晶體鍵聯 的英文怎麼說

中文拼音 [jīngjiànlián]
晶體鍵聯 英文
crystal binding
  • : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
  • : 體構詞成分。
  • : 名詞1 [機械工程] (使軸與齒輪、皮帶輪等連接並固定在一起的零件) key 2 [書面語] (插門的金屬棍子)...
  • : Ⅰ動詞(聯結; 聯合) unite; join Ⅱ名詞(對聯) antithetical couplet
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Then the paper analyzes control system of hybrid active power filter, the way of harmonic detecting and the principle of control system, digital low pass filter and the generation of pwm, on the base of which the paper designs a new parallel hybrid active power filter which is controlled by tms320lf2407, and detailedly introduces drive circuit of pwm, sampling circuit of current, voltage adjustment and protection circuit, communication circuit, liquid crystal display circuit

    分析了混合型有源濾波器的控制系統、諧波檢測方法及控制原理、數字低通濾波器和pwm信號的產生,在此基礎上設計了一種基於tms320lf2407為控制核心的並混合型有源電力濾波器硬原理圖。並對pwm驅動電路、電流采樣電路、電壓調整、按輸入和保護電路、通信模塊、液顯示模塊進行了較詳細的分析說明。
  2. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積,得到了含氮量為21at的cn薄膜;研究了襯底溫度和反應氣壓強對薄膜結構特性的影響,給出了cn薄膜中n含量較小、 sp ~ 3合結構成分較少和薄膜中僅含有局域cn的原因;引入脈沖輝光放電等離子增強pld的氣相反應,給出了提高薄膜態sp ~ 3合結構成分和薄膜的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為反應氣並引入輔助氣h _ 2 ,得到了含n量為56at的態cn薄膜;探討了cn薄膜形貌、成分、結構、價狀態等特性及其與氣壓強和放電電流的關系,證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果;採用光學發射譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對等離子中活性粒子相對濃度和氣相反應過程的影響規律,給出了cn薄膜沉積的主要反應前驅物,揭示了cn薄膜特性和等離子內反應過程之間的系;採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性,揭示了si原子對薄膜生長過程的影響,給出了si基表面碳氮薄膜的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性,並可顯著提高態碳氮材料的生長速率。
  3. Unlike many products that are sold as environmentally friendly cleaners that are not that effective, oxygen bleaches really do work and for some stains even do a better job than traditional bleaches or cleaners

    過氧碳酸鈉為白色結粉末狀或顆粒狀固,由於碳酸鈉與過氧化氫以氫接,其在水中有很好的溶解度,並隨溫度的升高而上升。
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