晶體生長基礎 的英文怎麼說

中文拼音 [jīngtǐshēngzhǎngjīchǔ]
晶體生長基礎 英文
foundation of crystal growth
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 礎 : 名詞（墊在房屋柱子底下的石頭） plinth
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  1. This paper has emulated the complex process of bioceramic " s degradation by using the computer simulation technique and studying the principle of material " s degradation, and combining the grain growing model with material degradation model

    本文利用計算機模擬技術，在深入研究了生物陶瓷體內降解機理的基礎上，將晶粒長大模型和材料降解模型有機結合，用於模擬生物陶瓷的降解過程。
  2. Based the eag - i etchant, a new etchant was developed, with which the etch pit pattern on ( 110 ), ( 111 ) and ( 100 ) faces of czt crystals can emerge immediately and effectually. this pager investigated relation between the ( 110 ) faces of cutting from crystals conveniently and accurately by laser reflex method. by the surface treatment, the nuclear radiation detector was fabricated with ( 110 ) of czt crystal and strong 241am responsibility was observed

    在改變e _ （ ag ）腐蝕液的配方的基礎上，研製了新的腐蝕液，可方便、快速、有效的顯示czt不同晶面的缺陷蝕坑形貌;研究了利用激光正反射法和自然解理的不同（ 110 ）面之間的關系，方便、快速、準確的進行定向切割晶體的方法;採用生長的czt單晶體自然解理的（ 110 ）面，經過表面處理，試制了探測器元件，對24lam有較強的響應。
  3. On the basis of the improvement on the crystal growth furnace, the new nlo crystal k2al2b2o7 ( kabo ) has been grown by the top - seeding flux method

    在對爐體改進的基礎上，用頂部籽晶法生長新型紫外非線性光學晶體k _ 2al _ 2b _ 2o _ 7 （ kabo ） 。
  4. Abstract : while we were analyzing the proposed theory about the crystal growth, we doubted that the interface phase existed in the process of crystal growth. with this, we had looked for a lot of references connected and analyzed them. we find that the interface - phase does exist in the process of crystal growth and takes a critic role. therefore, we divide the interface - phase into three co - relative parts : interface layer, adsorptive layer and transitive layer. base on the above ideal, we demonstrate the role of interface layer, adsorptive layer and transitive layer in the process of crystal growth respectively. furthermore, we proposal the interface - phase model about the crystal growth

    文摘:在分析前人的晶體生長理論時，作者認為晶體生長過程中可能存在界面相；在分析各種晶體生長現象后認為，晶體生長過程中界面相是存在的，並起著十分重要的作用；通過分析研究，將晶體生長過程中的界面相劃分為3個有機的組成部分：界面層、吸附層和過渡層；並進一步論述了界面層、吸附層和過渡層在晶體生長過程中的地位與作用；在此基礎上提出了界面相模型。
  5. The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4, which makes the procedure more convenient and the sedimentation more compact. based on the syntheses of the raw materials, the czochralski method was used to grow the crystal from different charges. by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition, the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing, but is related to the impurity of the charges

    採用多種方法合成了用於晶體生長的yvo _ 4原料，改進了液相合成法中獲得yvo _ 4沉澱的方法，使得該方法更為簡便，獲得的沉澱更加緻密；在原料合成的基礎上，採用提拉法對來源不同的生長原料進行了生長，並通過對在相同氣氛下生長的晶體的紫外透過譜線的對比，指出了該吸收峰的存在與晶體生長方向及有無退火無關，進而提出該吸收峰的存在與合成原料中有無雜質有關。
  6. According to the raman selection rule and the pl measurement, it is reasonable to evaluate the quality of galnp / algalnp mqw by analyzing the relative intensity ratio of a1p - lo / to. ( 4 ) a new modified random element isodisplacement ( mrei ) model is set up to calculate the dependence between the long - wavelength optical phonon frequencies and the composition of iii - v - type ab1 - xcx mixed crystals. the second neighbor force constants are still assumed to be a linear variation with the composition, but the two first neighbor force constants can be evaluated to be a negative exponent variation with the composition, using the overlapped repulsive potential of the ion crystal combination

    通過實驗我們找到了在這些結構參數上生產gainp algainpmqw的較理想的結果； （ 3 ）首次用喇曼（ raman ）散射方法研究了常溫下的gainp algainp多量子阱結構，除了指認出喇曼光譜中各光學聲子模外，還結合樣品光致發光譜的測量結果，分析發現喇曼光譜中alp - lo to的相對強度比可以在一定程度上評定晶體gainp algainpmqw的生長質量； （ 4 ）在修正的隨機元素等位移? mrei模型的基礎上建立了一個新模型，計算了ab _ （ 1 - x ） c _ x型?族半導體混晶的長波長光學聲子模頻率的組分變化關系。
  7. The analyses given in this paper to quasi - three - level for 946 nm laser are complete. the relation between 946 nm laser transmission and optimal crystal length has been derived from the rate equations describing the population inversion and the photon density in the laser cavity in the steady - state case. the minimal claims to coating have been given on the base of contrasting 946 nm transmission with 1064 nm transmission in the condition of different cavity losses and how the pump beam radius in the laser crystal and optimal crystal length affect the laser threshold and output power of 946 nm laser has been given as well

    對產生946nm譜線的準三能級結構給出了較為完整的分析，利用激光諧振腔處于穩態時的速率方程，導出了準三能級nd ： yag946nm起振時，透射損耗與最佳激光晶體長度的關系，在與1064nm透射損耗相比較的基礎上，給出了不同的腔損耗情況下的最低鍍膜要求，並且給出了激光閾值、輸出功率和最佳激光晶體長度及泵光光斑大小的關系，這為設計室溫下高效運轉的946nm激光器的提供了理論基礎，這種分析方法對研究此類低增益，準三能級或三能級激光系統輸出特性有借鑒意義。
  8. - ray at room temperature got 40 %. the results show that the modified growth technique is a new and promising method for grow ing highly purity and perfect cdse single crystals, and by improving the technique of single crystals growth and fabricating process, the resolution of cdse detectors can be improved further

    晶體生長和探測器制備工藝技術是制備性能優異的探測器的基礎，因此，通過不斷改進晶體生長過程和探測器的制備工藝技術，可以制得低背景噪聲、性能穩定及能量解析度較高的cdse室溫核輻射探測器，這也是需要進一步研究和提高的地方。
  9. Main research contents and achievements of this thesis is as follows : l. this paper carries through particular test and analysis to the basic physical - chemical properties of gaojiawang palygorskite, an environmental mineral fibre, by xay, ir, tem, sem etc. this paper has also discoursed upon the development appliance research status in quo and directions of palygorskite. 2. according to the preceding surface modification research achievements to nonmetal mineral materials, the author combines the self characteristics of palygorskite such as the ratio of length and diameter, typical nano - rank particle diameter, big ratio surface area, well - developed crystal growth imperfection and lattice defect etc. the author also designs organising modification ortho - experimentation of palygorskite by adopting iso - propyl alcohol as thinner of wd - 51 and ndz - 401, and acquires the best craft parameters and craft conditions for gaojiawang palygorskite original ore organising modification, namely : wd - 51 concentration 1. 6 % ( wt % ), modification temperature 120 ?, and modification time 60 mins ; ndz - 401 concentration 2. 0 % ( wt % ), c modification temperature 120, modification time 80 mins

    在前人對非金屬礦物材料表面改性的基礎上，結合環境礦物纖維?坡縷石自身的特點（如：長徑比、典型的納米粒徑、大比表面積、發育的晶體生長缺陷和晶格缺陷等） ，通過對坡縷石有機化改性設計正交試驗，採用（ ch _ 3 ） _ 2choh作為稀釋劑，獲得了採用wd - 51和ndz - 401對高家窪坡縷石原礦進行有機化改性的最佳工藝參數和工藝條件，分別為： wd - 51的濃度為1 . 6 （ wt ） ，改性溫度為120 ，改性時間為60min ； ndz - 401的濃度為2 . 0 （ wt ） ，改性溫度為120 ，改性時間為80min 。
  10. Finally, some efforts were employed to eliminate the support al2o3, which is very difficult to remove after the crystallization of al2o3 during the synthesis process. it is proved that hydrothermal process is an effective method to remove al2o3

    由於a12o :在碳管生長期間從非晶變為晶體，十分難去除，因而提純過程相對復雜，最終結果顯示水熱法對氧化鋁的去除是比較有效的，可作為進一步優化提純的基礎。
  11. Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors

    我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料，用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ （ 1 - x ） zn _ xte晶體。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究，製作了厚1 ? 1 . 5mm的探測器，測試了c 、 in 、 au等不同金屬的電極接觸性能，並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析，同時測得的~ （ 241 ） am源的能譜。
  12. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  13. Based on the theory of crystal growth, we realized effective control on the crystallizing process of nickel hydroxide by coordinate precipitation method

    本文在晶體生長理論的基礎上，採用配位沉澱法實現了對ni （ oh ） _ 2結晶過程的有效控制。
  14. It shows that the interface energy and the heterogeneous nucleation barrier were changed by the doping of tb. so the relationship between crystal content and tb doped concentration can be " described as : y = 1 - exp ( k1 exp ( k cos ( ( x + ) 3 ) it shows that the crystal content will reach a maximum with increasing tb doped concentration because of the influence of heterogeneous nucleation barrier variation

    本文在分析界面能的基礎上，推導了在一定條件下薄膜受摻tb影響的鈣鈦礦相析晶含量的理論表達式為： y 1 yxp （ k ； xxp （ kcos （ s ? （ x a ） 』 ）該式表明了受體系成核界面能的變化影響，晶體生長受摻tb濃度影響出現極值。
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