晶體質量 的英文怎麼說

中文拼音 [jīngtǐzhíliáng]
晶體質量 英文
crystal mass
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 質量 : 1 [物理學] mass 2 （產品或工作的優劣程度） quality 3 economy （離子源的）; 質量標準 quality level...
  1. Although rose quartz is usually too cloudy to be used as a cut gemstone, a few exceptional pieces are found with enough clarity and color to make fine gems. most gemmy rose quartz is used as cabochons where the clarity is not as important as the color. rose quartz is also a very attractive ornamental stone and is carved into popular spheres, pyramids, obelisks, figurines and ornate statues

    粉晶原礦大多為塊狀，產于各地偉晶巖中，生長在上層的質地比較好，粉晶的質地易脆，因內含有微量的胎元素而形成粉紅色，如果長時間接受陽光爆曬會失去原有的嬌嫩色澤，常見的人工加工方式是染色，透明度由不透到半透至全透明的都有，非常清澈明亮的天然晶體，我們稱之為星光粉晶。
  2. At. detail specification for cold welded seal quartz crystal units for oscillator applications - dn, dq and dp enclosures, 50 to 125 mhz frequency range - fifth overtone thickness - shear mode, at - cut, for operation over narrow temperature ranges temperature controlled - full assessment level

    經質量評定的振蕩器用冷焊封石英晶體振子詳細規范. dn dq和dp外殼， 50至125mhz頻率規范.窄溫范圍
  3. High accuracy kdp crystal optics is now considered as one of optics that is the most difficult to be processed for its series of disadvantageous characteristics to optics processing such as anisotropy, soft nature, easy to deliquesce, high brittleness, sensitive to temperature change, easy to crack and so on. therefore the long machining period, low percent of pass and astaticism quality has become the bottleneck of icf technology, and the surface quality control of kdp crystal processing has become the key problem to be solved in the research of icf in our country

    Kdp晶體零件是目前公認的最難加工的光學零件之一，因為kdp晶體具有各向異性、質軟、易潮解、脆性高、對溫度變化敏感和易開裂等不利於光學加工的特點，所以加工周期長、合格率低、質量不穩定成為慣性約束聚變技術的瓶頸， kdp晶體超精密加工表面質量控制問題已經成為我國慣性約束聚變研究中亟待解決的關鍵問題。
  4. The structures and characteristics of several graphite samples are measured by means of powder x - ray diffraction ( xrd ), brunauer - emmer - teller ( bet ) surface area measurement, inductively coupled plasma ( icp ) spectroscopy, particle size analysis and electrochemical measurements. the effects of origin, structure, impurity, particle size, specific surface area of carbon materials on the electrochemical characteristics are studied. a synthetic graphite with abundant resources, low cost and favorable performance is determined as the raw material for modification of graphite

    採用xrd 、 bet 、 icp 、激光粒徑分析及電化學性能測試等方法，對國內外多種典型石墨樣品的結構與性能進行比較，研究石墨材料的來源、晶體結構、雜質含量、顆粒大小、比表面積等因素對其充放電性能的影響，確定一種性能較好、價格低廉、來源廣泛的普通人造石墨粉作為熱處理與摻雜改性、以及復合結構炭材料研究的原材料。
  5. Complete crystal shape, high diaphaneity and low impurity. suitable for circular saws, frame saws and geological broach

    晶體完整，透明度高，雜質含量低，晶形與晶體強度性能優越。使用於圓鋸切片、框鋸切片、地質鉆頭。
  6. The process of growing ktp crystal of high quality and low conductivity was studied. it was pointed out that many factors such as the uniformity of temperature distribution in the furnace, the accuracy of temperature control, the quality and direction of seed crystal and the speed of temperature drop all had an important influence on the quality of ktp crystal

    研究了生長高光學質量、低電導率ktp晶體的工藝過程，指出晶體生長爐溫度場的均勻性、控溫精度、籽晶的質量和定向以及降溫速度的快慢對晶體的光學質量有著重要的影響。
  7. The analysis of ir spectrum and melt flow index showed that the composite had a micro - crosslinking structure, and the analysis of dsc discovered there was - spherulite in the aggregate structure of the composite of pp

    紅外光譜分析和熔體質量流動速率的測定表明，復合材料體系產生了微交聯； dsc分析發現， pp材料的聚集態結構中含有球晶。
  8. The structurally perfect and high - quality ba0. 5sr0. 5tio3 single - crystalline thin films were prepared on laalo3 and mgo substrates by pulsed laser depositioa the ba0. 1sr0. 9tio3 / yba2cu3o7 - heterostructure films were fabricated by pulsed laser deposition on a vicinal laalo3 su bstrates

    詳盡地分析這些薄膜的衍射圖樣可知，薄膜都是以外延特性生長的而且晶體質量良好，但薄膜生長模式及表面平整度受沉積條件影響較大。
  9. Study on the population structure of northeast hare lepus mands huricus radde from eye lens weight dividing age group

    用晶體質量劃分年齡組調查東北兔的種群組成
  10. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  11. Based on the requirement of the device, we grow the films of silicon of high quality. the thickness of the epilayer is from 0. 4 u m tol p m, the doping concentration can be controlled conveniently

    然後，根據器件的要求，利用uhv cvd技術，生長出優質薄硅外延片，其厚度在0 . 4 m 1 m ，摻雜濃度可任意調節，晶體質量良好。
  12. Combining the resu1t of l { alnan spectra, we reach the conclusion that the crysta1 qua1 i ty of 2 # sall1p1e is better than that of 1 # sample, afld 3 # samp1e is the worst

    結合raman的測量結果我們得出2 #材料的晶體質量比1 #的好，而立方相的3 #樣品質量最差。
  13. Abstract : abstract ： by analyzing the design principle of the shear strength test method for chips of semiconductor devices, it is conchuded that the chip quality is the basis for the determination of chip shear strength criterion, which in turn is the shear strength criterion for passive components in hybrid circuits

    摘要：摘要：通過對半導體器件的晶元剪切強度試驗方法設計原理的分析，得出晶元質量是設定晶元剪切強度的依據，並以此作為混合集成電路中無源元件的剪切強度判據。
  14. Larger growth pressure of buffer layer led to the dramatic increase of structural and optical quality of gan epilayer, and the improvement in quality was attributed to the transition of growth mode from 3d to quasi 2d, which was revealed by scanning electron microscope

    發現緩沖層的生長壓力變化對退火后緩沖層表面的狀態影響極大，增大緩沖層生長時的反應室壓力可以明顯提高外延gan的晶體質量和光學質量。通過sem分析，發現提高緩沖層生長壓力時，高溫gan生長明顯經歷了從三維生長到二維生長的過渡，晶體質量明顯提高。
  15. From the result of the practice, this structure enhances the brightness of led effectively, improves the quality of the crystal and improves the performance of the device

    並且從實驗結果看，雙層突變異質結有效提高發光亮度，改善了器件參數，晶體質量變好。
  16. Appling p - n graded heterojunction instead of abrupt one is studied deeply in theory, and the conclusion is that it will enhance the current injection ratio, decrease the built - in voltage, improve the quality of the crystal and it will not affect the confinement to the hole

    在理論上提出在hb - led器件的dh結構中使用p - n結的漸變異質結替代現行的p - n突變異質結。分析採用異質結漸變方式將增加hb - led的電流注入比，減小內建電勢，改善晶體質量，並且不影響p - n結對空穴的限制。
  17. We also investigated the effect of c on the samples formed by ion implantation of mn and c. we studied the samples " crystal structure and surface appearance by x - ray diffraction and afm, experimental results revealed that with increasing the annealing temperature, the crystal lattice reformed and defect in the surface reduced gradually

    還進行了mn ~ + 、 c雙離子注入，研究了c對樣品性質的影響。利用x -射線衍射法和原子力顯微鏡對樣品的晶體結構和表面形貌進行了研究。發現隨著退火溫度的升高，樣品的晶格質量得以恢復；注入表面形成的晶格缺陷逐漸減少。
  18. Silicon films with high crystal quality and good electrical properties have been successfully grown on porous silicon substrate by ultra - vacuum electron beam evaporator

    首次採用超高真空電子束蒸發的方法在多孔硅上成功地外延出晶體質量和電學性能良好的單晶硅。
  19. As for our 3 # detector, we didn " t find response, which may attribute to the difficulty in cubic gan growth and the bad qua1ity of the epitaxia1 1ayer

    但3探測器沒觀察到應有的l響應特性，這與立方相結構的gan材料生長困難，晶體質量不高有關。
  20. Results from various measurement technique show that sige films grown by uhvcvd have higher crystal quality than those by ssmbe and gsmbe. and uhvcvd is proposed to be employed in the further work of our sige - oi fabrication

    從這些測試結果可以得出， uhvcvd方法可以生長的高質量、未弛豫的sige薄膜，而ssmbe和gsmbe生長的sige層都發生了一定程度的弛豫，晶體質量相對較差。
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