本徵半導電性 的英文怎麼說

中文拼音 [běnzhǐbàndǎodiànxìng]
本徵半導電性 英文
intrinsic semi-conduction
  • 本 : i 名詞1 （草木的莖或根）stem or root of plants 2 （事物的根源）foundation; origin; basis 3 （本錢...
  • 徵 : 名詞[音樂] （古代五音之一 相當于簡譜的「5」） a note of the ancient chinese five tone scale corre...
  • 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  1. In this dissertation, by virtue of self - developed test system, the studies on the optical and electric properties of oled of little molecule with different material, configuration manufactured with different processes have been presented. concepts of chromatics and the mechanism of carrier transportation in the semiconductor device have been applied here to qualitatively analysis and interpret the result of measurement. some interesting conclusions have been given which will be helpful in the further optimization of the performances of oled

    在oled研究過程中，對器件性能的表徵工作起到十分重要的作用，本文利用自主開發的測試平臺（包括軟體、硬體的搭建） ，對不同材料、結構、工藝的小分子oled器件進行了光學、電學性能的測試和評估，並依照色度學、半導體電輸運等理論成功的對測試結果作出了定性分析，揭示了制約器件工作性能的相關因素，為器件性能的進一步優化奠定了基礎、指明了方向。
  2. Intrinsic semiconductors are those in which the electrical behavior is based on the electronic structure inherent to the pure material

    本徵半導體是電學性質基於純材料的電子結構的半導體。
  3. Xps measurement results exhibited that no detectable fe2 + existed in the compound of a ~ fe2os doped with sn4 +, which suggest that oxygen anions or cation vacancies not only can compensate the charge balance but also significantly enhance the gas - sensitivity of a - fe2o3 based gas sensors. ( 3 ) conductive type of a - fe2o3 doped with sn4 + is showed in the n - type by hall measurement and gas - sensitivity measurement. the results of measurements and characterizations suggest that the sensitive mechanism of the a - fe2o3 based nano - materials prepared by this work be the surface resistance controlled mode

    （ 3 ）首次進行了霍爾測量，並結合氣敏測試結果，從不同方面證實了摻錫- fe _ 2o _ 3納米半導體的導電類型是n型；綜合粉體的電導率?溫度曲線、元件的電阻?加熱電流特徵曲線、元件在不同氣氛下的電阻特性以及比表面積等測試表徵結果，得出本文所製成的- fe _ 2o _ 3基氣敏元件的氣敏機理特徵屬于表面控制型。
  4. However, the pure cdte films have high electrical resistivity and this is mighty unfavourable to improve the conversion efficiency of cdte solar energy cells, and the best way is to doping donor or acceptor in pure cdte films

    但本徵cdte薄膜均為高阻半導體，這對于提高cdte薄膜太陽能電池的光電轉換效率是極為不利的，要提高cdte薄膜的光電性能必須通過施主或受主的摻雜。
  5. The tio2, cds and cds - tio2 films on the common glass substrate were prepared, respectively, using ti ( oc4h9 ) 4, cd ( cooch3 ) 2 and scn2h4 as raw materials by sol - gel method. the influences of manifold preparing parameters ( such as the concentration of sol, the amount of the peg. the number of coatings, the heat - treated temperature and time ) on the structure and performance were studied

    本文採用溶膠-凝膠技術，以鈦酸丁酯、乙酸鎘和硫脲為原料，以普通玻璃片為載體，制備了納米tio _ 2薄膜、 cds薄膜和cds - tio _ 2復合半導體薄膜，研究了制備過程中多種制備參數（如溶膠的濃度，聚乙二醇（ peg ）的加入量，鍍膜層數，熱處理溫度及時間）對薄膜結構和性能的影響，採用x -射線衍射（ xrd ） 、掃描電鏡（ sem ） 、能譜分析（ edxa ） 、紫外-可見吸收光譜（ uv - vis ）等測試手段對各薄膜進行了結構和物性表徵。
  6. We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports

    本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。
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