橫向電場 的英文怎麼說

中文拼音 [héngxiàngdiànchǎng]
橫向電場 英文
transverse electric field
  • 橫 : 橫形容詞1. （蠻橫; 兇暴） harsh and unreasonable; perverse 2. （不吉利的; 意外的） unexpected
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 場 : 場Ⅰ名詞1 （平坦的空地 多用來翻曬糧食 碾軋穀物） a level open space; threshing ground 2 [方言] （...
  • 橫向 : broadwise; infeed; crossrange; abeam;transverse; transverse direction; cross; crosswise; lateral;...
  1. For obtaining the numeral solutions of round elastic plates in axisymmetrical deformation with varying - thickness in nonlinear deformation in the unsteady electromagnetic field and mechanical field, by establishing the equations of motion, the equations of distortion, the equations of lorentz force, the equations of electronic dynamic mechenical, and adopting iterative method, we gained the nonlinear magneto - elastic calculation method and outcome of current - carrying shell, and gained the influencing degree toward mechanical parameter of varying thickness round ferreous plates in the electromagnetic field and mechanical field

    摘要為了獲得內邊界固定的環形導電薄板在均布力與橫向磁場作用下的變形問題的數值解，通過建立運動方程、變形方程、電動力學方程和洛侖茲力方程，運用迭代法得出了載流板殼的非線性磁彈性的計算方法和結果，以及機械場、電磁場對鐵質變厚度圓板各力學參量的影響程度。
  2. Superconductivity - ac loss measurements - total ac loss measurement of cu nb - ti composite superconducting wires exposed to a transverse alternating magnetic field by a pickup coil method

    超導性.交流電損耗測量.用拾波線圈法測量暴露于橫向交流磁場的cu nb - ti合成超導導線的交流電總損耗量
  3. Superconductivity - part 8 : ac loss measurements ; total ac loss measurement of cu nb - ti composite superconducting wires exposed to a transverse alternating magnetic field by a pickup coil method

    超導性.第8部分:交流電損耗測量.用拾波線圈法測量爆露于橫向交流磁場中合成超導導線的交流電總損耗量
  4. Superconductivity - part 8 : ac loss measurements - total ac loss measurement of cu nb to composite superconducting wires exposed to a transverse alternating magnetic field by a pickup coil method

    超導性.第8部分:交流電損耗測量.用拾波線圈法測量暴露于橫向交流磁場的銅鈮復合超導導線的交流電總損耗量
  5. The fluctuating mangnetic field cutting across the turns or loops of wire of the secondary coil sets up an electrical pressure or voltage in these loops.

    起伏變化的磁場橫向切割著次極線圈的線匝和線環時，會在這些線環中引起電壓。
  6. The fluctuating magnetic field cutting across the turns of loops of wire of the secondary coil sets up an electrical pressure or voltage in these loops.

    起伏變化的磁場橫向切割著的次級線圈的線匝或線環時，會在這些線環中引起電壓。
  7. In chapter four, using the quantum statistics method we study the cohesion of a metallic nanowire irradiated under electromagnetic wave based on the results in chapter three. we obtain that the cohesion force is effected notably only when the frequency of electromagnetic field is at the vicinity of the energy span of the lateral levels of the nanowire

    第四章以第三章的工作為基礎，用量子統計的方法，分析了太赫茲電磁波部分輻照對金屬納米線內聚力的影響，得到了只有當外場頻率與橫向模式共振時內聚力才有顯著變化的結論。
  8. During the research of the novel high - voltage soi lateral structure, we established its blocking theory based on poisson equation, which classifies its blocking mechanism by describing the potential distribution in the drift region very well when the device is in the blocking state

    在新型橫向高壓器件結構tsoi的研究中，本文通過二維泊松方程建立其解析理論，正確描述了漂移區中電場的分佈，並闡明其耐壓機理。
  9. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  10. For strained si pmosfets, the hole mobility is not only determined by the tensity of strain, but also related to the strain types, which are uniaxial compressive strain and biaxial tensile strain. when electric field is high enough, the hole mobility will be deteriorated in pmosfets under biaxial tensile strain, however, in the case of uniaxial compressive strain, the deterioration will never occur

    經模型分析發現，應變硅pmosfet空穴遷移率與應力作用方式有如下關系:當橫向電場較高（ > 5 105v / cm ）時，雙軸張應力作用下的應變硅pmosfet的空穴遷移率將發生退化，而單軸壓應力器件則不會受到影響。
  11. A current is sent transversely through the liquid metal, in a direction at right angles to a transverse magnetic field.

    使電流橫穿過液態金屬，其方向又與橫向磁場垂直。
  12. Based on the theories of hybrid / mixed finite element method, the generalized energy functional including stress, mechanical displacement, electric displacement, electric field and electric potential is used, with the electric - potential relations and the constitutive equations of piezoelectric materials constrained, hybrid energy functional including mechanical displacement, electric potential and stress is gained. moreover, splitting in - plane components and transverse components, the mixed energy functional in which mechanical displacement, transverse stresses and electric potential as basic variables is derived. with the use of surface stress parameters of sub - elements, the continuity of transverse stress at interfaces between layers is obtained

    在回顧雜交混合有限元理論的基礎上，從包括位移、應力、應變、電勢、電位移、電場強度六個未知量的廣義壓電材料能量泛函出發，通過約束電場強度?電勢關系、應力與應變及電場強度的關系，得到僅包括位移、電勢、應力三個未知量的雜交變分泛函，利用一般層合板的雜交混合變分原理，分離面內分量和橫向分量，導出以位移、橫向應力、電勢為未知量的壓電層合板的修正變分泛函，作為壓電層合板的雜交元列式的理論基礎。
  13. And the subroutine is developed to add the periodic condition in the commercial 3d fem software. 3d electromagnetic field analysis is done to analyze the magnetic flux distribution in the tfpm. base on the field analysis, the mathematical model is given

    採用簡化的三維電磁場計算方法對橫向磁通永磁電機內部磁通分佈進行了研究，計算了各部分的磁通密度分佈和漏磁通的走向，得到了電機的空載漏磁系數及空載反電動勢以及主要的漏磁通分量。
  14. As the 3d electromagnetic field calculation region of the tfpm is not suitable for the periodic condition, the calculation must be done for the whole region. it takes too much time. firstly, a method is adopted to simplify the 3d model with periodic condition

    本文的工作主要包括以下幾部分內容:首先對本文研究的橫向磁通電機的三維電磁場分析模型進行了簡化，提出了對不符合周期條件的求解區域在工程設計允許的范圍內進行簡化處理的方法，同時對商業軟體進行了二次開發，編制了周期條件處理程序，減少了三維電磁場計算時間。
  15. Using time - dependent mode matched scattering matrix method and based on the theory of the interaction between atom and electromagnetic field, we predict the effect that the longitudinal transport of electron is partly blocked by the lateral emitting electromagnetic wave and give detail analysis of the mechanism and the feature of the effect

    第三章我們以光和原子相互作用理論為基礎，用含時模式匹配散射矩陣方法研究了直量子線在太赫茲電磁場部分輻照下的電子輸運性質，並得出橫向電磁輻射對電子縱向運動的阻塞效應。
  16. Chapter one of the thesis introduces the vacuum structure, operation principle and electric arc characteristic of the vacuum killing arc room concisely, and retrospected the development of the vacuum killing arc room briefly, and indicated the research purpose and meaning of thesis at the same time. chapter two introduces the design process and manufacturing technology of the vacuum killing arc room possessing cup form horizontal magnetism touch head structure. electric magnetic field finite element, an analytical soft of ansoft company, and msc non - linear finite element, an analytical soft of marc of company, have been adopted to analyze the distribution state of the horizontal magnetic field between the touch heads, electric field intensity distribute state and temperature rise situation which the touch head produced

    論文的第一章首先是對真空滅弧室的結構、工作原理和電弧特性進行了簡明的闡述，同時對真空滅弧室的發展做了一個簡要的回顧，並表明了本論文的研究目的和意義;第二章介紹了杯狀橫磁真空滅弧室的設計過程和製造工藝;採用ansoft公司電磁場有限元分析軟體和msc公司marc非線性有限元分析軟體分析了觸頭結構產生的橫向磁場在觸頭間的分佈狀況、電場強度分佈狀況以及溫升情況。
  17. Then, a comprehensive an ~ tlyticai model for coulomb scattering in 6h - sic inversion layers is presented considering all the coulomb effects of the charged - centers near the sicisio2 interface. this model takes into account the effects of the charged - centers correlation

    當有效橫向電場較低時，庫侖散射在sic反型層的電子輸運中起主要散射作用，而當有效橫向電場升高時，表面粗糙散射的作用會變得愈來愈顯著。
  18. Both the theoretical simulation and experiment results show that the relationship between eff and eeff in strained - si is similar to the one in bulk si. the mobility reaches its maximum when eeff equals to 2 105v / cm

    理論分析和實驗結果表明，應變硅載流子遷移率與橫向電場eeff的函數關系與體硅材料類似，峰值遷移率所對應的eeff為2 105v / cm 。
  19. Calculation results show that 90 % carriers will populate in the first ten subbands when effective field is larger than 105v / cm

    計算表明，當橫向電場為105v / cm時，前十個子能帶上的載流子濃度占總濃度的90 % 。
  20. A new method for magnification of output torque of transverse - flux switched reluctance machines

    一種提高橫向磁場開關磁阻電機輸出轉矩的新方法
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