晶體管中 的英文怎麼說

中文拼音 [jīngtǐguǎnzhōng]
晶體管中 英文
npn
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The concepts described above are embodied in the junction transistor.

    上述各種概念都反映在結型晶體管中。
  2. To achieve the high impedance required specially designed "electrometer" vacuum tubes, field effect transistor must be used in the input stage.

    為適應高阻抗需要，儀器輸入電路中須用特殊設計的靜電計專用電子管、場效應晶體管。
  3. Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ). in this paper, some means to harden the devices against these phenomena are used. guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup

    在本文設計中，採用雙環保護結構，大大的降低了cmos集成電路對單粒子閂鎖效應的敏感性；對nmos管採用環型柵結構代替傳統的雙邊器件結構，消除了輻射感生邊緣寄生晶體管漏電效應；採用附加晶體管的冗餘鎖存結構，減輕了單粒子翻轉效應的影響。
  4. The course concentrates on circuits using the bipolar junction transistor, but the techniques that are studied can be equally applied to circuits using jfets, mosfets, mesfets, future exotic devices, or even vacuum tubes

    本課程集中講解使用雙極結晶體管的電路，但所學技術同樣適用於使用jfet ， mosfet ， mesfet ，未來的稀有裝置，甚至真空管的電路。
  5. The very first power1 was actually several chips on a single motherboard ; this was soon refined down to one rsc risc single chip with more than a million transistors

    最初的power1晶元實際上是在一個主板上的幾個晶元；后來很快就變成一個rsc （ risc單一晶元） ，其中集成了100多萬個晶體管。
  6. In the case of layout design, discussed the effect and application of the transistor matching in the circuits design deeply. demonstrated the circuit layout check by lvs design

    在電路的版圖設計方面，較深入地討論了晶體管的匹配在電路版圖設計中的作用和應用，通過lvs對電路的版圖檢查進行了具體說明。
  7. The design and analysis of vertical pnp transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain, rate of surface combination and leakage current, carriers lifetime of epitaxy layer and switch speed

    從外延層載流子壽命與晶體管放大倍數，表面復合率與漏電流，以及外延層載流子壽命與晶體管開關速度等方面對于輸出級縱向pnp管進行了較為詳細的設計與分析，達到了電路中對輸出級縱向pnp管主要參數指標的要求。
  8. If you don ' t want a high bandwidth transistor to oscillate place lossy components in at least 2 of the 3 leads. ferrite beads work well

    如果你不想通過在高帶寬晶體管三個引腳中的至少兩個引腳放置損耗元件的方法消除振蕩。鐵氧體磁珠會起到很好的作用。
  9. During this precess, using the technology of optimizing the widths of both common source mosfet and common gate mosfet under a fixed power, we obtained a compromised result of power consumption and noise figure

    設計過程中，在限定功耗的前提下，主要針對共源晶體管和共柵晶體管的柵寬，對電路的性能進行了優化，使得設計的lna的噪聲系數最小。
  10. In order to drive the lcd with high resolution and improve the displaying quality, people designed a tft ( thin - film transistor ) on every pixel of lcd to control display pixels independently

    而在高解析度的液晶顯示器中，為了提高顯示畫面的質量。人們在每個顯示像素上設計了一個非線性的有源薄膜晶體管（ tft thinfilmtransistor ）來對每一個液晶像素進行獨立驅動。
  11. Additional noise contributions are due to the statistical fluctuations of the processes in the valves and transistors.

    其他噪聲的產生來自電子管和晶體管中電過程的統計起伏。
  12. In the second generation of computers, transistors replaced vacuum tubes

    在第二代計算機中，晶體管取代了真空管。
  13. Based on many other circuit formats, a new kind of logic - level circuit representation, called unified middle - level circuit format ( umcf ), is defined in this paper, in which some special operations on circuit related with power estimation and low power design. umcf can not only interchange circuits of different formats, but also convert circuits to hspice acceptable files, which can be used for transistor level power estimation

    本文結合多種不同的電路格式，自主定義了一種邏輯級電路的中間表示形式（稱為umcf ）和一系列極具特色的與低功耗技術相關的操作，它不但可以實現與其他多種電路格式之間的相互轉換，還可以將電路直接轉換成hspice可以接受的文件，進行晶體管級的電路功耗估計，這樣可以在公認的高精度的功耗模擬器上，對本文的結果進行有效的驗證。
  14. It is found that the height of the metal electrode, the distance between the source and drain electrodes, the thickness of the sio

    研究了場效應納電子晶體管構造過程中金屬電極的結構設計，源-漏電極高度sio
  15. It is found that the current amplification coefficient strongly depends on the spin polarization of the electrons injected from the emitter to the base, the spin relaxation time and the width of the base

    自旋晶體管中的電流放大系數主要取決于注入基區的自旋極化電子的極化程度，基區中自旋的馳豫時間及基區的寬度。
  16. Magnetoresistance effect of double - barrier magnetic tunneling junction applied in spin transistors

    雙勢壘磁性隧道結的磁電阻效應及其在自旋晶體管中的應用
  17. The test indicated that one transistor in every ten was out of order

    試驗表明，每十隻晶體管中有一隻是壞的
  18. In a bipolar transistor, the control area or the electrical connection to the control area

    在雙極晶體管中，指控制區域或和控制區相連的導電連接。
  19. In the transistor, the output current depends on the input current, hence it is a current - operated device

    在晶體管中，輸出電流依賴于輸入的電流，因此它是一個電流控制器件。
  20. The electrical current can be supplied without any affection to the transistor ( for the use of el pixels and signal line ), which in the semiconductor equipment

    提供一種半導體裝置，在向負載（ el像素及信號線）供給電流的晶體管中，可以不受偏差的影響供給正確的電流。
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