晶體鍵 的英文怎麼說

中文拼音 [jīngtǐjiàn]
晶體鍵 英文
crystalline bindings
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 鍵 : 名詞1 [機械工程] （使軸與齒輪、皮帶輪等連接並固定在一起的零件） key 2 [書面語] （插門的金屬棍子）...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The hydrogen - bonded 3d supramolecular compound derived from cinchona alkaloids : synthesis and crystal structure

    一個具有三維氫鍵超分子結構的金雞納霜生物堿衍生物的合成和晶體結構
  2. High accuracy kdp crystal optics is now considered as one of optics that is the most difficult to be processed for its series of disadvantageous characteristics to optics processing such as anisotropy, soft nature, easy to deliquesce, high brittleness, sensitive to temperature change, easy to crack and so on. therefore the long machining period, low percent of pass and astaticism quality has become the bottleneck of icf technology, and the surface quality control of kdp crystal processing has become the key problem to be solved in the research of icf in our country

    Kdp晶體零件是目前公認的最難加工的光學零件之一，因為kdp晶體具有各向異性、質軟、易潮解、脆性高、對溫度變化敏感和易開裂等不利於光學加工的特點，所以加工周期長、合格率低、質量不穩定成為慣性約束聚變技術的瓶頸， kdp晶體超精密加工表面質量控制問題已經成為我國慣性約束聚變研究中亟待解決的關鍵問題。
  3. Abstract : starting from the crystal structural characteristics and through the theoretical calculation of the chemical bonds of diasporite and kaolinite structures and the study of the flotability of the flotation systems of anionic collector ( sodium oleate ) and cationic collector ( dodecylamine ), the relationship between the crystal structural characteristics and the flotability of diasporite and kaolinite and the main causes for the difference in their flotability are analysed by the crystal chemical theory of minerals

    文摘:從一水硬鋁石和高嶺石的晶體結構特徵出發，通過對一水硬鋁石和高嶺石結構中化學鍵的理論計算及陰離子捕收劑（油酸鈉） 、陽離子捕收劑（十二胺）浮選體系中可浮性的研究，採用礦物晶體化學理論分析了礦物晶體結構特徵與可浮性之間的關系，以及產生一水硬鋁石和高嶺石可浮性差異的主要原因。
  4. Taipei, taiwan ) at the dawn of the new century, tera xtal successfully produces taiwan s first 4 - inch lithium tantalate crystal ingot. this event marks an important milestone in the material industry of taiwan as it represents a self - developed technology breakthrough on a key material product

    新世紀的開始，兆晶科技股份有限公司成功地生產出國內第一支四英寸鉭酸鋰單晶棒。這是國內上游關鍵晶體材料業之重要的里程碑，由國人自行研發成功可以與日美一流競爭對手相比擬的產品。
  5. Crystals may be classified as either ionic or covalent by analogy with molecules.

    與分子的情況一樣，晶體也可以分為離子鍵型和共價鍵型。
  6. The inperfect crystal structure and its analysis for materials, is an elective course for the master graduate student, which include the crystallology principle, development of crystal diffraction, crystal determination and computer simulation of new phase, analysis of solid solution and superstructure, correction of crystal structure and bondvalent theory, analysis of inperfect crystal structure, analysis of amorphous structure and so on

    材料不完整晶體結構及其分析方法，為材料科學及工程等專業碩士研究生的選修課，內容包括晶體學基礎、晶體衍射技術最新進展、新相晶體結構測定與數值模擬、固溶體與超結構分析、晶體結構修正與價鍵理論、不完整晶體結構分析、非晶結構分析等。
  7. The voltage of lithium - intercalation reaction, impedance and structural stability of intercalation - type cathode material were analysed and calculated. theoritical results show that the reaction voltage depends on the content of lithium and the bond energy, and that the key ways to lower the electrode impedance are to increase the electronic conductivity of the electrode and the diffusion coefficient of lithium ion in the host and to decrease the size of powder. in addition, the thermal stability of lithium - insertion structure can be improved by using crystallographic co - lattice theory and doping treatment

    本文從嵌入式陰極材料的嵌鋰反應的電壓、阻抗及結構穩定性的分析和理論計算著手，得到了電壓取決于基體中各種離子間的鍵能及鋰含量、降低電極阻抗的關鍵是提高電子型導電性和li ~ +在基體中的擴散系數及減小粉末粒度的理論依據及其利用晶體的共格原理和摻雜改性的方式來提高材料嵌鋰結構的熱穩定性的設計思路。
  8. Wirings of the poly layer are always utilized under the silicon grid technics. to control the macro - cell signal delay and improve signal integrality, the crossing among different nets must be averagely distributed to reduce the number of layer permutation. the metal layer wirings should be maximized and the length of poly layer wiring in each net should be minimized

    硅柵工藝晶體管級布線利用多晶層走線，為了控制宏單元時延性能及改善信號完整性形態，關鍵是不同線網間交叉的均衡分配以減少走線的換層次數，最大化金屬層走線以及每一線網多晶層走線長度的有效控制。
  9. With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models

    熱力學理論和方法已足以獲得準確的相平衡關系；然而即使對于簡單的二元物系的結晶過程，晶核形成和晶體生長動力學的研究仍面臨許多困難，通常採用經驗模型表述，而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵，因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。
  10. The other is to combine with different material, in this way the key of design is to elect material with matching birefringent dispersion and similar physico - chemical nature

    另一種方法是採用不同的材料組合，設計的關鍵在於選擇雙折射色散相匹配、物化性能相近的晶體材料進行組合。
  11. So in one hand it requires the wafer ' s diameter to be more large in order to enhance the productivity, and on the other hand it puts forward more strict requirement about the crystal perfection and electricity character. especially the electronic character and the equality of micro - area in the crystal wafer has become the key factor to determine whether the device can be made on it or not. so the resistivity measurement of micro - area become one most important procedure in the chip machining. to ensure the produce quality of chip and the perfect performance of final production, the four - probe testing technology need to be deeply studied

    圖形日益微細化，電路尺寸不斷縮小，目前ic製造以8英寸、 0 . 13 m為主，預計在2007年左右將以12英寸、 65nm為主，這一方面要求圓片直徑不斷增大以提高生產率，另一方面對晶體的完美性、機械及電特性也提出了更為嚴格的要求。特別是微區的電學特性及其均勻性已經成為決定將來器件性能優劣的關鍵因素。因此，微區電阻率的測試成為晶元加工之中的重要工序。
  12. The novel method of liquid phase epitaxial growth process of p - sic from p - sic film on si substrate in c - saturated si solvent is further investigated. some processes of acquiring the fundamental technical parameters and some solution to some critical technical problems are introduced. especially, the optimized technical schemes of effectively restraining such a - sic polytypes as gh - sic coring and growing in p - sic epitaxial growth process is presented

    對利用硅襯底上的- sic薄膜從碳飽和硅熔體中外延生長- sic晶體的創新方法進行了工藝探索，介紹了基本工藝參數的獲取過程和幾個關鍵工藝問題的解決方法，特別是提出了通過工藝條件的調控來有效抑制6h - sic等型同質異構體在- sic生長過程中成核生長的工藝方案。
  13. This article gives a review on the progress of the recognition and complexation between cucurbiturils as a noval macrocyclic host compound and metal ion, including the synthesis methods of supermolecular adducts, crystal structures, thermodynamics of binding and potential applications

    摘要概述了新一代大環主體化合物南瓜尼與金屬離子的識別及配合作用的研究進展，包括其超分子配合物的合成方法，晶體結構，鍵合的熱力學性質及其應用前景。
  14. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  15. One of the most key technologies of preparing cd1 - xznxte detector is to make ohmic contact film electrode on cd1 - xznxte crystal ' s surface, and the main technology usually used is evaporation, but the cohesion of evaporated film is n ' t very firm

    制備cdznte探測器最關鍵的技術之一就是在cdznte表面制備出歐姆接觸薄膜電極。關于在cd _ （ 1 - x ） zn _ xte晶體表面制備接觸電極用導電薄膜，大都是採用蒸發鍍膜技術，膜層與cdznte晶體結合不很牢固。
  16. The results show that crystal inhomogeneities and suitable contacts are critical to the fabrication of high quality cdznte spectrometers. the modified growth technique is a new and promising method for growing highly pure and perfect cdznte single crystals. good quality ohmic contact detectors are achieved when gold or indiumare deposited as electrodes on polished and chemically etched surface

    結果表明：材料內部的缺陷和歐姆接觸是影響器件性能的兩個關鍵因素，採用改進的富鎘氣氛下坩鍋旋轉下降法生長的晶體具有較低的缺陷濃度，適合製作探測器，採用au 、 c可得到歐姆接觸。
  17. In this paper, the operation principle of the oscillator is analyzed first, from the point of view of theory the designs of crystal resonator and its equivalent circuit, crystal oscillator and thermostatic chamber are defined. the noise model of circuit is used to analyze key factors influencing phase noise of the crystal oscillator, in order to control phase noise of the crystal noise from the very beginning of the design

    本文首先分析了振蕩器的工作原理，從理論的角度闡明了晶體諧振器及其等效電路、晶體振蕩器和恆溫箱的設計，利用電路的噪聲模型來分析影響晶體振蕩器相位噪聲的關鍵因素，從設計就開始控制晶振的相位噪聲，為更好地實現課題的目標打下良好的基礎。
  18. A novel cleavage s - c bond of 2, 5 - dimercapto - 1, 3, 4 - thiodiazole and its two - dimensional crystal structure with dibenzyltin

    碳鍵斷裂及其與二芐基錫的晶體結構研究
  19. While many parts of this technology have made good progress ( such as increasing data storage density, reducing access time, improving performances of photorefractive memories, and the like ), the volatility of the stored data in photorefractive materials has become serious obstacle to the practical realization of photorefractive holographic memories

    近年來，在提高數據存儲密度、存取速度以及存儲器性能等方面，已經取得了重大的研究進展。光折變晶體中的非易失性存儲（長期保存和無損讀出）問題，已成為高密度全息存儲技術能否實用化的關鍵問題之一。
  20. Some successes have been achieved through microfabrication techniques, but the pursuit of a microscopically ordered pbg in the visible range was still a challenging endeavor. colloidal self - assembly has been utilized as a process to form 3d periodic structures because of its simplicity

    電磁流變技術的發展為廉價、簡便地形成三維有序結構以制備光子晶體提供了一條新的途徑，而這種方法的關鍵在於制備粒徑適當的電磁響應性微粒。
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