晶體生長機理 的英文怎麼說

中文拼音 [jīngtǐshēngzhǎngjīlǐ]
晶體生長機理 英文
mechanism of crystal growth
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 機 : machineengine
  • 理 : Ⅰ名詞1 （物質組織的條紋） texture; grain （in wood skin etc ） 2 （道理;事理） reason; logic; tru...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  • 機理 : mechanisation; mechanization; mechanism
  1. This paper has emulated the complex process of bioceramic " s degradation by using the computer simulation technique and studying the principle of material " s degradation, and combining the grain growing model with material degradation model

    本文利用計算機模擬技術，在深入研究了生物陶瓷體內降解機理的基礎上，將晶粒長大模型和材料降解模型有機結合，用於模擬生物陶瓷的降解過程。
  2. Based on the crystal growth elementary principle, a plagioclase crystalline velocity equation is suggested

    從晶體生長的基本原理出發，提出了按非連續機制生長的斜長石晶體結晶速率表達式。
  3. In the dissertation, different soft - templates were used to regulate and control the growth progress of calcium carbonate under present conditions in our lab. versatile morphologies and different polymorph of calcium carbonate were produced in our experiences, and the mechanisms of these results were investigated

    本論文是在實驗室的條件下，利用多種軟模板調控碳酸鈣晶體的生長，研究了導致晶體結晶狀態和形貌的多樣性機理，現歸納如下： 1
  4. Processing and growth mechanism of al - doped rutile single crystal by flame fusion method

    單晶體焰熔法生長實驗及機理
  5. Scientific computing study on growth mechanism of spinel

    尖晶石晶體生長機理的科學計算研究
  6. Abstract : while we were analyzing the proposed theory about the crystal growth, we doubted that the interface phase existed in the process of crystal growth. with this, we had looked for a lot of references connected and analyzed them. we find that the interface - phase does exist in the process of crystal growth and takes a critic role. therefore, we divide the interface - phase into three co - relative parts : interface layer, adsorptive layer and transitive layer. base on the above ideal, we demonstrate the role of interface layer, adsorptive layer and transitive layer in the process of crystal growth respectively. furthermore, we proposal the interface - phase model about the crystal growth

    文摘:在分析前人的晶體生長理論時，作者認為晶體生長過程中可能存在界面相；在分析各種晶體生長現象后認為，晶體生長過程中界面相是存在的，並起著十分重要的作用；通過分析研究，將晶體生長過程中的界面相劃分為3個有機的組成部分：界面層、吸附層和過渡層；並進一步論述了界面層、吸附層和過渡層在晶體生長過程中的地位與作用；在此基礎上提出了界面相模型。
  7. The paper also analyzed the crystal defeat formed in the process of growth and put forward to the solution, furthermore, the mechanism of needle - like growth was discussed

    並對晶須生長過程中所形成的各種晶體缺陷進行了分析，提出了解決辦法。同時對羥基磷灰石晶須針狀生長的結晶學和界面動力學機理進行了探討。
  8. With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models

    熱力學理論和方法已足以獲得準確的相平衡關系；然而即使對于簡單的二元物系的結晶過程，晶核形成和晶體生長動力學的研究仍面臨許多困難，通常採用經驗模型表述，而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵，因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。
  9. By means of sem, tem, laser scattered particle analyzer, etc., the formation mechanism of ultrafine sio2 particle was studied. it was found that at the initial stage, the sio2 particle consisted of some minicrystal, but after the initial stage the sio2 particle was formed by some soluble aggregated substance growing on the surface of the early particle

    運用掃描電鏡、透射電鏡、激光粒度分析儀等檢測手段，探討了體系中超細二氧化硅顆粒的形成機理和過程，指出超細二氧化硅粒子前期是由體系中的微晶核組成，中後期則由體系中的可溶性縮合物在其表面生長而成。
  10. Abstract : the defects such as inclusion, splitting, dislocation and dendrite in the pbxla1 - x ( zry tiz sn1 - y - z ) o3 ( plzst ) single crystal grown from pbo - pbf2 flux by the slow cooling self - seeding technique were discussed in this paper. the forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed

    文摘:本文介紹了助熔劑緩慢降溫自發成核法生長的稀土摻雜鋯鈦錫酸鉛鑭（ plzst ）晶體中出現的幾種缺陷：包裹體、開裂、位錯、枝晶，分析了這些缺陷的形成機理並提出了減少和消除這些缺陷的一些措施。
  11. Summary on the growth mechanism of crystal

    晶體生長機理的研究綜述
  12. Preliminary study on the evaluation system of digital libraries

    外延晶體學位相關系和生長機理研究
  13. In addition, the growth mechanism on porous silicon has been discussed in view of growth kinetics

    從晶體生長動力學角度分析了多孔硅上外延硅的生長機理。
  14. In this paper, the present situation and development of the research on growth mechanism of crystal are also discussed

    對晶體生長機理的研究現狀和發展趨勢予以了討論。
  15. Crystal morphology and growth mechanism of sphalerite crystallites were studied by formulating the mathematical model and calculating the stability energy of the growth units on the basis of the theoretical model that the growth units are polyhedral structure of coordinative anions

    摘要本文從負離子配位多面體生長基元模型出發，建立了閃鋅礦晶體生長基元的數學模型，通過對閃鋅礦晶體生長基元穩定能的計算，討論了閃鋅礦的結晶形態和生長機理。
  16. In chapter 2, not only some concrete prob1ems about the three - dimensional simulation model of ceramic grain growth such as the received forces of the ions in the grain, random orientation of grans and boundaxy problem, but also the design and development of simulation software are discussed

    第二章陶瓷晶粒生長模擬的三維擴展：從二維模擬模型出發，討論三維模擬模型擴展的一些具體問題如離子的受力情況、晶粒的隨機取向和邊界處理問題，最後詳細介紹三維模擬軟體的設計和實現。
  17. In this paper, pmnt, pznt single crystals in the vicinity of the morphotropic phase boundary were obtained by high - temperature solution technique. the growth, structure and phase stability of single crystals were studied. the results are shown as follows : 1

    本論文採用高溫熔液法技術，對用高溫熔液法生長弛豫鐵電單晶材料工藝進行了研究，成功地制備出準同型相界附近的pmnt 、 pznt單晶材料，分析了晶體形成、晶體結構及其相結構穩定性，並對生長機理作了初步探索，主要研究結論如下： 1
  18. A kind of novel composite photocatalysts containing tio2 and tourmaline particles, such as tourmaline / tio2 composite photocatalysts and tourmaline / [ tio2, sio2 ] composite photocalysts, were fabricated mainly by the sol - gel technique, whose microstructure, photocatalystic activities and spontaneous polarization were investigated by the scanning electron microscope ( sem ), uv - visible spectro - photometer, etc. the novel porous composite films of tourmaline / tio2 were prepared from alkoxide solutions on the surface of copper by sol - gel method

    本工作利用電氣石礦物材料的天然電極性、輻射紅外線性能和tio _ 2的光催化性能，研製以電氣石為載體， tio _ 2薄膜和[ tio _ 2 ， sio _ 2 ]復合薄膜為催化劑的新型復合催化材料。研究材料的制備技術、結構、性能及電氣石表面tio _ 2晶體生長機理、電氣石增強tio _ 2光催化效率機理。
  19. The study on the structure and micromorphology of two znse monocrystal indicated that the growth mechanism of znse monocrystal via vapor is two - dimension nucleation and growth, and ( 111 ) face is the mainly appearing face. the results provide an important experimental evidence for the growth theory of singular face. ultrafast nonlinear optical properties of as - grown znse single crystals were investigated by femtosecond pulses

    兩種方法生長znse體單晶的結構和形貌研究表明，在輸運劑zn伽場） 3c15的存在和本文實驗條件下， cvt氣相生長znse的機理主要為二維成核與生長機理， （ 111 ）面為主要生長晶面，該結果為立方晶體的奇異面生長理論提供了重要的實驗證據。
  20. In this study, we discussed the drive force and mechanism of growing ktp crystal, studied the influence of doping elements on the habits of crystal growth, described and explained its morphology

    本文討論了ktp晶體生長的驅動力和生長機制，研究了摻質對ktp晶體生長習性的影響，並對其形貌進行了描述和理論上的解釋。
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