本底摻雜 的英文怎麼說

中文拼音 [běndechānzá]
本底摻雜 英文
background doping
  • 本 : i 名詞1 （草木的莖或根）stem or root of plants 2 （事物的根源）foundation; origin; basis 3 （本錢...
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  2. Background doping effect

    本底摻雜效應
  3. According to our theoretic analysis and the realistic fabricating condition, the boa device with double - heterostructure gaas / gaalas has been proposed to obtain 3db bandwidth greater than 2. 5 ghz, half - wave voltage about 5v, extinction - ration less than - 40db, transmission loss of tm mode greater than 45db and transmission of te mode less than 0. 15db. to obtain higher switching speed, we proposed that traveling - wave electrode is applied to boa device

    我們選擇在sigaas襯底上生長重摻雜層，通過控制其厚度來設計速度匹配的boa光開關行波電極，實現boa光開關的高速和高帶寬，本文結合boa型光開關的特點提出一種行波電極型boa光開關結構，其理論3db調制帶寬大於20ghz 。
  4. High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique. successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out

    本文研究了在gaas和gap襯底上，本徵型和n型al摻雜zns基單晶薄膜的分子束外延生長，獲得了高質量的單晶外延薄膜。
  5. This paper presents the effects of some features on the productivity of raw c60 materials, such as distance and approaching speed of electrodes, helium partial pressure and arc current etc. then we separate and purify the raw materials and obtain pure solid c60 of 99. 9 % and compare the purification efficiency and effect of different fluxion phase and fixed phase and discuss the effects of the experimental conditions, such as the depositing speed, the type of the substrate, the surface structure of the substrate and the temperature of the substrate. finally, we use xps, afm, ultraviolet, infrared and raman to analyze the component, structure and feature of the films qualitatively and quantitatively

    本文首先研究了氦氣分壓、弧電流大小、電極間距以及電極推進速度等實驗條件對制備c _ （ 60 ）粗品產率的影響；接著選用柱色譜法分離提純得到了純度大於99 . 9的c _ （ 60 ）固體，比較了不同流動相和固定相的提純效率和效果；然後採用自己改進后的真空鍍膜機，利用電阻式加熱蒸鍍方法，得到了純c _ （ 60 ）薄膜和不同摻雜比的銀摻雜薄膜；探討了沉積速率、襯底種類、襯底表面結構以及襯底溫度等實驗條件對薄膜結構的影響；最後通過xps ， afm ，紫外，紅外，拉曼對薄膜的成分、結構和特性作了定性和半定量分析。
  6. In this paper, high quality transparent and conductive al - doped zno thin films on quartz substrates are prepared by electron beam evaporation technique

    本文採用電子束蒸發方法在石英襯底上制備出質量較好的al摻雜的zno薄膜材料。
  7. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  8. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
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