有效散射質量 的英文怎麼說

中文拼音 [yǒuxiàosǎnshèzhíliáng]
有效散射質量 英文
effective scattering mass
  • 有 : 有副詞[書面語] （表示整數之外再加零數）: 30 有 5 thirty-five; 10 有 5年 fifteen years
  • 效 : Ⅰ名詞（效果; 功用） effect; efficiency; result Ⅱ動詞1 （仿效） imitate; follow the example of 2 ...
  • 散 : 散動詞1. （由聚集而分離） break up; disperse 2. （散布） distribute; disseminate; give out 3. （排除） dispel; let out
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 有效 : effective; valid; efficacious
  • 散射 : [物理學] [電學] scattering; radio scattering; scatter; dispersion
  • 質量 : 1 [物理學] mass 2 （產品或工作的優劣程度） quality 3 economy （離子源的）; 質量標準 quality level...
  1. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  2. In this paper, the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation, thus the carrier effective mass and scattering rate can be obtained. furthermore, taking account for the carrier density in each subband, we establish carrier mobility model in strained - si mosfet

    本文通過求解自洽薛定諤方程，確定了應變硅mosfet反型層的子能帶結構，在此基礎上經進一步計算得到子能帶內載流子的有效質量和散射幾率，綜合考慮各子能帶上的載流子的濃度分佈，建立了應變硅mosfet載流子遷移率的解析模型。
  3. In 6. 635, topics covered include : special relativity, electrodynamics of moving media, waves in dispersive media, microstrip integrated circuits, quantum optics, remote sensing, radiative transfer theory, scattering by rough surfaces, effective permittivities, random media, green ' s functions for planarly layered media, integral equations in electromagnetics, method of moments, time domain method of moments, em waves in periodic structures : photonic crystals and negative refraction

    本課程所覆蓋的論題包括：狹義相對論、運動媒質的電動力學、色散媒質中的波、微帶集成電路、量子光學、遙感、輻射傳輸理論、粗糙表面上的散射、有效介電系數、隨機媒質、平面層狀媒質的格林函數、電磁學中的積分方程、矩量法、時域矩量法、周期結構中的電磁波：光子晶體和負折射率。
  4. In succession, the theory of chirped - pulse amplifier system is given in detail, firstly, studying from designing experimental light road and optical components to theoretical analysis, we par ' tly finished the system by ourselves. about ultr a - shoft pulse with a pulse - width of 9. 8f s and output power of 650mw and band - width of about l 20nm is output from oscillator source, secondiy, the stretching capacity of single grating four - pass stretcher is measured using abcd matrix combining collins function, and the effect of relativ e parameters to the streching ratio is also simulated. thirdly, a new type of disjunctional frequency moduiating function is provided according to the gain - narrowing and gain - saturation which are appeared in the co urse of amplification, under modulating the two effects are both controlled on some e xtent, fourthiy, the effect of ase that is often ignored by people is analyzed and the resolving methods are also given

    從光路、光學元件的自行設計到理論分析計算，初步建立了一臺實驗系統；採用abcd矩陣法結合collins公式計算了四通式單光柵展寬器的展寬量，並模擬了相關參數對展寬比的影響，對實驗具有指導意義；評價了再生放大器和多通放大器的優缺點，對放大過程中通常忽略的放大自發輻射現象（ ase ）進行了分析，並提出了相應的解決方法；針對放大過程中出現的增益窄化和增益飽和現象，對輸入種子脈沖提出了一種新的分段頻率調制函數，實現了對增益窄化效應和增益飽和效應的共同抑制；提出了系統的材料（包括放大介質和光路中的普通介質）正是融合高階色散的來源。
  5. Then the solving procedures of these bies by the rwg functions based moment method are elaborated, and the method of modeling complex objects built of arbitrary line, surface and volume structures is developed. in order to solve realize antenna and circuit problems, methods of adding excitations and concentrated loadings with moment method are deceloped, and matrix pencil ( mp ) method is used to deembeded the s prameters of antennas and circuits from the computed current distribution. some numerical results of practical complex antenna and scattering problems are presented to illustrate the veracity and effectiveness of the method

    在第一部分中，首先從電磁場的基本理論出發，基於等效原理和邊界條件以統一的方法建立了用於分析金屬、介質及金屬與介質混合結構的邊界積分方程，並歸納和比較了各類積分的適用范圍和優缺點;在此基礎上，給出了使用基於rwg函數的矩量法求解各種邊界積分方程的一般過程;研究了具有任意線、面、體組成的復雜結構的電磁建模方法，並給出了各種多面連接情況下基函數和未知量的選取方法;研究了使用矩量法分析電路、天線問題時集總元件和激勵源的處理方法，並基於矩陣束方法（ matrixpencilmethod ）提取了電路和天線問題的s參數;最後通過分析一些工程中的復雜金屬天線問題和具有「金屬與介質混合結構」的散射和天線問題驗證了方法的準確性和高效性。
  6. Stimulated brillouin scattering ( sbs ) is considered to " be an effective approach for phase conjugation ( pc ) and increasing the brightness of solid laser radiation

    改善固體激光器光束質量，採用受激布理淵散射（ sbs ）是一種有效的手段。
  7. The technique is employed to analyze the electromagnetic scattering characteristics of anisotropic dielectric - filled apertures in grounded plane. the obtained results show that the proposed technique is accurate and efficient

    本文應用矢量有限元?邊界積分法分析了無窮大接地平面上的各向異性介質填充縫隙的電磁散射特性，數值結果表明這種方法是有效的。
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