晶體開關 的英文怎麼說
中文拼音 [jīngtǐkāiguān]
晶體開關
英文
crystal switch-
Secondly the major mechanisms of degeneration of pcss are caused by both the filamentary nature of the current in high - gain pcss damage to the chip of the switch and the charge domain reached the anticathode causes the erosion of metal interface
開關退化的主要原因是:開關體內的絲狀電流對開關晶元的損傷;以及電荷疇到達陽極時來不及放電而產生的電荷擁擠現象對開關電極接觸表面的損壞。High accuracy kdp crystal optics is now considered as one of optics that is the most difficult to be processed for its series of disadvantageous characteristics to optics processing such as anisotropy, soft nature, easy to deliquesce, high brittleness, sensitive to temperature change, easy to crack and so on. therefore the long machining period, low percent of pass and astaticism quality has become the bottleneck of icf technology, and the surface quality control of kdp crystal processing has become the key problem to be solved in the research of icf in our country
Kdp晶體零件是目前公認的最難加工的光學零件之一,因為kdp晶體具有各向異性、質軟、易潮解、脆性高、對溫度變化敏感和易開裂等不利於光學加工的特點,所以加工周期長、合格率低、質量不穩定成為慣性約束聚變技術的瓶頸, kdp晶體超精密加工表面質量控制問題已經成為我國慣性約束聚變研究中亟待解決的關鍵問題。We design several combined photonic crystals models based on the destructive interference theory, which can transfer completely the energy of a signal from one channel to another, or can realize light switching
本論文首次利用干涉相消的原理,設計了滿足一定條件的復合型光子晶體能量轉移模型和光子晶體光開關。However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less
在國內, gan基微電子器件的研究剛開始起步,制備gan分立器件的工藝尚處于探索研究階段,特別是受algan gan二維電子氣材料來源的限制,國內algan gan基的場效應晶體管的研究開展得較少,關于肖特基整流二極體的研究更少。Taipei, taiwan ) at the dawn of the new century, tera xtal successfully produces taiwan s first 4 - inch lithium tantalate crystal ingot. this event marks an important milestone in the material industry of taiwan as it represents a self - developed technology breakthrough on a key material product
新世紀的開始,兆晶科技股份有限公司成功地生產出國內第一支四英寸鉭酸鋰單晶棒。這是國內上游關鍵晶體材料業之重要的里程碑,由國人自行研發成功可以與日美一流競爭對手相比擬的產品。I don t go back as far as punch cards, toggle switches, or transistor tubes
我不會回顧像打孔卡、撥動式開關或晶體管那麼古老的事物。Particularly, cr4 + - doped crystals as passive q - switch ( saturable absorber ) have got extensive attention, such as cr4 + : yag , cr4 + : gsgg , cr4 + : mg2sio4 and cr4 + : yso, which have the advantages of wild absorption band, good saturable absorption, long restored time, good photo - chemical stability, no fading, good thermal conductivity and high damage threshold
特別是近年來,摻cr4 +離子的各種晶體如cr4 + : yag , cr4 + : gsgg , cr4 + : mg2sio4和cr4 + : yso等作為被動調q開關受到了廣泛的關注。它們具有很寬的吸收帶和良好的飽和吸收性質,恢復時間較長,光化學性質穩定,無退化現象,熱導性好,損傷閾值高。This paper first begin with the connotation of virtual instrument technology, study and discuss the criterion and the working theory of usb deeply. on the principle of usb1. 1criterion, using usb interface chip usbn9604 and low consumption mirochip c8051f231, we designed the available interface of usb bus and its controlling software, turn the communicating function based usb bus between computer and testing device. second based on the developed interface of usb bus, using microchip pic16c62 and a mount of relays, we designed the multiswitching scanner and its controlling software to complete the funtion of accesses swithing in testing system. third calling the api function inside the windows using vb programming language, communicat with the impelling program of selected hid, achieve the function of testing instrument with usb interface, complete the development of upside software faced testing. at last, based on the deep studying of pcb testing method, used the developed multiswithing scanner and software faced testing, combinated with necessary testing instrument, we constructed the pcb testing system and analized the testing result simply
論文首先從虛擬儀器的技術內涵出發,深入研究和討論了通用串列總線usb規范及工作原理,並依據usb1 . 1規范,採用usb介面晶元usbn9604和低功耗微處理器c8051f231設計開發了通用的usb總線介面及其控制固件,實現了通用計算機與測試設備之間基於usb總線的通信功能;其次,在所開發的usb總線介面的基礎上,使用微處理器pic16c62和多路繼電器開關,設計開發出實現測試系統中測試通道切換功能的多路通道掃描器及其控制固件;再次,採用vb語言編程,調用windows內部api函數,與選定hid類驅動程序進行通信,實現usb總線介面測試儀器功能,完成面向測試的上層軟體開發;最後,在深入研究印刷電路板測試方法的基礎上,利用已開發的多路通道掃描器和面向測試軟體,結合必要測試儀器組建印刷電路板測試系統,並對測試結果進行了簡要的誤差分析。The design and analysis of vertical pnp transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain, rate of surface combination and leakage current, carriers lifetime of epitaxy layer and switch speed
從外延層載流子壽命與晶體管放大倍數,表面復合率與漏電流,以及外延層載流子壽命與晶體管開關速度等方面對于輸出級縱向pnp管進行了較為詳細的設計與分析,達到了電路中對輸出級縱向pnp管主要參數指標的要求。Current optical chips, of the kind used as lasers in cd players and as photodetectors in telecommunications switches, are manufactured from iii - v semiconductors
目前cd唱盤里的雷射,以及電訊開關里的光偵測器之類的光學晶片,是以第iii族與第v族半導體製成的。The structure, function and characteristic with the principle and method of tank gauging system are described. then the structure, principle of the circuit and the main chips of the data processing unit are introduced. after this, the software design of data processing unit including rs - 485 ( modbus ) module, 4 - 20ma analog module, on - off module, rtd module, pulse module, calculation and display module, communication module and neuron chip program module and also the method of resolving the problems which were found at the process of debugging are emphasized
隨后介紹了現場數據處理器的結構,電路原理,所運用的主要晶元;並重點闡述了作者在課題研究中所作的工作,即現場數據處理器軟體的設計包括八個功能模塊: rs - 485 ( modbus )模塊、 4 ? 20ma模擬量採集模塊、開關量處理模塊、 rtd信號採集模塊、頻率量採集模塊、計算和顯示模塊、通訊模塊、 neuron晶元中的程序模塊;以及在課題研究和現場調試過程中遇到的問題及解決辦法。Discrete semiconductor devices - metal - oxide semiconductor field - effect transistors mosfets for power switching applications
半導體分立器件.電力開關設備的金屬氧化物半導體場效應晶體管Mosfets discrete semiconductor devices - part 8 - 4 : metal - oxide - semiconductor field - effect transistors mosfets for power switching applications
半導體分立器件.第8 - 4部分:電力開關裝置用金屬氧化物半導體場效應晶體管Critical circuits in developing this board, such as tht modulation circuit, demodulation circuit, pll and filter, were analyzed in detail. parameters adopted in these circuits were also calculated. based on all that mentioned above, a rf board was implemented and related tests and experiments were successfully done as well
本文主要對cdpd移動終端數據機的硬體開發中的關鍵部分?高頻部分電路進行了研究,論文在cdpdv1 . 1規范的基礎上,提出了射頻部分電路的實現方案,選擇了合適的核心晶元,並對電路中的調制解調電路、鎖相環、濾波器等關鍵模塊進行了較為詳細的分析,對電路中的有關參數進行了計算。The design of high - voltage circuit based on pwm technology is briefly described. the closed - loop current control theory using analog instruments is fully discussed, followed which is that using digital instruments. it is an important part that the hardware and software design of the single chip - two arms and two chips - two arms current control circuits with a new chip applicable to digital current control system
簡單介紹了基於開關電源技術的高壓電路設計;詳細講述了模擬穩流電源的閉環穩流原理,並在此基礎上討論了利用數字電路實現穩流的原理及可能性;選擇出適合數字穩流系統的新型晶元,完成了單片雙路穩流系統、雙片雙路穩流系統的軟硬體設計;給出了一種簡單易實現的比例?積分控製程序。Bringing into play the communication market resources in hangzhou bay, the park devotes itself to the formation of a “ mobile valley ”, which means a unique zhejiang - flavored economic pattern : forming a complete telecommunication industry chain from software and operation development of key parts, such as ic chip, rf modules, base band, display, high capacity battery, to related components like cell phone housing, keypad, antenna, vibration motor, mould, pcb ( circuit board ), photoelectricity device, electronic device, connectors and system and software development, and operation service development
園區依託杭州灣通信市場資源,致力打造「移動谷」 ,創造中國浙江經濟特有的專業版塊模式:從集成電路晶元、 rf組件、基帶、顯示器、高能電池等核心器件到接手機外殼和按鍵、天線、振動馬達、模具、 pcb (電路板) 、光電器件、電子器件、連接件等相關組件及系統和軟體開發、運營服務開發,形成完整的通信產業鏈。High frequency switching technique is becoming more popular in the power electronics area, the high frequency power transistors are applied in the buck - boost type chopper system. the characteristics of power mosfet and insulated gate bipolar transistors ( igbt ), some new kinds of power swithing devices, are deeply studied
高頻開關技術是當今電力電子技術發展的方向,本文研究的buck - boost斬波系統中採用了高頻功率器件,所以本文對新型開關器件? ?功率mos場效應管[ mosfet ]和絕緣門極晶體管[ igbt ]的特性進行了初步研究。Adopting a silicon - on - insulator geometry can boost the rate at which the transistors can be made to switch on and off ( or, alternatively, reduce the power needed ) by up to 30 percent
採取絕緣層覆矽的幾何結構,可以提升電晶體在開與關之間的切換速度(換種說法是降低所需的功率)達30 %之譜。Development on the 10kv solid - state switch
絕緣柵雙極型晶體管固體開關的研製Research on igbt solid state switch
絕緣柵雙極晶體管固體開關技術研究分享友人