極限電壓 的英文怎麼說

中文拼音 [jíxiàndiànyā]
極限電壓 英文
limit voltage
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 限 : Ⅰ名詞（指定的范圍; 限度） limit; bounds Ⅱ動詞（指定范圍, 不許超過） set a limit; limit; restrict
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 壓 : 壓構詞成分。
  • 極限 : 1 （最高的限度） the limit; the maximum; the ultimate limit; limitation; extremity; tipping point...
  • 電壓 : voltage; electric tension; electric voltage
  1. The outside of this chip adopts boost structure to drive up to seven white leds with the input voltage ranging from 3v to 5v. series connection of the leds provides identical led current resulting in uniform brightness

    電路的電源輸入在3v 5v變化，採用boost電路結構升壓，在極限情況下最多可驅動七個白光led ，由於led串聯，因此各led電流完全匹配，亮度一至。
  2. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  3. Linear induction motor is an important kind of machines which have some merits such as simple structure, low cost, durability, convenience for maintenance etc. the subject of this thesis is to study a big circular ring linear induction motor, and the major works in this thesis are summarized as follows : ( 1 ) considering the effects of the finite length of primary core, one - dimension analytical solution for the air gap field is cited in this paper. based on it, the single layer winding magnetic field is studied. considering whole - pitched and short - pitched winding configuration with odd poles and half - fulled slots in both ends, the double - layer winding magnetic field is analyzed, respectively

    本文對大圓環直線感應電機進行了深入細致研究，內容包括： （ 1 ）本文採用有限長行波面電流作用於有限長鐵芯上的模型，引用了氣隙磁場一維解，研究了單層繞組磁場，奇數極半填槽雙層繞組在採用整距和短距時磁場的分析、比較，簡單介紹了二維解； （ 2 ）用有限元軟體ansoft對大圓環直線感應電機空載氣隙磁場進行了靜態分析，並分析了結果； （ 3 ）用軟體進行了額定電壓下的瞬態分析，得到了轉矩，位移，轉速隨時間變化曲線圖，利用單極性霍爾元件測定轉速並與軟體計算結果進行了比較，採用等效電路法計算了堵轉時的最大電磁力並做實驗進行了驗證，由實驗測得了三相電流波形，並與計算結果進行了比較，對其不對稱性進行了定性分析。
  4. Dtv dual threshold voltage

    雙重極限電壓
  5. Under the result of the inverter ' s steady sate study, the limitation limited by two factors : the minimum time of opposing voltage and the ajustive range of power factor can be gained. a qualitative analysis method based on energy decomposing is applied to study the initialized energy

    在討論串並聯逆變器穩態工況的基礎上，從最小反壓時間和功率因數調節范圍兩個限制條件，求出允許的穩態運行極限負載，啟動電路在此極限負載下能可靠地啟動就足夠了，追求更高的啟動能力沒有實際意義。
  6. An entirely new structure of high voltage soi ldmos with located charge trenches in vertical and a lateral trench with a shape of u was studied. with lots of analysis on this new compound structure, the breakdown voltage was raised 30 % and size was reduced to 60 % of the common soi ldmos

    這樣，該復合結構不僅可突破普通高壓soimosfet器件的耐壓極限，同時也可以使器件尺寸減少30 %以上；是與國際水平同步的一項重要研究，對soi器件及其功率集成電路的研發具有重要的意義。
  7. Abstract : a vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices. simulation result shows that nearly 100 breakdown voltage of the plane junction can be realized

    文摘:提出一種二氧化硅/多晶硅/二氧化硅夾心深槽場限制環新結構來提高晶體管的擊穿電壓.模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100達到平行平面結的理想值
  8. Interrupters used in power switchgear, x - radiation limits for ac high - voltage power vacuum

    電力開關用交流高壓電力真空斷路器的x射線輻射極限
  9. Radio interference characteristics of overhead power lines and high - voltage equipment - methods of measurement and procedure for determining limits

    架空線和高壓電器無線電干擾特性.第2部分:極限值測定程序和方法
  10. Application of singular value decomposition method to analysis and prediction for voltage steady - state stability limit of sichuan power grid

    奇異值分析法對四川電網電壓靜穩極限的分析預測
  11. Integrated circuits require less power and lower voltages than the equivalent macroscopic circuits, consequently they operate at lower temperatures, and individual components may be closed together without exceeding the operating temperature limit

    參考譯文：集成電路比等效的分離元件電路功率小，工作電壓低，因而可以在較低的溫度下工作，電路中包含的單個元件可以緊靠在一起而不超過工作溫度極限。
  12. Blank detail specification - unidirectional transient overvoltage suppressor diodes ; german version en 150015 : 1992

    空白詳細規范.單向瞬時過電壓限制器二極體
  13. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  14. Blank detail specification : thyristor diodes, transient overvoltage suppressor ; german version en 150014 : 1996

    空白詳細規范:二極體可控硅整流器過電壓限制器
  15. The investigation and developing of lithium - ion batteries have attracted worldwide attention due to their excellent properties such as high cell voltage and specific capacity, and so on. remarking progress has been made on researching carbon anode materials

    鋰離子電池以電壓高、比容量大等優點倍受世人關注，對鋰離子電池的碳負極材料的研究已取得較大的進展，但正極材料中因鋰鈷氧化物價高而使其應用受到限制，開發新型的正極材料已是當務之急。
  16. Determine the voltage stability limit is an important job for the static voltage stability research

    在靜態電壓穩定的研究中，確定電壓穩定極限是一項非常重要的工作。
  17. A method, which is for computing the voltage stability limit based on pss / e, is presented in this dissertation

    本文提出了一種基於pss e的自定義語言iplan的靜態電壓穩定極限的計算方法。
  18. At the same time, the mathematical models of the electric field and the flow field distribution were established from the theory of electrostatic enhancement of heat transfer. employed finite differential method and over - relaxation iteration method, according to certain boundary conditions in the wire - plate electrode space, the electric field and the flow field in the wire - plate space were numerically simulated under different initial velocities of r11 stream and different magnitudes of applied voltage. the calculation results agreed with theoretical analysis satisfactorily

    同時從靜電強化換熱理論出發，建立了表徵線板電極間的電場和流場分佈的數學模型，並根據線-板電極間的邊界條件，利用有限差分法和超鬆弛迭代法，分別就不同氣流初速度和不同外施電壓的情況下，對線-板空間的電場和流場進行了數值模擬，計算結果與理論分析基本一致。
  19. Note : a maximum is specified that is the most - positive value of low - level input voltage for which operation of the logic element within specification limits is to be expected

    注：在限定的工作條件下，所規定的最大輸入電壓是極不容易保證邏輯單元所期望的低電平輸入電壓的最大正電壓值。
  20. Note : a minimum is specified that is the least positive value of high - level input voltage for which operation of the logic element within specification limits is to be expected

    注：在限定的工作條件下，規定的最小輸入電壓是極不容易保證邏輯單元所期望的高電平輸入電壓的最小正電壓值。
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