晶體管基極 的英文怎麼說

中文拼音 [jīngtǐguǎnjījí]
晶體管基極 英文
transistor base
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less

    在國內， gan基微電子器件的研究剛開始起步，制備gan分立器件的工藝尚處于探索研究階段，特別是受algan gan二維電子氣材料來源的限制，國內algan gan基的場效應晶體管的研究開展得較少，關于肖特基整流二極體的研究更少。
  2. Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors

    現代電壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結場效應晶體管。
  3. Mainly for capacitance, semiconductor, jingzhen, resistance, ic chips, jiechajian procedures, connecting pieces, switching devices, silicon, triode, diode, piezoelectric ceramic base films, tubes, electron tubes, electronic stamping, precision metal parts, production processes between cleansing processes

    晶元接插件連接件轉接器矽片三極體二極體壓電陶瓷基片顯象管電真空器件等內精密電子沖壓五金零件，生產加工過程工序間的清洗。
  4. It is found that the current amplification coefficient strongly depends on the spin polarization of the electrons injected from the emitter to the base, the spin relaxation time and the width of the base

    自旋晶體管中的電流放大系數主要取決于注入基區的自旋極化電子的極化程度，基區中自旋的馳豫時間及基區的寬度。
  5. Eventually, around the cusp of the 1980s and 90s, the relentless march of miniaturization approached sizes so small that the larger area of the slower fet - based chips could be filled with enough transistors to whomp the performance superiority of the bipolar model

    在20世紀80年代和90年代的早期，晶元的小型化已經使得晶元的尺寸非常之小，以至於更小的基於fet的晶元上可以留出更多的空間，可以放置更多的晶體管，從而實現遠遠高出二極體模型的性能。
  6. At low frequencies, the current in the collector of a transistor is in phase with the applied current at the base

    在低頻段，晶體管的集電極電流與施加在基級的電流同相。
  7. We ' ve seen already how maintaining a constant base current through an active transistor results in the regulation of collector current, according to the ratio

    我們已經看到有源晶體管的恆定的基極電流是如何以系數控制集電極電流的。
  8. Transistor base current

    晶體管基極電流
  9. We bring forward a new base - poll driving method for gigantic transistors in h - type pwm converter and by adopting pwm method, successfully complete rotate speed controlling for the walking electromotor

    提出了一種新的適合於低精度直流調速的h型pwm變換器功率晶體管基極驅動方式，採用pwm方式成功實現了對機器人行走電機的速度控制。
  10. Small signal bipolars with b - c tied together will also make nice low - leakage diodes

    連接基極-集電極的小信號雙極性晶體管也可以作為不錯的低漏電流二極體。
  11. A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy. the sige hbt

    室溫下該晶體管的直流電流增益為30到50 ，基極開路下，收集極-發射極反向擊穿電壓
  12. Hvdc light is a kind of new dc transmission technology developed from the traditional hvdc, with voltage source converter ( vsc ) and igbt as main components. the basic principles of vsvpwm are studied, and an approach to simulate vsvpwm based on pscad / emtdc is put forward in this thesis

    輕型高壓直流輸電（ hvdclight ）技術是在傳統直流輸電基礎上發展起來的一種新型輸電技術，其主要部件是以絕緣柵雙極晶體管構成的電壓源換流器（ vsc ） 。
  13. A silicon self - aligned technology was achieved by using a smart power integrated technology to get high power of the circuit. vertical pnp transistor whose base is epitaxy layer was used as output. the collector of the vertical pnp transistor was set on the back of the chip with low resistance p + substrate as ohm contact

    在工藝中，採用了smart功率集成技術實現電路的大功率，基區是外延層的縱向pnp晶體管作為輸出，將集電極置於晶元背面，採用低電阻率p ~ +襯底作為歐姆接觸。
  14. A new type high efficiency synchronous step - up dc / dc converter for hand - held device is designed in this thesis. it works in the pfm ( pulse frequency modulating ) mode, and its switching frequency can up to 500 khz. it offers a built - in synchronous rectifier that reduces size and cost by eliminating the need for an external schottky diode and improves overall efficiency by minimizing losses

    本文設計了一種用於移動電子設備的高效同步整流的dc / dc升壓晶元，該晶元採用pfm （脈沖周期調制）調制方式，工作頻率最高可達500khz ，內部集成功率管作為同步整流管，代替傳統的肖特基二極體，導通電阻僅有0 . 4
  15. According to the following design theory : the dsp calculates in real time and produces three phases spwm waves to control the on or off of the 6 igbts in ipm respectively. ipm then inverts the commutated single phase direct current ( insulated gate bipolar transistor ) into three phases alternating current. when modulated signals of spwm are changed, the on - off time of switches also changes, so as to the voltage and frequency of output signals

    本文提出了一種基於dsp （數字信號處理器tms320f240 ）的通用的三相間接變頻電源系統，利用分段同步調製法和混合查表法，實時計算不同頻率下的采樣周期、電壓幅值、輸出脈寬，產生雙極性spwm波形，經驅動放大後用于ipm （ intelligentpowermodule ）中的絕緣柵雙極型晶體管柵級驅動，以控制電源的輸出電壓和頻率，實現變頻電源的智能數字控制。
  16. The optical characteristic and photoelectricity response of zno have been studied in this thesis. in addition, zno - based schottky diodes and zno - based thin - film transistors were fabricated

    本文主要研究了zno薄膜的生長及其光學性質和光電響應;製作了肖特基二極體和薄膜晶體管。
  17. This paper has designed a inverter power supply of volume 2kva, working frequency 20khz., based on that has analyzed the characteristic of igbt ( insulated gate bipolar transistor ). it was provided the working theory of dc voltage circuit and bridge type invert circuit

    本文在分析了igbt （絕緣柵雙極晶體管）特性的基礎上，設計了一臺容量為2kva 、頻率為20khz的高頻逆變電源。
  18. After introducing characteristic and hardware structure of dsp, 1 decide to adopt current excellent performance integrate dsp and its tap system ; after i know this, this paper present a software and hardware scheme which is based on fault signal " data acquisition and processing by using advanced dsp technology, and in arithmetic aspect, a dsp based real - time digital filter comes true. this simplifies the system design and improves the stability and real - time property of data acquisition. adopting a dsp integrate plank ( including a dsp cmos chip and external storages ) and using software to manage and prepare entire system can improve greatly the extension, maintenance and common of the application system

    在闡述了dsp的硬體結構及特點之後，結合本課題的研究方向，本文決定採用目前最高性能的dsp集成板及其開發系統，並在了解此集成板的硬體結構和開發環境的基礎上，提出了利用先進的dsp技術來實現故障信號的採集與處理的軟硬設計方案，並從演算法方面實現了dsp的實時數字濾波，簡化了測試系統的設計，提高了測試儀器的實時性；而採用dsp板卡（上面含有一個dsp晶元及外存） ，通過軟體對整個系統進行調配和管理，可以極大地提高應用系統的可擴展件、可維護件及通用性。
  19. The dominance and properties of the cmos integrated reference were also described, and the research meaning was pointed out. related device theory and process model used in design were described. the temperature related model and the influencing factor of two active devices, subthreshold mosfet and pnp substrate transistor, based on cmos process were analyzed and compared, and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference

    闡述了設計中相關的器件理論與工藝模型，對cmos工藝下的兩種有源器件，即亞閾值工作狀態下的金屬場效應晶體管（ mosfet ）及襯底pnp雙極型晶體管（ bjt ）的溫度模型及其影響因素進行了分析和比較，指明襯底pnp雙極型晶體管更適合作為基準源的溫度補償元件。
  20. Secondly, the multiplier circuit configuration is established with the designing thought of multiplier. thirdly, simulation and optimization of the detail practice multiplier circuits are operationed by using of hamonic balance analysis ( hb ) method in software ads. fourthly, passive quintupler using schottky diode and active doubler, tripler, quadrupler and quintupler using phemt are researched and developed, respectively

    本文的主要工作是先介紹分析倍頻器的基本原理，根據倍頻器的設計理念，建立電路拓撲結構，採用ads軟體並利用諧波平衡分析法對具體倍頻電路進行模擬優化，分別研製了無源肖特基二極體五次倍頻器以及有源phemt晶體管2 、 3 、 4 、 5次的各次倍頻器。
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