束縛能 的英文怎麼說

中文拼音 [shùfúnéng]
束縛能 英文
binding energy
  • 束 : Ⅰ動詞1 （捆; 系） bind; tie 2 （控制; 約束）control; restrain Ⅱ量詞（用於捆在一起的東西） bundle;...
  • 縛 : 動詞（捆綁） bind; tie up
  • 能 : 能名詞（姓氏） a surname
  • 束縛 : tie; bind up; fetter; bound; constrain; rigid control; trammel
  1. Ionization dominates if the particle has an energy larger compared to atomic binding energies.

    若入射粒子能量大於原子的束縛能則電離是主要的。
  2. The spinar is a gigantic machine converting gravitational binding energy into electromagnetic radiation by means of rotation.

    旋轉體是一架通過自轉把引力束縛能轉換為電磁輻射的巨大機器。
  3. Influence of nuclear binding energy in different energy

    不同能量下核束縛能的影響
  4. Furthermore, we use the wave function and binding energy obtained from above to calculate the photoionization cross - section of the impurity

    然後在此基礎上，我們採用所選的波函數和得到的束縛能進一步計算了類氫雜質體系的光致電高截面
  5. In the second part, using the wave function and binding energy obtained from the first part, the photoionization cross - section of the impurity is calculated

    在第二部分，我們採用第一部分所選的變分波函數和得到的束縛能進一步計算了類氫雜質體系的光致電離截面。
  6. The research for the binding energy of d - centers is important to the transition energy and the optical and the magneto - optical absorption of shallow center d - there have been some theoretical and experimental investigations [ 1, 4, 5, 6, 7, 8 ] about three - dimensional and two - dimensional d - centers in magnetic field, but have no works discussed the d ~ centers in quantum wells in the strong magnetic field limited

    研究d ~ -中心各個態的束縛能，對于研究d ~ -中心各能級之間的躍遷和d ~ -中心的光學和磁光吸收、新型器件的研製與開發都有很大的意義。
  7. We fhd that the energies have the following important properties : ( 1 ) the energies are positive and monoton - ically decrease to their arnowitt - deser - misner ( adm ) masses at spatial infinity ; ( 2 ) the energies have the correct newtionial limiting, and include the binding energies from the gravitation ^ electrostatic charge and dilaton charge, respectively ; ( 3 ) martinez ' s conjecture is valid for such black holes

    結果表明該能量具有如下幾個重要特徵： （ 1 ）該能量是正定的，且隨徑向坐標單調遞減，在無窮遠處為黑洞的adm質量； （ 2 ）該能量具有正確的牛頓極限，並包含有分別來自於引力、靜電荷和伸縮子荷的束縛能； （ 3 ） martinez猜測對這些黑洞依舊成立。
  8. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  9. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  10. In low - dimension structure, the exciton binding energy will be lager than bulk material because of quantum effects, so excitons play an important role in optical characteristics of low - dimension zno

    在低維結構中，由於量子限制效應，激子束縛能會變得更大，因而在低維zno材料中，激子發光在其光學特性中起著舉足輕重的作用。
  11. Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices

    由於氧化鋅具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，因而被認為是製作紫外半導體激光器的合適材料。
  12. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
  13. This direct band - gap material has a large exciton binding energy ( 60mev ), which permits excitonic recombination even at room temperature. thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions

    它有較高的激子束縛能（常溫下為60mev ） ，使得其在室溫下可以發射紫外激光，因此作為新一代的半導體發光材料受到廣泛關注。
  14. We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900. the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900, suggesting that the film quality can be improved by annealing process

    當退火溫度為900時獲得了高質量的氧化鋅薄膜，光致發光譜的半高寬為94mev ，通過變溫實驗得到激子束縛能為59mev ，表明退火過程提高了薄膜的質量。
  15. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  16. In 1990s, a calculation of the ground - state energy of an exciton confined in a cylindrical quantum wire in the presence of a uniform magnetic field is reported as a function of wire radius, using a variational approach by gang li, spiros v. branis and k. k. bajaj. a. balandin and s. bandyopadhya present variational calculations of the ground - state exciton binding energy and exciton radius in a quantum wire subjected to an external magnetic field. these studies have been primarily responsible for our current understanding of the nature of excitonic states in a quantum wire subjected to an external magnetic field

    九十年代中期，人們就開始了關于在外加磁場時量子線中激子特性的研究， gangli ， spirosv . branis和k . k . bajaj利用變分法，對于圓柱形的量子線中激子的基態束縛能進行了計算，發現對於一個給定的磁場值，激子的基態束縛能比不加磁場時變大。
  17. Zno is a directed band semiconductor with a big binding energy. it has gained substantial interest because its large exiton binding energy ( 60mev ), which could lead to lasing action based exiton recombination even above room temperature, such as led, ld and so on

    Zno是一種寬禁帶的直接帶隙半導體材料，具有非常高的激子束縛能（ 60mv ） ，即使在室溫條件下激子也不會分解，因此可以被用作光發射器件，如led和ld等。
  18. In this work, the copper binding capacity of several complexing agents of known stability constants was determined.

    在這一工作中，測定了幾種已知穩定常數的絡合劑對銅的束縛能力。
  19. ( 2 ) when the impurity in the center of the well, the binding energy of the impurity is decreased as the strength of applied electric field increased

    （ 2 ）當施主離子位於勢阱中心時，雜質的束縛能隨著電場強度的增大而減小。
  20. We process calculations as the following : we calculate the binding energies of excitons in a square quantum - well wire in presence of a magnetic field for finite and infinite potential barrier case respectively

    A . balandin和s . bandyopadhyay也是利用變分法，採用二能帶模型計算了在外加磁場時的量子線中激子的基態束縛能。
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