could be 90 percent by other technique ). the crystalline growth of the cylindrical - si3n4 and the ratio of its longitude to its diameter are increased with the addition of nano - al2o3. a uniform microstructure and an fined crystal as well as more sialon phases can be obtained in the si3n4 ceramics through the addition of that

    實驗結果表明：在碳管爐中、氮氣保護下進行燒結，添加劑為納米al _ 2o _ 3粉末時，由於納米粉末的高活性、高燒結驅動力，在1650就可使si _ 3n _ 4完全地燒結，並使其緻密度可達理論密度的96以上（比其它工藝高6左右） ；同時，納米al _ 2o _ 3地加入大大促進了長柱狀? si _ 3n _ 4的生長和發育及柱狀晶長徑比的提高，使微觀結構均勻、細化，形成了更多力學性能優異的固體? sialon相，減少了不利於陶瓷材料性能的晶間玻璃相，凈化了晶界。
  7. Under the condition that the variance of temperature in the furnace was lower than 2. 5oc, the accuracy of temperature control was higher than 0. 2oc and the speed of temperature drop was 0. 2oc ~ 2oc, we grew doped - ktp crystals without obvious defects by immerged - seeded solution method

    在晶體生長爐溫場均勻性高於2 . 5oc 、控溫精度高於0 . 2oc 、降溫速度為0 . 2oc ~ 2oc的條件下，採用浸沒籽晶緩慢降溫法生長出宏觀無明顯缺陷的摻質ktp晶體。
  8. In crystal growth experiment, aggas2 crystal was growen in special quartz ampoule by crucible descending method ( b - s method ). the equipments were used, which consist of a two - zone vertical growth furnace whose temperature gradient is tunable, a descending device with decelerating rate of 1 : 2000, a controlling system of electy and a temperature testing system using thermal couples

    晶體生長實驗中，我們利用上下溫度梯度可調的二溫區管式生長爐， 1 2000減速比的旋轉下降系統，電氣控制系統和密集適時測溫系統等，在特殊形狀的石英生長安瓿中，採用坩堝下降法（ b - s法） ，以合成的aggas _ 2多晶原料進行晶體生長。
  9. Crystal growing furnace

    晶體生長爐
  10. At present, the crystal growth equipment is equipped with vacuum tube hf ( lmhz - 2. 5mhz ) induction heating power supply. while this supply has many disadvantages, such as low reliability, short longevity of vacuum tube, operational safety, low transfer efficiency

    目前，用於晶體生長的區熔式單晶爐配套使用的是國外進口或國內生產的真空電子管式高頻感應加熱電源，存在諸如可靠性差、電子管使用壽命短、操作不安全、變換效率低等問題。
  11. While this kind of power supply has many disadvantages, such as low reliability, short longevity of vacuum tube, operational safety and low transfer efficiency, existing huge capacity solid induction heating power supply cannot replace them to meet industrial needs

    目前，國內用於晶體生長的區熔式單晶爐配套使用的是國外進口或國內生產的真空電子管式高頻感應加熱電源，存在諸如可靠性差、電子管使用壽命短、操作不安全、變換效率低等問題。
分享友人
分享到 Line

分享到臉書