晶體電離度 的英文怎麼說

中文拼音 [jīngtǐdiànlídù]
晶體電離度 英文
crystalline ionicity
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The direct application of eftl is flat panel displays. it has several preferences, emissive, wide view angle, quick response, wide working temperature range, high pixel resolution, anti - strike, long life, less number of fabrication process etc. all these properties are better than plasma display fed and lc

    它的主動顯示、平板化、視角大、反應快、工作溫度范圍寬、像素鑒別率高、抗震動、壽命長、工序少等特點，都勝過液晶、等離子體、 lc等顯示技術：第一章介紹了無機電致發光及有機電致發光的發展現狀和存在問題。
  2. The study indicate that sral2o4 : tb3 + phosphor can be composed from 1250c to 1550c, the phosphor ' s luminance reduce and the afterglow time shorten along with the compounding temperature ; the better luminance and afterglow with the better crystalloid degree ; the luminescence of tb3 + ion in the sral2o4 is coming from the transition of 5d4 - 7fj ( j = 6, 5, . . . 0 ) ; the afterglow is because of the electron that seized in the trap released which integrate with the luminescence center

    合成發光體亮度隨合成溫度的降低而逐漸降低，余輝時間逐漸縮短；當合成物具有較好的結晶度時，合成的發光粉不僅發光亮度高而且余輝時間長； tb ~ （ 3 + ）離子在sral _ 2o _ 4基質晶格中的發光主要來自於~ 5d _ 4 ~ 7f _ j （ j = 6 ， 5 ， … … 0 ）的躍遷；其餘輝是因為不斷有被陷阱所俘獲的電子釋放出來與發光中心復合。
  3. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  4. The result of transmission electron microscope ( tem ) showed that layers of layered silicates were exfoliated and dispersed in matrix homogeneously. according to statistical data, average thickness of layers was lonm, and the thickness of the biggest layers was less than 40nm, only a few layers were exfoliated in monolayer whose thickness was about inm

    透射電子顯微鏡（ tem ）照片顯示：層狀硅酸鹽片層發生剝離，片層均勻分散在nbr基體中，統計表明片層的平均厚度約為10nm ，最大的聚集體的片層厚度達到40nm ，推斷有一小部分片層剝離成單晶層的形式，厚度為1nm 。
  5. The voltage of lithium - intercalation reaction, impedance and structural stability of intercalation - type cathode material were analysed and calculated. theoritical results show that the reaction voltage depends on the content of lithium and the bond energy, and that the key ways to lower the electrode impedance are to increase the electronic conductivity of the electrode and the diffusion coefficient of lithium ion in the host and to decrease the size of powder. in addition, the thermal stability of lithium - insertion structure can be improved by using crystallographic co - lattice theory and doping treatment

    本文從嵌入式陰極材料的嵌鋰反應的電壓、阻抗及結構穩定性的分析和理論計算著手，得到了電壓取決于基體中各種離子間的鍵能及鋰含量、降低電極阻抗的關鍵是提高電子型導電性和li ~ +在基體中的擴散系數及減小粉末粒度的理論依據及其利用晶體的共格原理和摻雜改性的方式來提高材料嵌鋰結構的熱穩定性的設計思路。
  6. The process parameters of preparing nanosized titanium dioxide powders were systematically studied by electrochemical synthesis experiments at room temperature. the rutile phase and anatase phase powders were obtained in the sizes of 9. 7nm and 9. 2nm respectively, and the complete crystal powders were formed after calcined at 400 for two hours. in the process of experiments it was observed that the low current density resulted in rutile phase powders, while the addition of little amount of ions of sulfate promoted the formation of anatase phase powders

    在本實驗條件下，小的電流密度有利於金紅石相的生成，而少量硫酸根離子的引入對生成銳鈦礦相粉體有利，調整電流密度大小和引入硫酸根離子的量，可以得金紅石型和銳鈦礦型的混合混體；研究無定型粉體，銳鈦礦相粉體以及金紅石型粉體隨溫度的粒徑變化情況時發現，粉體在400以前晶粒長大相對緩慢， 400以後晶粒粗化現象嚴重。
  7. The addition of pmma will reduce the crystallinity of blends and improve of the uptake of liquid electrolyte ( 260 % ) and the ion conductivity ( ims / cm ). at the same time the pvdf - hfp maintains the mechanical strength of blends film acting as polymer framework

    Pmma的加入可以降低共混體系的結晶度，提高共混物的電解液吸收能力（ 260 ）和離子電導率（ 1ms / cm ） ；同時pvdf - hfp起到骨架作用，使共混物膜具有足夠的機械強度。
  8. A mixture of three amino acids ( arg, gly, glu ) labeled with fluorescein isothiocyanate ( fitc ) was separated in pdms microfluidic chip, the separation voltage is 200v / cm, the separation time is less than 120 seconds ; according to ccd fluorescence images, two distinct physical processes - stacking and destacking during sample injection were studied qualitatively ; rhodamine b, a kind of temperature - dependent fluorescence dye, was used as probe to develop a temperature - fluorescence intensity equation, then temperature - color map in microchannels was constructed, and temperature trait in microchannels on the pdms microfluidic chip was analysed. according to the results, we conclude that the electric field applied to the pdms microfluidic chip should not exceed 400v / cm

    利用pdms微流控晶元對fitc標記的精氨酸、甘氨酸、谷氨酸混合物進行了電泳分離，分離電壓為200v cm ，分離時間不到120秒；通過拍到的熒光顯微圖像對電泳注樣過程中復雜的樣品分子積聚與解聚現象作定性的分析；以熒光染料rhodamineb為溫度熒光探針，建立了pdms微流控晶元上的溫度-熒光強度的關系公式，並利用matlab圖像處理工具箱構建出微流體溝道內的溫度色圖，對pdms微流控晶元的微流道溫度特性進行了分析，根據實驗結果，我們認為對于pdms微流控晶元來說，在進行需要外加電場作用的試驗時，外加電場不應超過400v cm 。
  9. Once the sapphire was covered with nanotubes, they could place the metal electrodes of the transistors wherever they wanted and remove the unwanted nanotubes with highly ionized oxygen gas

    藍寶石上覆蓋奈米管后，就可在任意的位置安裝電晶體的金屬電極，再以高度離子化的氧氣除去不需要的奈米管。
  10. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  11. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  12. The tests of e - o applications by our flux ktp has been realized, the results showed : optical waveguides fabricated by using an ion - exchange process, which have an exchange - ion concentration depth profile and refractive - index profile, is close to a complementary error - function distribution, optical homogeneity and device thermal stability is much better. amplitude modulation switch formed by our flux ktp has the contrast ratio of 150 : 1 and insert loss is 2. 5 % at 1064 nm. high quality optical pulse with 1 ns width was cut successfully by using an e - o modulator from a laser pulse with 50 ns width, this modulator had run for three years, and the crystal did n ' t blackened, it showed our low conductivity flux ktp can endure high modulation voltage for a very long time

    Ktp晶體的電光應用試驗表明：用離子交換法製作的電光波導，其離子交換濃度、折射率變化符合餘弦誤差函數，光學均勻性以及器件的溫度穩定性較好；製作的強度調制電光開關，消光比為150 ： 1 ，對1064nm激光的插入損耗為2 . 5 ；製作的電光調制器用於激光脈沖整形試驗，從脈沖寬度50ns的激光脈沖削出脈寬1ns的高質量光脈沖，該電光開關經過長達三年多的使用，沒有出現晶體變黑現象，說明本實驗的低電導率ktp晶體能夠耐受長時間的調制電壓。
  13. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  14. The recent developments in normal spinel limn2o4 were reviewed, in the process of the solid state synthesis, we researched the effect of materials and synthesis temperature on crystal structure and electrochemical performance, which were characterized by dta - tg, sem, xrd as well as electrochemical performance testing. the structure, electrochemical performance and the correlations between them were all discussed in detail for these doped samples

    本文在綜述國內外鋰離子電池尖晶石型材料limn _ 2o _ 4研究進展的基礎上，結合dta - tg 、 sem 、 xrd和電化學性能測試等手段，系統研究了固相法制備鋰離子電池正極材料摻鈷錳酸鋰合成原料、合成溫度對所得材料外觀形貌、晶體結構和電化學性能的影響。
  15. We have many industry automize instruments such as temperature transmitter ( integrate temperature transmitter module ( double temperature transmitter module ), integrate temperature transmitter, track isolation temperature transmitter, hanging temperature transmitter, pressure transmitter ( expanding silicon pressure transmitter, sapphire pressure transmitter, spraying ( metal slim film ) pressure transmitter, strain pressure transmitter, ceramic resistor, capacitance pressure transmitter, 1151 and 3151 series pressure transmitter, fluid location transmitter module ( specializing for fluid location meter ), collocated electricity meter ( sigle round, double round ), signal isolation ( single round, double round ), transducer ( temperature, pressure ), display head ( showing 100 % scale, lcd fluid crystal, led digital display ), numerical instrument and so on

    產品有溫度變送器（一體化溫度變送器模塊（雙支溫變模塊） 、一體化溫度變送器、導軌式隔離溫度變送器、壁掛式溫度變送器、架裝式溫度變送器） 、壓力變送器（擴散硅壓力變送器、藍寶石壓力變送器、濺射式（金屬薄膜）壓力變送器、應變式壓力變送器、陶瓷電阻、電容壓力變送器、 1151 、 3151系列壓力變送器） 、液位變送器模塊（專為液位計廠配套） 、配電器（單迴路、雙迴路） 、信號隔離器（單迴路、雙迴路） 、傳感器（溫度、壓力） 、配變送器的顯示表頭（ 100刻度顯示、 lcd液晶顯示、 led數碼顯示） 、數字儀表等工業自動化儀器儀表。
  16. But for some special medium materials, such as liquid crystal display controller pcb, magnifiers must be used to gather images to gain enough precision of inspection for the weak contrast between the basic board and the conductor. the images near the light axes are much cleared than that far away from the light axes, so the images can not be simply segmented by black and white and inspected with the methods of pcb which are based on the black white image

    但對於一些特殊介質材料，如液晶顯示控制電路板的檢測，由於基板和導體之間對比度不大，而且為了達到檢測精度，必須採用放大鏡頭進行圖像採集，成像系統光軸附近的圖像成像質量較好，而偏離光軸較遠的圖像質量較差。不能通過簡單二值化來很好地分割圖像，而已有的印刷電路板檢測方法都是建立在二值圖像進行分析的基礎上。
  17. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。
  18. After finished the cyclic voltammetry experiments, the results showed that iron steel grid can act as good current collector in the aqueous electrolyte. while the scan rate was fall in the range of 0. 5 - 4. 0mv / s, electrochemical reaction of the lithium insertion / extraction in the solid phase was kinetically limited by the diffusion of lithium ions. after 40 cycles in aqueous electrolyte the discharge capacities of sample of s13 reached 77mah / g, and showed good cycle performance

    在水溶液中不銹鋼網可以作為電極的集流體，在0 . 5 - 4 . 0mv / s的掃描速度范圍內，鋰離子在尖晶石鋰錳氧化物的嵌入和脫嵌的電化學反應在動力學上是受鋰離子在固相中的擴散所控制，充放電實驗顯示樣品s13在水電解液中經過40個循環后達到77mah / g的放電容量，具有很好的循環穩定性。
  19. On the basis of photoelectronic dynamics, an energy model at room temperature that describes the cubic silver halide microcrystals not doped or doped with metal ion complex at deferent doping amounts is proposed, and then a series of differential equations describing the relationship between carriers number are set up

    本工作以光電子動力學理論為依據，建立了一種描述純鹵化銀微晶及摻有不同濃度金屬離子絡合物的鹵化銀立方體微晶在室溫下的能級模型，由此生成了一組描述粒子數關系的微分方程。
  20. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
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