晶體生長理論 的英文怎麼說

中文拼音 [jīngtǐshēngzhǎnglǐlún]
晶體生長理論 英文
theories of crystal growth
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 理 : Ⅰ名詞1 （物質組織的條紋） texture; grain （in wood skin etc ） 2 （道理;事理） reason; logic; tru...
  • 論 : 論名詞（記錄孔子及其門徒的言行的「論語」） the analects of confucius
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  • 理論 : theory
  1. Studies on the preparation of aragonite whisker and its growth mechanism are meaningful at theory and practice to develop traditional calcium carbonate industry, new materials and theory of crystal growth

    制備文石相碳酸鈣晶須的研究對促進我國傳統碳酸鈣產業、新材料的開發以及晶體生長理論的發展都具有重要的理論意義和實踐意義。
  2. In the dissertation, different soft - templates were used to regulate and control the growth progress of calcium carbonate under present conditions in our lab. versatile morphologies and different polymorph of calcium carbonate were produced in our experiences, and the mechanisms of these results were investigated

    本論文是在實驗室的條件下，利用多種軟模板調控碳酸鈣晶體的生長，研究了導致晶體結晶狀態和形貌的多樣性機理，現歸納如下： 1
  3. Abstract : while we were analyzing the proposed theory about the crystal growth, we doubted that the interface phase existed in the process of crystal growth. with this, we had looked for a lot of references connected and analyzed them. we find that the interface - phase does exist in the process of crystal growth and takes a critic role. therefore, we divide the interface - phase into three co - relative parts : interface layer, adsorptive layer and transitive layer. base on the above ideal, we demonstrate the role of interface layer, adsorptive layer and transitive layer in the process of crystal growth respectively. furthermore, we proposal the interface - phase model about the crystal growth

    文摘:在分析前人的晶體生長理論時，作者認為晶體生長過程中可能存在界面相；在分析各種晶體生長現象后認為，晶體生長過程中界面相是存在的，並起著十分重要的作用；通過分析研究，將晶體生長過程中的界面相劃分為3個有機的組成部分：界面層、吸附層和過渡層；並進一步論述了界面層、吸附層和過渡層在晶體生長過程中的地位與作用；在此基礎上提出了界面相模型。
  4. With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models

    熱力學理論和方法已足以獲得準確的相平衡關系；然而即使對于簡單的二元物系的結晶過程，晶核形成和晶體生長動力學的研究仍面臨許多困難，通常採用經驗模型表述，而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵，因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。
  5. The influence of nano - al2o3 on the sintering and the properties of the si3n4 ceramics was researched in this paper. the samples with different amount of nano - al2o3 were obtained by using pressureless sintering at 1600, 1650, 1700 in the nitrogen atmosphere. the microstructure and the composition of the ceramics were determined by the means of x - ray, sem, micro - hardness meter etc. it is show that the sisty ceramics can be densified at 1650c to % percent of the theory density through the addition of nano - al2o3 ( the value could be 90 percent by other technique ). the crystalline growth of the cylindrical - si3n4 and the ratio of its longitude to its diameter are increased with the addition of nano - al2o3. a uniform microstructure and an fined crystal as well as more sialon phases can be obtained in the si3n4 ceramics through the addition of that

    實驗結果表明：在碳管爐中、氮氣保護下進行燒結，添加劑為納米al _ 2o _ 3粉末時，由於納米粉末的高活性、高燒結驅動力，在1650就可使si _ 3n _ 4完全地燒結，並使其緻密度可達理論密度的96以上（比其它工藝高6左右） ；同時，納米al _ 2o _ 3地加入大大促進了長柱狀? si _ 3n _ 4的生長和發育及柱狀晶長徑比的提高，使微觀結構均勻、細化，形成了更多力學性能優異的固體? sialon相，減少了不利於陶瓷材料性能的晶間玻璃相，凈化了晶界。
  6. In this paper, the present situation and development of the research on growth mechanism of crystal are also discussed

    對晶體生長機理的研究現狀和發展趨勢予以了討論。
  7. Crystal morphology and growth mechanism of sphalerite crystallites were studied by formulating the mathematical model and calculating the stability energy of the growth units on the basis of the theoretical model that the growth units are polyhedral structure of coordinative anions

    摘要本文從負離子配位多面體生長基元模型出發，建立了閃鋅礦晶體生長基元的數學模型，通過對閃鋅礦晶體生長基元穩定能的計算，討論了閃鋅礦的結晶形態和生長機理。
  8. In chapter 2, not only some concrete prob1ems about the three - dimensional simulation model of ceramic grain growth such as the received forces of the ions in the grain, random orientation of grans and boundaxy problem, but also the design and development of simulation software are discussed

    第二章陶瓷晶粒生長模擬的三維擴展：從二維模擬模型出發，討論三維模擬模型擴展的一些具體問題如離子的受力情況、晶粒的隨機取向和邊界處理問題，最後詳細介紹三維模擬軟體的設計和實現。
  9. The analyses given in this paper to quasi - three - level for 946 nm laser are complete. the relation between 946 nm laser transmission and optimal crystal length has been derived from the rate equations describing the population inversion and the photon density in the laser cavity in the steady - state case. the minimal claims to coating have been given on the base of contrasting 946 nm transmission with 1064 nm transmission in the condition of different cavity losses and how the pump beam radius in the laser crystal and optimal crystal length affect the laser threshold and output power of 946 nm laser has been given as well

    對產生946nm譜線的準三能級結構給出了較為完整的分析，利用激光諧振腔處于穩態時的速率方程，導出了準三能級nd ： yag946nm起振時，透射損耗與最佳激光晶體長度的關系，在與1064nm透射損耗相比較的基礎上，給出了不同的腔損耗情況下的最低鍍膜要求，並且給出了激光閾值、輸出功率和最佳激光晶體長度及泵光光斑大小的關系，這為設計室溫下高效運轉的946nm激光器的提供了理論基礎，這種分析方法對研究此類低增益，準三能級或三能級激光系統輸出特性有借鑒意義。
  10. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  11. The theoretical calculation and explanation of strain behavior during heteroepitaxy of oxides thin films : when the lattice mismatch is relative small ( for example, batio _ 3 / srtio _ 3 with a lattice mismatch of 2. 18 % ), the growth mode of thin films is layer - by - layer, and the critical thickness and strain relaxation can be calculated or estimated by matthews - blakeslee expressions ; when the lattice mismatch is large ( for example mgo / srtio _ 3 with lattice mismatch of 8 % ), the strain relaxation process can be explained by theory of coherent strained islands

    氧化物薄膜異質外延應變行為的理論預測和解釋。對于晶格失配較小的外延體系（如batio3 / srtio _ 3 2 . 18 % ） ，薄膜以層狀方式進行生長，臨界厚度和應變釋放過程可以用經典的matthews - blakeslee公式進行預測;對于晶格失配較大的體系（如mgo / srtio _ 3 8 % ） ，薄膜以島狀方式進行生長，應變釋放過程可以由彈性應變島的理論體系進行解釋。
  12. Sbn has currently being investigated as a potential material for many microdevice applications such as pyroelectric infrared detectors, electrooptic modulators, dram, etc. with the rapid development of the optical communication industry, especially the development of integrated optical devices, a successful hetero - epitaxial growth of the film on si substrate is necessary which can reduce loss in the waveguide effectively

    隨著光通訊產業的迅速發展，特別是集成光學的發展，迫切需要在硅襯底上生長擇優取向性好的鈮酸鍶鋇晶體，來有效地減少光在波導結構中的損耗。本論文探討了sbn薄膜的溶膠-凝膠（ sol - gel ）生長技術及其原理。
  13. Based on the theory of crystal growth, we realized effective control on the crystallizing process of nickel hydroxide by coordinate precipitation method

    本文在晶體生長理論的基礎上，採用配位沉澱法實現了對ni （ oh ） _ 2結晶過程的有效控制。
  14. This article give some suggestion about mass - production of sapphire and china broad company becoming one of the largest production base in asia. it includes management experience, analysis about the market and the competitors and strategy about the future of the company. it gives strong support of the necessacity and fiseabilty of the project

    本文以項目建議書的形式，對華博公司擴大生產規模並建成亞洲最大的藍寶石晶體生長和加工基地進行充分的論證，既有對公司優勢劣勢的評估和公司建成兩年多來經營和管理經驗的總結，也有對國際和國內的市場情況、競爭對手的分析，更有對公司未來經營戰略的闡述。
  15. The study on the structure and micromorphology of two znse monocrystal indicated that the growth mechanism of znse monocrystal via vapor is two - dimension nucleation and growth, and ( 111 ) face is the mainly appearing face. the results provide an important experimental evidence for the growth theory of singular face. ultrafast nonlinear optical properties of as - grown znse single crystals were investigated by femtosecond pulses

    兩種方法生長znse體單晶的結構和形貌研究表明，在輸運劑zn伽場） 3c15的存在和本文實驗條件下， cvt氣相生長znse的機理主要為二維成核與生長機理， （ 111 ）面為主要生長晶面，該結果為立方晶體的奇異面生長理論提供了重要的實驗證據。
  16. The finite element method ( fe '. i ) is adopted to analyze the effects of the numbers of coil turns, current intensity and current frequency upon the rate of joule heat generation in details. the thermo - radiation analytical countermeasures of various types are adopted to carry out the numerical analysis of the effects of the crucible with different shapes and sizes and the blind holes with different depths opened in the tops of crucibles as well as coil positions upon the thermal field distribution whereby solving the main problem of field the thermo - field design of the induction - heating sic crystal growth system. a new combination idea of the thermo - field design obtained by means of the united design of the thermo - insulator and blind holes has been presented

    採用有限元分析方法對線圈匝數、電流強度、電流頻率等對焦耳熱產生速率的影響進行了詳細的分析討論；採用不同的熱輻射分析策略，對不同坩堝形狀、坩堝頂部開設不同深度的盲孔以及線圈的位置等對熱場分佈的影響進行了數值分析，解決了感應加熱碳化硅晶體生長系統熱場設計的主要問題，提出了通過絕熱層與盲孔的聯合設計獲得所需熱場設計的思路，給出了根據軸向溫度梯度的波動對線圈位置實行動態調節以控制熱場的理論依據。
  17. It shows that the interface energy and the heterogeneous nucleation barrier were changed by the doping of tb. so the relationship between crystal content and tb doped concentration can be " described as : y = 1 - exp ( k1 exp ( k cos ( ( x + ) 3 ) it shows that the crystal content will reach a maximum with increasing tb doped concentration because of the influence of heterogeneous nucleation barrier variation

    本文在分析界面能的基礎上，推導了在一定條件下薄膜受摻tb影響的鈣鈦礦相析晶含量的理論表達式為： y 1 yxp （ k ； xxp （ kcos （ s ? （ x a ） 』 ）該式表明了受體系成核界面能的變化影響，晶體生長受摻tb濃度影響出現極值。
  18. In this study, we discussed the drive force and mechanism of growing ktp crystal, studied the influence of doping elements on the habits of crystal growth, described and explained its morphology

    本文討論了ktp晶體生長的驅動力和生長機制，研究了摻質對ktp晶體生長習性的影響，並對其形貌進行了描述和理論上的解釋。
  19. The suitable temperature field, growth rate of the crystals and rotation rate were decided by a mount of experiment and theory analysis

    通過大量實驗並結合理論分析，設計了合適的溫場，適宜的提拉速度和旋轉速度等晶體生長的工藝參數。
  20. In this paper, a parallel - resonance induction heating power for equipments that used to grow laser crystal has been developed, it applies power electronics theory and adopts full - controllable electric semiconductor device igbt

    本文基於電力電子理論，採用全控型電力半導體器件igbt ，研製了適用於激光晶體生長設備的中頻感應加熱電源。
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