柱狀晶粒 的英文怎麼說
中文拼音 [zhùzhuàngjīnglì]
柱狀晶粒
英文
columnar grain-
Suitable polycrystalline znsxse1 - x film with zinc sulfide cubic structure and ( 111 ) preferred orientation that provided a good matching with the requirements of lclv were deposited on ito coated glass by mbe method. room temperature photo - responsivity measurements performed on these thin films show that
相比于用zns和se為生長源制備的znsxsel x薄膜，採用zns和znse化合物為源材料的實驗方法制備出的薄膜性能更優良，其晶粒尺寸普遍增大，柱狀晶形更完整。The results show that under the same lapping conditions the si3 n4 ball has the lowest material removal rate and the best roundness and roughness, followed by zro2, al2o3, and sic ball
結果表明：在相同的研磨條件下，具有長柱狀晶粒的氮化硅陶瓷球加工速率最低，但圓度和表面粗糙度最容易控制；氧化鋯和氧化鋁陶瓷球表面質量次之，碳化硅陶瓷球加工速率最高，圓度和表面粗糙度最難控制。Determined by dsc. whereafter, the surface micro - morphology of both sides of tini sma thin film deposited on glass was investigated by atomic force microscope ( afm ), and the difference of morphology between the two sides is observed. it has been shown that, in the growing surface of sputtered tini film, the trend of grain to accumulating along the normal direction like a column is clearly observed, and the grain is very loose which resulted in more microcavities, but in the surface facing to glass substrate, grain is so compact that there are hardly microcavities
通過濺射法，在玻璃襯底上淀積了tini薄膜，並在600進行了真空退火， dsc法測得其馬氏體逆相變峰值溫度為75 ，利用原子力顯微鏡，對玻璃基tini形狀記憶合金薄膜的襯底面與生長面進行了表面微觀形貌分析，發現：生長面晶粒呈現出沿薄膜法線方向柱狀堆積的趨勢，晶粒緻密性差，微孔洞多；而襯底面晶粒緻密，幾乎沒有微孔洞存在。Abstract : the crystal structures obtained by static solidification and vibration solidification were compared. it was showed that, in the case of vibration solidification, the orientation growth of the columnar crystal was not obvious, the equiaxial crystal appeared more early. the grains of both types of crystals were quite fine, hardness in the full section was relatively high, and the hardness distribution was uniform. in the former case, the solute segregation in dendritical austenite more severe, and there were lumps of distortion inclusion
文摘:對球鐵金屬型靜凝固與振動凝固的結晶組織對比表明：後者柱狀晶方向性生長較弱，等軸晶出現較早，且兩者的晶粒均較細，全斷面硬度較高且分佈均勻；前者枝晶奧氏體內溶質偏析大，有畸變夾雜團塊。The effect of deposited condition, include substrate temperatures, different substrates and annealing on the structural properties of zno films has been studied in considerable detail. it is found that the optimal conditions to deposit zno are below : the substrate temperature of 450c, the substrate of sapphire. the sample on this condition is 0. 3491
通過分析襯底溫度、不同襯底和退火對樣品結構的影響，得到了樣品的最佳制備條件：襯底溫度450 、藍寶石襯底，此條件下制備的樣品具有高度（ 002 ）取向性， （ 002 ）衍射峰半高寬僅僅0 . 3491 ，原子力顯微鏡（ afm ）分析表明zno薄膜具有密集堆積的均勻柱狀晶粒。A - sic, p - sic and little p - si3n4 are main grain phase when heat treating temperature is 1700
柱狀晶的強度以及對晶粒的細化而對斷裂韌性產生影響。Sem results show tin films appear compact and plane in different n2 partial pressure, and there is no big crystal grain appearance on the surface of tin films. tem and afm results tin films have the column structure, and the surfaces of the films are accumulated by crystal grain. in the second part of the thesis the effect of heat treatment processing on the optical properties and structure of the tin films is studied
Tem測試結果顯示，薄膜表面是由tin晶體顆粒堆積在一起，呈柱狀結構afm測試結果表明， tin薄膜呈柱狀結構；在氮氣分壓較小時， tin薄膜表面比較平整，顆粒細小；隨著氮氣分壓的增加， tin薄膜表面顆粒逐漸增大；相同氮氣分壓下，氬氣分壓較小時制備的tin薄膜較為緻密。The effect of annealing condition such as temperature, time and vacuum on microstructure of vo2 films was studies. the crystalline vo2 films can be obtained after annealing at 450 3 hour in 10pa vacuum. the conductivity of films increases linearly with increasing the temperature
對退火溫度和時間以及真空度的影響進行了研究，在低真空（ 10pa ） 450退火3小時后得到的vo _ 2薄膜，晶體顆粒呈長方柱狀，具有良好的結晶性能。分享友人