柱狀解理 的英文怎麼說

中文拼音 [zhùzhuàngjiělǐ]
柱狀解理 英文
columnar cleavage
  • 狀 : Ⅰ名詞1 （形狀） form; shape 2 （情況） state; condition; situation; circumstances 3 （陳述事件或...
  • 解 : 解動詞（解送） send under guard
  • 理 : Ⅰ名詞1 （物質組織的條紋） texture; grain （in wood skin etc ） 2 （道理;事理） reason; logic; tru...
  1. The general situation and progress of magnetic dipole theoryresearch during recent twenty years in china were introduced briefly including magnetic dipole ; linear and strip magnetic dipoles of finite lengths ; magnetic force on a magnetic particle ; the effect of magnetizing field orientation on the revelation of defect by magnetic particles ; longitudinal magnetization of rod, tube and cuboid steel ; the relationship between the slot depth in a workpiece and magnetic leakage field ; the cause of stray magnetic pattern along base apex edges of a workpiece magnetized circumferentially ; the analytic expression for the magnetic leakage fields inside and outside the slot on the cylindrical surface of a disc ; and the effect of a needle - like magnetic medium on the magnetic force between two point magnetic charges

    簡述20年來中國無損檢測中磁偶板子理論研究的概況和進展，主要介紹磁偶極子，有限長磁偶極線和極帶，磁粉顆粒的受力，磁化場方向對磁粉顯現缺陷的影響，棒料、管材和方鋼的縱向磁化，工件表面溝槽深度對其引起漏磁場的影響，周向磁化時工件底棱上的雜亂顯示成因，圓盤邊緣柱面上溝槽內外漏磁場的解析表達式和針狀磁介質對兩個點磁荷間磁力的影響等。
  2. The opening stress and the life of crack growth is calculated and compared with the test results and the experience formula. the feasibility of the newman theory of opening stress used in the high strength steel is validated. then through the slice synthesis method, the three dimension surface crack of the weld joint of cone - cylinder is decomposed into many plane through cracks

    本文將基於裂紋閉合現象建立的帶狀屈服模型，用在平面貫穿裂紋中，計算此時的裂紋張開應力和疲勞裂紋擴展壽命，與試驗結果和經驗公式比較，驗證newman裂紋張開應力理論在高強鋼中的可行性；然後，用切片合成法，把潛艇結構凸錐柱結合殼焊縫處的三維表面裂紋分解成平面貫穿裂紋，用帶狀屈服模型的理論來分析平面貫穿裂紋，得到裂紋沿深度方向的擴展速率，進而得到潛艇結構的疲勞壽命。
  3. Abstract : the general situation and progress of magnetic dipole theoryresearch during recent twenty years in china were introduced briefly including magnetic dipole ; linear and strip magnetic dipoles of finite lengths ; magnetic force on a magnetic particle ; the effect of magnetizing field orientation on the revelation of defect by magnetic particles ; longitudinal magnetization of rod, tube and cuboid steel ; the relationship between the slot depth in a workpiece and magnetic leakage field ; the cause of stray magnetic pattern along base apex edges of a workpiece magnetized circumferentially ; the analytic expression for the magnetic leakage fields inside and outside the slot on the cylindrical surface of a disc ; and the effect of a needle - like magnetic medium on the magnetic force between two point magnetic charges

    文摘:簡述20年來中國無損檢測中磁偶板子理論研究的概況和進展，主要介紹磁偶極子，有限長磁偶極線和極帶，磁粉顆粒的受力，磁化場方向對磁粉顯現缺陷的影響，棒料、管材和方鋼的縱向磁化，工件表面溝槽深度對其引起漏磁場的影響，周向磁化時工件底棱上的雜亂顯示成因，圓盤邊緣柱面上溝槽內外漏磁場的解析表達式和針狀磁介質對兩個點磁荷間磁力的影響等。
  4. The principle and the application of liquid crystal light valve ( lclv ) and the development of the photoconductor of lclv have been reviewed in this paper. the growth mechanism of amorphous silicon film is analyzed. the resolution of the photoconductor that is affected by the lateral diffusion of the photo - carrier in photoconductor layer is also analyzed

    本文介紹了液晶光閥光導層的發展、液晶光閥的工作原理及應用，分析了非晶硅薄膜的生長機制以及載流子的橫向擴散對解析度的影響，詳細研究了nc - si a - si ： h柱狀結構復合光導層液晶光閥的制備工藝。
  5. The ratma can calculate the electromagnetic scattering of multiple cylinders, and can be used in remote sensing. in chapter 2 simply derivation of the ratma is given by the addition theorem, and the general t matrix of single cylinder is deduced. the worked out examples show th e effectiveness of the ratma in the analysis of the scattering field of single cylinder or multiple cylinders

    由於遞推t矩陣法不僅可以計算多個柱體或不同形狀柱體的散射，而且可計算遙感上三維物體的散射，在第二章中，利用加法定理，簡要地推導了遞推t矩陣法，並用解析法推出了單個圓柱體在各種情況下的t矩陣（此t矩陣對導體和介質圓柱體的散射場計算都適用） ，最後計算了單個導體圓柱和兩個不同大小介質圓柱體的散射場。
  6. The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h

    本文根據柱狀結構存在各向異性的特點，並根據半導體物理知識，推出光導層光生載流子橫向最大擴散長度（該擴散長度與液晶光閥光導層解析度直接相關）與薄膜橫向和縱向電導率關系的表達式為：由於a - si ： h在al金屬的誘導作用下在不高於250的溫度下即開始晶化，本文對用金屬al誘導非晶硅晶化制備的nc - si a - si ： h薄膜進行研究。
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