柵極脈沖 的英文怎麼說

中文拼音 [zhàmàichōng]
柵極脈沖 英文
grid impulse
  • : 柵名詞(柵欄) railings; paling; palisade; bars
  • : i 名詞1 (頂點; 盡頭) the utmost point; extreme 2 (地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • : 脈名詞1. (動脈和靜脈的統稱) arteries and veins2. (脈搏的簡稱) pulse 3. (像血管的組織; 連貫成系統的東西) vein
  1. In gan hemt drain pulse current collapse experiments, drain current under pulse condition collapsed about 50 % than direct current condition and the pulse signal frequency affected little on current collapse. when gate voltage is small, the relationship between pulse width and drain current is i0 ( + t / 16 )

    在ganhemt漏電流崩塌測試中,發現條件下漏電流比直流時減小大約50 % ;信號頻率對電流崩塌效應影響較小;當壓較小時,隨著寬度的改變漏電流按i0 ( + t / 16 )的規律變化。
  2. In gan hemt gate pulse experiments, drain current under pulse conditon collapsed about 47 % than direct current condition and the pulse width affected little on current collapse. the relationship between drain current and pulse frequency is ncoxw [ m + ( n + k ? ) vgs + ( n + k ? ) vgs2 ] ( vgs - vth ) 2 / l

    在ganhemt柵極脈沖電流崩塌測試中,觀察到條件下漏電流比直流情況下減小了47 % ;隨著信號頻率的改變,漏電流按ncoxw [ m + ( n + k
  3. The feedback of the output voltage is the major control loop. to achieve better frequency response and disturbance rejection of the input voltage, a input voltage feed - forward system is introduced in control loop. the duty - cycle of pwm applied at the gate of power mosfet is modulated by both input and output voltage

    該晶元採用的控制方式為電壓型pwm (寬度調制, pulsewidthmodulation )控制方式,以輸出電壓反饋作為主要控制參量,同時為了提高晶元對輸入電壓擾動的響應速度,採用了輸入電壓前饋方法,將輸入電壓因素引入了反饋控制環中,通過對輸入輸出電壓的檢測,控制加在功率mos管電壓上矩形的占空比,進而調節輸出電壓。
  4. The preliminary conclusion shows that the maximum rate of compression ratio changes is about 2 % and the change rate is less when the peak - to - valley value of wavefront aberration is less than a quarter of wavelength and incident angle is properly

    壓縮光對系統達到衍射限時,在選擇適當的入射角度時,光波像差所引起的壓縮比變化並不大。
  5. The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase. this could be mainly due to the influence of surface states

    Gaasmesfet動態擊穿特性測試結果表明, gaasmesfet的擊穿電壓隨與漏上所加電壓寬度的增大而增大,這主要是因為表面態的原因。
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