晶體電流 的英文怎麼說

中文拼音 [jīngtǐdiànliú]
晶體電流 英文
crystal current
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. Secondly the major mechanisms of degeneration of pcss are caused by both the filamentary nature of the current in high - gain pcss damage to the chip of the switch and the charge domain reached the anticathode causes the erosion of metal interface

    開關退化的主要原因是:開關體內的絲狀電流對開關晶元的損傷;以及電荷疇到達陽極時來不及放電而產生的電荷擁擠現象對開關電極接觸表面的損壞。
  2. We have been considering the transistor with a current fed into the emitter.

    我們所研究的晶體管都是把電流饋入發射極。
  3. For electrodeposition by dc methods, the metals deposite uninterrupted and the particles were also embeded uninterrupted into the coatings ; for electrodeposition by pc method, the particles with biggish volume were desorbed from the coatings and returned to the electrolyte again owing to the presence of pulse interval ; for electrodeposition by prc method, the particles carried positive charges are much more easy to desorb from the coatings owing to the effecf of reverse pulse current combined with pulse interval, in addition, the reverse pulse current also could dissovle the metals, further accelerates the desorption of particles, thus the particles size embeded in the coatings by prc method is the least

    直流電沉積時，基質金屬的沉積連續進行，粒子在電極表面不間斷嵌入鍍層;單脈沖電沉積由於脈沖間歇的存在使得具有較大體積的粒子會脫附，重新回到溶液中;採用周期換向脈沖時，反向脈沖電流使表面荷正電的較大的粒子更易從電極表面脫附，同時，反向脈沖電流對基質金屬的溶解作用，也會促進粒子的脫附，因此鍍層中復合粒子尺寸最小。隨著鍍層中粒子復合量的增加，三種鍍層的晶粒都明顯細化，說明al _ 2o _ 3的存在阻止了晶粒的長大，提高了電沉積過程中晶核的形成速率。
  4. Monitor apparatus can measure valid value of three phase voltage and current, power factor, three phase disequilibrium, instant flecker of short time and harmonic without twenty, degree and harmonic distortion total. the paper are laid on the following. ( 1 ) master plan and function of circuit, ( 2 ) hardware design including circuit and principle of a / d conversion, phase lock, liquid crystal display and keystroke and so on, ( 3 ) design of system software including digital filtering, fft, a / d conversion and monitor interface of pc, ( 4 ) system test

    監測儀能夠完成包括三相電壓、三相電流的有效值、功率因數、三相不平衡、電壓短期閃變、以及20次內的諧波、諧波相位、諧波失真總量等的測量。論文重點介紹了以下幾部分： （ 1 ）電路的總體設計和功能； （ 2 ）硬體設計，包括a d轉換、鎖相環、液晶顯示和按鍵輸入等原理和電路。 （ 3 ）系統軟體設計，包括a d轉換、 fft 、數字濾波等程序的原理和演算法以及上位機監控界面的設計； （ 4 ）系統測試。
  5. Standard test method for measuring transistor and diode leakage currents

    晶體管及二極體泄漏電流測量的標準試驗方法
  6. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  7. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  8. However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less

    在國內， gan基微電子器件的研究剛開始起步，制備gan分立器件的工藝尚處于探索研究階段，特別是受algan gan二維電子氣材料來源的限制，國內algan gan基的場效應晶體管的研究開展得較少，關于肖特基整流二極體的研究更少。
  9. Instead of relying on mechanical manipulations, majumdar and his colleagues speculated that silicon transistors might electrically control ions dissolved in fluids as well as they could electrons

    因此馬強達和同事舍棄了機械控制方法，他們猜想矽電晶體或許能像控制電子流向一樣，以電子方式控制溶解在液體中的離子。
  10. In the paper, on the basis of research of static state and transient state in the scr and series connection valve circuit, the high voltage scr changing current valve device has been developed for ac - dc - ac high voltage commutatorless motor. the series connection valve circuit has been designed and simulated. the hardware design and software programming of trigger pulse system and monitoring system in the photo - electronic - photo fashion has been completed

    無換向器電動機在火電廠等工礦企業的電機調速節能領域中有十分廣闊的應用前景，本文在對晶閘管元件和串聯閥電路的靜態特性和動態特性研究的基礎上，研製了用於交直交電流型高壓無換向器電動機的高壓晶閘管換流閥裝置，進行了串聯閥電路的設計和模擬，完成了電光電方式的觸發脈沖系統和監測系統硬體設計及軟體編程，並進行了裝置的實驗調試。
  11. The design and analysis of vertical pnp transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain, rate of surface combination and leakage current, carriers lifetime of epitaxy layer and switch speed

    從外延層載流子壽命與晶體管放大倍數，表面復合率與漏電流，以及外延層載流子壽命與晶體管開關速度等方面對于輸出級縱向pnp管進行了較為詳細的設計與分析，達到了電路中對輸出級縱向pnp管主要參數指標的要求。
  12. Eddy - current sensor conversion circuit consist amplification circuit, band - pass filter circuit, demodulation circuit, differentiation phase and data sampling circuit. these circuits are used to convert the test signal of eddy - current sensor to discrete signal tend to process. the microprocessor system that formed of dsp chip is used to data fitting of test system, data displaying and data communicating with personal computer, etc. the interference questions of hardware design and the measure of eliminating interference signal in the subject are introduced in the last of this chapter

    硬體電路的設計主要分三大部分來實現：激勵源電路部分，由分頻電路和頻率合成電路組成，產生頻率穩定的激勵信號以確保檢測任務的正常進行；傳感器變換電路部分，由放大電路、濾波電路、檢波電路、鑒相電路和數據採集電路組成，主要將電渦流傳感器檢測線圈檢測到的信號變換成只含有被測信息的離散信號，易於后續電路處理；由dsp晶元構成的微處理系統，主要完成檢測系統的數據擬合、顯示及與主機通信等功能。
  13. Through analysising the characteristics of the power system with floating neutral point deeply, the paper puts forward a new plan of single - phase to ground fault line selection on the base of s ' s signal injecton method and gives the hardware and software design. in this design, the high speed sampling and data processing is carried out through using dsp processor ; the large electrice current is drived through the application of a high - performance audio power amplifier and transformer ; the communication between host computer and detectors is realized through rs485 bus technology ; the difference multilevel frequency - selected amplifier is designed and the feeble signal of space is sampled on the base of the theory of magnetic induction ; the interface between dsp and exterior chip and rs485 interface logical is designed through using fpga ; the using of lcd module and keyboard interfacing chip makes the interface between human and machine ; the programme of host computer and detectors is designed through using blocking design method

    在本設計中，採用高速的dsp處理器，實現了對故障特徵信息的高速採集與處理;採用大功率的功放晶元與變壓器配合的方法，實現了大電流信號的驅動輸出;採用485總線技術，組建了裝置主機與多探測器之間的主從式通訊網路，實現了多干擾條件下裝置主機與多探測器的可靠通訊;設計了差分式多級選頻放大電路，採用磁感應的方法實現了對空間微弱信號的接收;利用fpga技術，實現了控制器與多外設的介面及數字信號的串並轉換;採用了先進的lcd液晶顯示模塊及鍵盤介面晶元，設計了人機信息交互的介面;採用了模塊化的軟體設計方法，開發了裝置主機及探測器的軟體程序。
  14. The effects of the fabrication conditions on the crystal structure, grain size, micromorphology and electrochemical performance of these materials have been studied in depth. the reaction mechanism of the low - heating solid - state reaction method has also been investigated. in addition, a novel electrochemical method ( rpg method ) based on the concept of " ratio of potentio - galvano - charge capacity " has been for the first time developed to determine the diffusion coefficient of lithium - ion within insertion - host materials on the basis of the spherical diffusion model

    本論文較系統地考察了低熱固相反應法合成鋰離子電池正極材料的可行性問題，研究了工藝條件對材料的晶體結構、晶粒尺寸、微觀形貌及電化學性能等的影響，探討了低熱固相反應的機理，並通過引進「恆壓-恆流充電容量比」的概念，給出了一種測定鋰離子嵌入脫出固相擴散系數的新方法。
  15. It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x

    晶體的電學性能，發現生長態的mncd晶體均為p型半導體。隨著組分x值的增大，載流於的濃度np減小，遷移率p 。
  16. The digital inverter amplifier is controlled by the dsp chip tms320fl240. the high performance of digital voltage and current control loops and the improved digital pi control arithmetic based on the current prediction techniques is achieved in the software. and the dead - time of inverter also is compensated

    系統中逆變器的控制採用tms320fl240晶元來實現，在軟體中實現了電壓電流的雙環控制，提出並在逆變中應用了電流預估計的pi控制演算法，並對控制死區進行了補償。
  17. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  18. Crystal current amplifier

    晶體電流放大器
  19. If we have control over the transistor ' s emitter current by setting diode current with a simple resistor adjustment, then we likewise have control over the transistor ' s collector current

    我們只要簡單的調節電阻，設定二極體電流，就能控制晶體管的發射極電流，於是也就能控制晶體管集電極電流。
  20. Semiconductor devices ; discrete devices ; part 6 : thyristors : section 3 : blank detail specification for reverse blocking triode thyristors, ambient and case - rated, for currents greater than 100 a

    半導體器件.分立器件.第6部分:晶體閘流管.第3節:電流在100a以下的額定環境和外殼的反向阻擋三極閘流晶體管的空白詳細規范
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