晶體界面 的英文怎麼說

中文拼音 [jīngtǐjièmiàn]
晶體界面 英文
crystal interface
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 界 : 名詞1 （相交的地方; 劃分的界限） boundary 2 （一定的范圍） scope; extent 3 （按職業、工作或性別等...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 界面 : [物理化學] interface; boundary; limiting surface
  1. Controlling solid - liquid interface configuration during crystal growth of cdznte by vertical bridgman method

    晶體時固液界面形狀的控制
  2. Z. zhang and w. geng, " direct observation of misfit dislocations at the interface between a decagonal quasicrystal and its epitaxial crystalline layers ", phil. mag. lett., 65 ( 1992 ) 211 - 218

    「十面體準晶與其表面晶體之間界面失配位錯的直接觀察」 ， ， （英國）
  3. Monitor apparatus can measure valid value of three phase voltage and current, power factor, three phase disequilibrium, instant flecker of short time and harmonic without twenty, degree and harmonic distortion total. the paper are laid on the following. ( 1 ) master plan and function of circuit, ( 2 ) hardware design including circuit and principle of a / d conversion, phase lock, liquid crystal display and keystroke and so on, ( 3 ) design of system software including digital filtering, fft, a / d conversion and monitor interface of pc, ( 4 ) system test

    監測儀能夠完成包括三相電壓、三相電流的有效值、功率因數、三相不平衡、電壓短期閃變、以及20次內的諧波、諧波相位、諧波失真總量等的測量。論文重點介紹了以下幾部分： （ 1 ）電路的總體設計和功能； （ 2 ）硬體設計，包括a d轉換、鎖相環、液晶顯示和按鍵輸入等原理和電路。 （ 3 ）系統軟體設計，包括a d轉換、 fft 、數字濾波等程序的原理和演算法以及上位機監控界面的設計； （ 4 ）系統測試。
  4. Having added super fine li2ni8o10 crystals to enamel as mill addition, the morphology of enamel interface and cross section was observed by metalloscope and sem

    摘要將超細鎳酸鋰晶體磨加在搪瓷釉中，通過金相顯微鏡和電子顯微鏡觀察搪瓷界面及橫截面的顯微形貌。
  5. In this paper, oxid crystals were synthesized by the hydrothermal method, and the effects of the hydrothermal condition on shape and quality of crystal were studied by changing experimental temperature and mineralizer. on the base of these works the blue sapphire dopped with fe, ti and sapphire dopped with ti were synthesized. meantime, the effects of ti, fe - dopped on sapphire and what lead to the blue of sapphire were studied

    本文採用水熱法合成了- al _ 2o _ 3和zno晶體，通過改變溫度和礦化劑條件研究了水熱條件下溫度和礦化劑對- al _ 2o _ 3和zno晶體合成的影響；在此基礎上通過摻雜致色元素，合成了藍色藍寶石、鈦藍寶石，並研究了fe 、 ti等致色離子對藍寶石晶體界面形態和質量的影響，分析了藍寶石的致色原因。
  6. In the hardware design, the paper completes modules ’ design like outside memory, patulous a / d, patulous d / a, rs232 communication, ecan communication, led control, keyboard control, distant control, emulation, reset, logic voltage switch, dsp supply power regulate and ac - dc power circuit, as well as room layout design like anterior panel, back panel etc. and dsp transfers data with peripheral equipments except outside memory using serial ports. besides, the whole circuit is configured in interrupt response. thus, it can meet system demand as well as take full advantage of tms320f2812 ’ s hardware resource. in the software design, the paper finishs programs like the interface programms intercommunicates with people, the distant control program, ad and da modules ’ control program, in addition, the paper select the velocity and acceleration state - feedback algorithm and is written in the program. the software design uses dsp integrate exploiting environment named ccs2. 2 of ti inc. as software instrument, and programs with the combination of c language and assembly language. moreover, in order to maintenance or modify the software expediently and shorten software ’ s exploitation time, the design adopt software modularization technique. finally, some air cylinder experiments are carried out to proved that the pneumatic controller is very practical

    在硬體設計中，本文完成了片外存儲器擴展、 a / d擴展、 d / a擴展、 rs232通信介面、 ecan通信總線介面、液晶顯示控制、鍵盤控制、遠程控制、模擬、復位、邏輯電平轉換、 dsp工作電源校正電路和ac - dc電源等模塊設計以及控制器前面板、後面板等的空間布局設計。其中dsp與除外部存儲器的外圍設備之間的數據傳送全部採用串口通信，同時系統電路配置成中斷響應方式，這樣既滿足了系統要求，又充分利用了tms320f2812的硬體資源。在軟體設計中，本文完成了人機界面功能模塊、遠程控制模塊、 ad擴展模塊、 da擴展模塊、速度和加速度狀態反饋的控制演算法的程序設計。
  7. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  8. The coefficients of reflection and transmission on the interface of two uniaxial crystals

    光在兩單軸晶體分界面的反射與透射系數
  9. The coefficients of reflection and transmission on the interface of two uniaxial crystals under normal incidence

    正入射條件下光在兩單軸晶體分界面的反射與透射系數
  10. The most achievement is that we firstly obtain the analytic accurate solution of the modal fields of the waveguide structure and find some available character : ( 1 ) the different uniaxial crystal materials have the different propagation properties ; ( 2 ) when the optical axis of the crystal is on the plane that is made up of the normal direction of the waveguide plane and the propagation, there are te mode and tm mode in this special waveguide, but the principal mode is different of the character of the uniaxial crystal, the principal mode is the principal mode of te mode for the negative uniaxial crystal, but the one of tm mode for the positive uniaxial crystal ; ( 3 ) when the crystal optical - axis parallel to the waveguide plane, for the positive uniaxial crystal material, the principal mode of the waveguide is a te wave, which can be excited by the light at any frequency ; when the light frequency satisfies a single mode propagation condition, there will be only the principal mode propagating in the waveguide, otherwise some of the higher order modes can be excited, which are neither te modes, nor tm modes, but the hybrid guided modes

    本文就是在此背景下，利用金屬波導和單軸晶體的一些特性，結合麥克斯韋方程組和波導的邊界條件，從三種不同的情況研究了光在對稱平面單軸晶體金屬波導（波導層是單軸晶體，兩個波導界面均為金屬）內的傳輸特性，其主要貢獻為，首次解析地得到了這種波導結構下模式場的精確解，並發現了一些有用的特性： （ 1 ）模式場的性質因單軸晶體的性質不同而異； （ 2 ）當單軸晶體光軸位於波導界面法方向與傳輸方向構成的平面內時，波導中傳輸te波和tm波，只不過其主模因單軸晶體的性質不同而異，當波導層介質為負單軸晶體時，波導主模是te波主模，而波導層介質為正單軸晶體時波導主模是tm波主模。 （ 3 ）當單軸晶體光軸位於波導面內時，對于正單軸晶體，波導的主模是橫電波te _ 0模，任何頻率的光波均可激勵該模式；當光波波長滿足一定條件時，波導內傳輸單模，否則，將激勵起高階模式，高階模即匪te波，也匪tm波，而是兩者耦合而成的混合模。
  11. As the action of the solid bounding surface is strong enough, the surface polar ordering is almost independent of temperature and unaffected by the phase transitions in the bulk of the nlcs

    當基板的表面作用較強時，界面第一分子層的極性序幾乎獨立於溫度，不受體液晶相變影響。
  12. In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers

    本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。
  13. A patch antenna with etched holes on the ground plane is also studied. the performance of the antenna at the resonant frequency is analyzed by using the fdtd method together with the pml boundary treatment. the results show that the surface waves are suppressed greatly, the bandwidth is improved and a 1 odb reduction on the sidelobe level is achieved at the 110 and 260 directions in the e plane

    全面地研究了地面腐蝕周期圓孔結構的電磁晶體貼片天線在基波頻率處的性能，用fdtd方法並結合pml邊界處理技術對該天線所取得的研究結果顯示，本文設計的地面腐蝕型電磁晶體結構抑制了貼片天線中的表面波，增加了天線的帶寬，並有效地削弱了旁瓣，使天線的e面方向圖上110和260方向的兩個旁瓣被削弱了10db 。
  14. Bai shi new development over the years, the company ' s products are mainly trade sales world - renowned brands ; has formed a production and supply of quartz crystal and ceramic capacitors, thick film resistors based serial production lines. main products include : plug posted quartz crystal surface, the surface of quartz crystals and crystal oscillators, posted plug surface, quartz oscillator vco, stickers and vco plug - round version of ceramic capacitors and vertical and horizontal layer ceramic capacitors, chip resistors and resistor ranked / exclusion order and capacitance / second polar body / mixed network

    新佰仕經過多年的發展，公司貿易的產品主要銷售世界知名品牌電子元器件；現已形成了以生產及供應石英晶體?陶瓷電容器?厚膜電阻器為主的系列化產品生產線，主要產品包括：表面貼石英晶體?插件石英晶體?表面貼石英振蕩器?插件石英振蕩器?表面貼壓控振蕩器?插件壓控振蕩器?圓版型陶瓷電容?立式與臥式積層陶瓷電容?排列電阻器?晶元電阻/排阻?排列電容/二極體/混合網路。
  15. The macroscopic defects such as twins, small - cracking, scattering particles, growth layer and cores are examined ; they are related with the temperature difference between gas and melt : the twins and small - cracking come out when the difference is large, the bubbles and scattering particles come out when that is small

    觀察到了孿晶、裂隙、雲層、生長層和核心等宏觀缺陷，晶體的這些宏觀缺陷與氣- -液界面溫差有較大關系：溫差大容易造成孿晶、裂隙等缺陷；溫差小容易造成氣泡、散射顆粒等缺陷。
  16. Abstract : while we were analyzing the proposed theory about the crystal growth, we doubted that the interface phase existed in the process of crystal growth. with this, we had looked for a lot of references connected and analyzed them. we find that the interface - phase does exist in the process of crystal growth and takes a critic role. therefore, we divide the interface - phase into three co - relative parts : interface layer, adsorptive layer and transitive layer. base on the above ideal, we demonstrate the role of interface layer, adsorptive layer and transitive layer in the process of crystal growth respectively. furthermore, we proposal the interface - phase model about the crystal growth

    文摘:在分析前人的晶體生長理論時，作者認為晶體生長過程中可能存在界面相；在分析各種晶體生長現象后認為，晶體生長過程中界面相是存在的，並起著十分重要的作用；通過分析研究，將晶體生長過程中的界面相劃分為3個有機的組成部分：界面層、吸附層和過渡層；並進一步論述了界面層、吸附層和過渡層在晶體生長過程中的地位與作用；在此基礎上提出了界面相模型。
  17. We have developed the theory of boundary shielding approximation of electric polarization, from which the values of spontaneous polarization of some typical ferroelectric materials can be derived. the shielded charges in ferroelectricity are in the state of surface bound polaron - dipole whose creation and annihilation must span a potential barrier. by introducing statistical method, four types of typical electric hysteresis loops of some common crystals and ceramics have been given, which are well consistent with the experimental results

    利用電極化的邊界屏蔽近似，可計算出一些典型鐵電單晶的自發極化強度.鐵電屏蔽電荷處于表面束縛極化子偶狀態，其產生和湮沒要跨越位壘.由統計方法給出的一些常見晶體和陶瓷的四種典型電滯回線形狀，和實驗觀察到的結果一致
  18. Abstract : the affects of crystal absorption for heat radiation on crystal growth, which include : the heat loss of the hot grower, the chara - cteristic of temperature - time of crystal growth, the pattern of fluid flow and the shape of interface, the interface inversion of crystal, the temperature distribution and the thermal stress distribution, are reviewed in this paper

    文摘:本文綜述了晶體對熔體熱輻射吸收對晶體生長的影響，包括對熱腔熱耗散的影響；對晶體生長溫度時間特性的影響；對液流形態和固液界面形狀的影響；對晶體界面反轉的影響；對晶體中溫度分佈和應力分佈的影響。
  19. The structure and properties of interfacial region of liquid crystals ( i. e the layers adjacent to a solid walls ) are obviously affected by the solid walls. therefore, the investigations of interface properties of liquid crystals have significance of theory and extensive prospect of application in this paper, the molecular field theory and a two - particle cluster theory are presented to study thin nematic liquid crystal films confined by two type solid substrates, respectively

    目前液晶被廣泛用於光電顯示器中，固體界面對液晶界面層（鄰近基板表面的液晶層）的結構、性質有較大的影響，因此，對液晶與固體表面間的界面物理性質和規律研究，具有重要的理論意義和廣闊的應用前景。
  20. Study on the stress of dlc mct interface by finite element method

    晶體界面應力的有限元分析
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