晶體生長技術 的英文怎麼說

中文拼音 [jīngtǐshēngzhǎngjìshù]
晶體生長技術 英文
crystal technique
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 技 : 名詞（技能; 本領） skill; ability; trick; technique
  • 術 : 術名詞1. （技藝; 技術; 學術） art; skill; technique 2. （方法; 策略） method; tactics 3. （姓氏） a surname
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  1. This paper has emulated the complex process of bioceramic " s degradation by using the computer simulation technique and studying the principle of material " s degradation, and combining the grain growing model with material degradation model

    本文利用計算機模擬技術，在深入研究了生物陶瓷體內降解機理的基礎上，將晶粒長大模型和材料降解模型有機結合，用於模擬生物陶瓷的降解過程。
  2. The short time it took to produce its first 4 - inch ingot is not only a testimony to the competency of tera xtal s engineering team, but also represent a step forward towards change in the japanese and american domination of the crystal growth industry

    有別於半導體用的矽晶，鉭酸鋰屬于硬脆的氧化物材料，融點高達1650 ；長晶的生產難度相當高，其關鍵在於人才、技術與經驗的長期培養。
  3. In the past 21 years dalian office finished more than 120 projects all over north - east in the field of microelectronic, optical fiber and cable, lcd, biological and pharmaceutical, mechanic, assembly, steel, ship manufacturing and domestic buildings. some of the projects got the prize from national or provincial construction department. below are the reference projects dalian office finished these years : dalian dongfu lcd co., ltd, dalian haire industry park, guangyang bearings dalian co., ltd, konica dalian co., ltd, canon dalian office appliance co., ltd, pacifica electronics co., ltd, photoelectron dalian co., ltd, hyundai electronics dalian, rhi dalian co., ltd, yuanda pharmaceutical co., ltd, siemens vdo auto electronics changchun, toyota tianjin precise products co., ltd 6000, toyota zhangjiagang technology co., ltd, shenyang sico semiconductor co., ltd, dalian dongxian and dalian orient precise products co., ltd. dalian office will carry the principle make best design, provide satisfying service to provide our best service to the clients

    Edri大連分院成立至今完成120多項工程設計監理及工程總承包項目，其中多個項目工程設計獲得國家和部省級科技進步獎，先後完成了大連東福彩色液晶顯示器工程大連海爾工業園光洋軸承大連有限公司柯尼卡大連有限公司佳能辦公設備大連有限公司太平洋電子有限公司光電子大連有限公司現代電子大連有限公司奧鎂大連有限公司，大連高新生物制藥有限公司大連保稅區國際車城遠大制藥有限公司西門子威迪歐汽車電子長春有限公司豐田合成天津精密製品有限公司豐田合成張家港科技有限公司，沈陽科希-硅技半導體技術第一有限公司大連東顯電子有限公司大連東方精工有限公司等一大批高科技產業園區設計項目，並且進行全程質量跟蹤服務，在業內樹立起edri大連分院良好口碑，贏得了客戶廣泛好評，為我院在東北地區的發展做出了自己的貢獻。
  4. In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth

    本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。
  5. We all know that the output of ultraviolet ( uv ) laser mostly depends on the conversion of nonlinear frequency, thus a new kind of excellent nonlinear optics ( nlo ) crystal is very important for the output of new wavelength

    紫外波段激光的輸出主要採用頻率變換技術來實現，因此一種好的非線性光學晶體對于產生新的波長是非常重要的。
  6. Obtaining structure and function of proteins is one of the main purposes of research in biology, but determining three - dimensional structure of protein by means of x - rays crystallography and nuclear magnetic resonance spectroscopy, and research in protein structure by the way of biochemistry, already can ’ t adapt the need of the rapid increase of protein sequence

    獲取蛋白質的結構和功能是生物學研究的重要目的之一，但是使用x光晶體衍射和核磁共振技術等實驗手段測定蛋白質的三維結構，以及使用生物化學方法研究蛋白質的功能時效率不高，已經無法適應蛋白質序列飛速增長的需要。
  7. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  8. Based on the requirement of the device, we grow the films of silicon of high quality. the thickness of the epilayer is from 0. 4 u m tol p m, the doping concentration can be controlled conveniently

    然後，根據器件的要求，利用uhv cvd技術，生長出優質薄硅外延片，其厚度在0 . 4 m 1 m ，摻雜濃度可任意調節，晶體質量良好。
  9. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  10. - ray at room temperature got 40 %. the results show that the modified growth technique is a new and promising method for grow ing highly purity and perfect cdse single crystals, and by improving the technique of single crystals growth and fabricating process, the resolution of cdse detectors can be improved further

    晶體生長和探測器制備工藝技術是制備性能優異的探測器的基礎，因此，通過不斷改進晶體生長過程和探測器的制備工藝技術，可以制得低背景噪聲、性能穩定及能量解析度較高的cdse室溫核輻射探測器，這也是需要進一步研究和提高的地方。
  11. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。
  12. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  13. Sbn has currently being investigated as a potential material for many microdevice applications such as pyroelectric infrared detectors, electrooptic modulators, dram, etc. with the rapid development of the optical communication industry, especially the development of integrated optical devices, a successful hetero - epitaxial growth of the film on si substrate is necessary which can reduce loss in the waveguide effectively

    隨著光通訊產業的迅速發展，特別是集成光學的發展，迫切需要在硅襯底上生長擇優取向性好的鈮酸鍶鋇晶體，來有效地減少光在波導結構中的損耗。本論文探討了sbn薄膜的溶膠-凝膠（ sol - gel ）生長技術及其原理。
  14. In this paper, pmnt, pznt single crystals in the vicinity of the morphotropic phase boundary were obtained by high - temperature solution technique. the growth, structure and phase stability of single crystals were studied. the results are shown as follows : 1

    本論文採用高溫熔液法技術，對用高溫熔液法生長弛豫鐵電單晶材料工藝進行了研究，成功地制備出準同型相界附近的pmnt 、 pznt單晶材料，分析了晶體形成、晶體結構及其相結構穩定性，並對生長機理作了初步探索，主要研究結論如下： 1
  15. Progress of in - situ observation technique for crystal growth

    晶體生長實時觀測技術研究進展
  16. A kind of novel composite photocatalysts containing tio2 and tourmaline particles, such as tourmaline / tio2 composite photocatalysts and tourmaline / [ tio2, sio2 ] composite photocalysts, were fabricated mainly by the sol - gel technique, whose microstructure, photocatalystic activities and spontaneous polarization were investigated by the scanning electron microscope ( sem ), uv - visible spectro - photometer, etc. the novel porous composite films of tourmaline / tio2 were prepared from alkoxide solutions on the surface of copper by sol - gel method

    本工作利用電氣石礦物材料的天然電極性、輻射紅外線性能和tio _ 2的光催化性能，研製以電氣石為載體， tio _ 2薄膜和[ tio _ 2 ， sio _ 2 ]復合薄膜為催化劑的新型復合催化材料。研究材料的制備技術、結構、性能及電氣石表面tio _ 2晶體生長機理、電氣石增強tio _ 2光催化效率機理。
  17. In this thesis, some fundamental topics on p - sic crystal growth such as the design of the crucible assembling system, the thermal field distribution and the liquid phase epitaxial growth of p - sic films deposited on si have been discussed. in brief, following major creative results have been obtained : 1

    本文探索碳化硅晶體生長技術的若干基本問題，特別對熱系統的設計和熱場分佈問題，以及用- sic薄膜在碳飽和硅熔體中進行液相外延生長的基本工藝問題等進行了研究，獲得以下主要創新結果： 1
  18. The technical breakthroughs in growth of nd : cngg had been made. in particular, continuous laser operation was achieved from nd : cngg pumped by ld. when the crystal wafer was end - pumped by one bar of ld with 807nm wavelength, the cw laser output power of 123. 1 mw was obtained with slope efficiency of 22. 3 %

    本論文用自動化熔體提拉技術成功生長出< 111 >方向的直徑25mm以上，長度80mm以上的平界面無核心nd : cngg單晶，確定了晶體結構和物相，測量了晶體的光譜性能，晶體消光比達到34db ，晶體生長技術有新的突破，實現了連續激光運轉，用單支807nm半導體激光二極體端面泵浦該晶體片子，在國內首次獲得123 . 1mw的1 . 062 m連續激光輸出，斜效率達22 . 3 % 。
  19. Growth techniques for lead - based relaxor ferroelectric crystals

    鉛基弛豫鐵電單晶體的生長技術
分享友人
分享到 Line

分享到臉書