晶體管放大器 的英文怎麼說

中文拼音 [jīngtǐguǎnfàngdàqì]
晶體管放大器 英文
tra istor amplifier
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 放 : releaseset freelet go
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 放大器 : amplifier; pantograph; lawnmower; enlarger; magnifier
  • 放大 : amplify; magnify; boost; enlarge; blow up; gain; amplification; enhancement; multiplication; magn...
  1. The transistor is an amplifier.

    晶體管是一個放大器。
  2. Branch of science that deals with the study and application of electron devices, e. g., electron tubes, transistors, magnetic amplifiers, etc

    關于電子器件（例如電子管、晶體管、磁放大器等）的研究與應用的一門科學分支。
  3. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  4. The trained neural network model can be used to solve a variety of problems emerged in rf / microwave circuit design, such as in microwave circuit cad, the established model structure can be used to characterize the nonlinear behavior of microwave circuits

    如用於微波電路cad ，可用所建立的模型結構來描述這么一類微波電路的非線性行為特徵；如用於微波電路設計，則可進行如共面波導、晶體管、傳輸線、濾波器和放大器等的設計；如用於微波電路優化，則可用所建立的電路模型優化電路參數，進行阻抗匹配等。
  5. Design and simulate of the single stage common emitter amplifier

    單級阻容耦合晶體管放大器電路設計與模擬
  6. Are you familiar with the performance of this type of transistor amplifier

    你熟悉這種晶體管放大器的性能嗎？
  7. Cascaded transistor amplifier

    級聯晶體管放大器
  8. The transistor amplifiers, which are the building blocks from which op - amp integrated circuit are constructed, will be discussed

    我們將對構成運算放大器的基本部件：晶體管放大器進行討論。
  9. Based on the analysis of transistor amplifier noise model, we select devices with low noise in reason. and the method how to reduce phase noise and phase jitter is also discussed

    依據晶體管放大器的噪聲模型分析合理選擇了低噪聲的元器件，對降低相位噪聲和相位抖動的方法作了一些探討。
  10. Recent years, harris and mar in usa, philips in holland, thomson in france and toshiba, nec in japan have been doing efforts in researching and exploiting of new material and new kinds of transistor amplifier and have offered varieties of schemes

    近年來，美國的harris和mar 、荷蘭的philips 、法國的thomson 、日本的toshiba和nec等公司都在不斷地致力於新材料和新型晶體管放大器件的研製開發，並提供各種應用解決方案。
  11. The exportation resistance of a device work device with what link after loading the resistance s the certain connections for should satisfying, in order to prevent mount to load the appearance produce the obvious influence. with each other connect to say to electronics equipments, for example after signal connect the enlarger, ex - class to connect class, only behind first - degree importation resistance before larger than first - degree exportation resistance 5 - 10 times are above, can think the resistance to match good ; connect the box come saying, electronics tube the machine should choose to use with for the enlarger its output to carry the mark to call the resistance the box for, but transistor enlarger then have noing this restrict, can take officing why resistance of equal or approximate box

    一件器材的輸出阻抗和所連接的負載阻抗之間所應滿足的某種關系，以免接上負載后對器材本身的工作狀態產生明顯的影響。對電子設備互連來說，例如信號源連放大器，前級連后級，只要后一級的輸入阻抗大於前一級的輸出阻抗5 - 10倍以上，就可認為阻抗匹配良好對于放大器連接音箱來說，電子管機應選用與其輸出端標稱阻抗相等或接近的音箱，而晶體管放大器則無此限制，可以接任何阻抗的音箱。
  12. In fact, many people then liked and now still like the beautiful sounds produced by the ampliers made of the electric tubes even if the objective technical specifications of the electric tubes are far worse than that of the circuts of semi - conductor

    事實上，很多人那時喜歡，現在也喜歡電子管放大器營造的靚聲，盡管客觀技術規格比晶體管差得太多了。
  13. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162

    電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管
  14. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722

    電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管
  15. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688

    電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管
  16. Specification for harmonized system of quality assessment for electronic components - blank detail specification : case - rated bipolar transistors for high frequency amplification

    電子元器件質量評定協調體系規范.空白詳細規范.高頻放大用管殼額定雙極晶體管
  17. Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section 4 : blank detail specification for case - rated bipolar transistors for high - frequency amplification

    半導體器件.分立器件.第7部分:雙極晶體管.第4節:高頻放大雙極晶體管的空白詳細規范
  18. Semiconductor devices - discrete devices. part 7 : bipolar transistors. section four - blank detail specification for case - rated bipolar transistors for high - frequency amplification

    半導體器件分立器件第7部分:雙極型晶體管第四篇高頻放大管殼額定雙極型晶體管空白詳細規范
  19. Specification for harmonized system of quality assessment for electronic components - blank detail specification : ambient - rated bipolar transistors for low and high frequency amplification

    電子元器件用質量評估協調體系規范.空白詳細規范.低頻與高頻放大用額定周圍環境的雙極晶體管
  20. Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section one : blank detail specification for ambient - rated bipolar transistors for low and high - frequency amplification

    半導體器件.分立器件.第7部分:雙極性晶體管.第1節:低頻和高頻放大用的額定環境晶體管的空白詳細規范
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