機械拋光片 的英文怎麼說

中文拼音 [jīxièpāoguāngpiān]
機械拋光片 英文
mechanically operated slice
  • 機 : machineengine
  • 械 : 名詞1. （器械） tool; instrument 2. （武器） weapon 3. [書面語] （枷和鐐銬之類的刑具） fetters, shackles, etc
  • 拋 : 動詞1. （扔; 投擲） throw; toss; fling 2. （丟下; 拋棄） leave behind; cast aside; abandon
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  • 片 : 片構詞成分。
  • 機械 : 1. （利用力學原理組成的各種裝置） machinery; machine; mechanism 2. （死板; 刻板） mechanical; inflexible; rigid
  1. Chemical - mechanical - polishing ( cmp ) has been rapidly developing and finding extensive applications in the integrated circuit ( ic ) manufacturing industry for processing hard disk of computer and silicon wafer with super - smooth and flawless surface

    集成電路（ ic ）製造工業中，化學機械拋光（ chemicalmechanicalpolishing ， cmp ）廣泛應用於計算機硬盤片、硅晶片超光滑無損傷表面的加工。
  2. The scratching test was carried out with a single diamond tool to study the removal mechanism of litao3 wafer by load. the ae signals were measured, and the scratched surfaces of litao3 wafers in different conditions were observed by metallography microscope

    通過單顆粒金剛石壓入鉭酸鋰晶片光滑表面的劃痕實驗，研究鉭酸鋰晶片的機械力學性能和斷裂破壞情況，尋找合理的拋光壓力。
  3. King - strong enterprises was established in october, 1991, which governs the jingang ceramic mould factory, xiongdayang grinding factory, jingang diamond tools factory, king - strong ceramic saw blade, jingang polishing and grinding factory and jingang milling factory, colligating ceramic mechanical equipment manufacturing, ceramic mould, diamond tools, polishing and grinding tools and so on as an integration enterprise for production design, processing and installing service

    勁剛企業建立於1991年10月，下轄勁剛陶瓷模具廠、勁剛鉆石工具廠、勁剛拋光磨具廠、勁剛磨料廠、勁剛陶瓷鋸片廠、雄大洋磨具廠，是集陶瓷機械設備製造、陶瓷模具、金剛石工具、拋光磨具等產品設計、加工安裝、服務為一體的綜合性企業。
  4. The cmp experiment was carried out systematically on litao3 wafer. the polished surface foughness and material removal rate in different polishing conditions were measured and the effects of polishing pad material and its condition, pressure, rotating speed of the polishing plate, the type and size of abrasive, and the properties of the polishing slurry on the surface routhness and material removal rate were analysed in details

    通過對鉭酸鋰晶片的化學機械拋光過程的實驗研究，通過測量鉭酸鋰晶片在不同拋光條件下的表面粗糙度和材料去除率，詳細分析了拋光墊材料和狀態、拋光壓力、拋光盤轉速、磨料種類及粒度、拋光液組成等幾個因素對拋光表面質量和材料去除率的影響規律。
  5. Chemical - mechanical polish ( cmp ) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. it is used during the fabrication process

    化學-機械拋光（ cmp ） -平圓晶光拋和整片的工藝，採用化學移除和機械拋。式方種兩光此工藝在前道工藝中使用。
  6. The analysed results show that the reasonable rotating speed np and distance e between workpiece plate center and polishing plate center are 60rpm and 100mm on ultra - precision surface polishing machine with correction rings, respectively

    適合鉭酸鋰晶片化學機械拋光的拋光盤轉速為n _ p = 60rpm ，工件盤中心到拋光盤中心的距離為e = 100mm 。
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