氣相外延生長 的英文怎麼說

中文拼音 [qìxiāngwàiyánshēngzhǎng]
氣相外延生長 英文
vapor phase epitaxial growth
  • 氣 : Ⅰ名詞1 （氣體） gas 2 （空氣） air 3 （氣息） breath 4 （自然界冷熱陰晴等現象） weather 5 （氣味...
  • 相 : 相Ⅰ名詞1 （相貌; 外貌） looks; appearance 2 （坐、立等的姿態） bearing; posture 3 [物理學] （相位...
  • 外 : Ⅰ名詞1 （外面） outside; external side 2 （外國） foreign country 3 （以外） besides; beyond; in ...
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 氣相 : gas phase
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  1. Abstract : yanchang series is a typical low permeability reservoir, and its favourable sandstone reservoir is delta facies. heavy compaction, cementation and heterogeneity exist in it. according to the analysis of the main control factors of forming the secondary pore, it is held that the secondary pore in longdong area is controlled by both favorable facies belt and abnormal formation pressure. it is also held that the formation of the abnormal formation pressure is due to the dewatering of the clay mineral during diagenesis because the dewatering time is identical with the decarboxylation time of organism. organic acid and co2 are driven to adjacent favorable reservoirs under the abnormal formation pressure, and a lot of secondary pore is produced in the runners. from the present exploration result, it is useful to predicting the development of secondary pore to study the distribution of abnormal formation pressure

    文摘:陜甘寧盆地三疊系延長統是國內外典型的低滲特低滲油田，儲集層主要為三角洲砂體，壓實作用和膠結作用強烈，儲層非均質性非常嚴重，因此預測次生孔隙發育帶是尋找油氣聚集帶的關鍵.通過對陜甘寧盆地隴東地區延長統次生孔隙形成的主控因素分析，認為陜甘寧盆地延長統次生孔隙的形成除了受沉積有利相帶控制外，還與地層異常壓力的作用密切相關.研究認為隴東地區異常壓力的形成機理主要由於成巖過程中粘土礦物脫水作用.粘土礦物大量脫水時間正好與有機質脫羧期相一致，從而在異常壓力作用下將生油巖中的大量有機酸及co2帶到與之相鄰的儲集層中，並沿著有利儲集相帶運移，在酸性水經過的地方形成大量的次生孔隙，為後期油氣運聚提供有利通道及宿住空間，從現今的勘探結果來看，通過研究地層異常壓力縱橫向分佈特徵，並結合有利相帶研究預測次生孔隙育良帶是行之有效的方法
  2. Yanchang series is a typical low permeability reservoir, and its favourable sandstone reservoir is delta facies. heavy compaction, cementation and heterogeneity exist in it. according to the analysis of the main control factors of forming the secondary pore, it is held that the secondary pore in longdong area is controlled by both favorable facies belt and abnormal formation pressure. it is also held that the formation of the abnormal formation pressure is due to the dewatering of the clay mineral during diagenesis because the dewatering time is identical with the decarboxylation time of organism. organic acid and co2 are driven to adjacent favorable reservoirs under the abnormal formation pressure, and a lot of secondary pore is produced in the runners. from the present exploration result, it is useful to predicting the development of secondary pore to study the distribution of abnormal formation pressure

    陜甘寧盆地三疊系延長統是國內外典型的低滲特低滲油田，儲集層主要為三角洲砂體，壓實作用和膠結作用強烈，儲層非均質性非常嚴重，因此預測次生孔隙發育帶是尋找油氣聚集帶的關鍵.通過對陜甘寧盆地隴東地區延長統次生孔隙形成的主控因素分析，認為陜甘寧盆地延長統次生孔隙的形成除了受沉積有利相帶控制外，還與地層異常壓力的作用密切相關.研究認為隴東地區異常壓力的形成機理主要由於成巖過程中粘土礦物脫水作用.粘土礦物大量脫水時間正好與有機質脫羧期相一致，從而在異常壓力作用下將生油巖中的大量有機酸及co2帶到與之相鄰的儲集層中，並沿著有利儲集相帶運移，在酸性水經過的地方形成大量的次生孔隙，為後期油氣運聚提供有利通道及宿住空間，從現今的勘探結果來看，通過研究地層異常壓力縱橫向分佈特徵，並結合有利相帶研究預測次生孔隙育良帶是行之有效的方法
  3. Due to great advantage of the excimer laser in photoelectron material, photoelectron technology research, so in this thesis, a xecl excimer laser is designed in order to solve some problem in semiconductor film, cmr film, quartz film and other kind of film application, optical etching field, interaction between laser and material, material plasma study. the parameters of the excimer laser is e also measured and analyzed

    因此本文以氣相沉積、外延生長、巨磁薄膜、金剛石及其它薄膜制備及后續的光刻，激光與物質的相互作用，等離子體研究為目的，研製獲得了激光脈寬18ns ，單脈沖能量150mj ，矩形光斑大小2cm 1cm ，束散角3mrad ，最高重復頻率5hz的xecl準分子激光器。
  4. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  5. At present the prevailing epitaxial growth techniques of gan are metalorganic chemical vapor deposition ( mocvd ), molecule beam epitaxy ( mbe ) as well as hvpe

    目前gan的外延生長技術一般採用有機金屬化學氣相外延法（ mocvd ） ，在藍寶石襯底的（ 0001 ）面上外延生長gan材料，另外還有分子束外延技術（ mbe ）及鹵化物汽相外延技術（ hvpe ）等。
  6. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。
  7. Sige simox ; 3. sige smart - cut and behavior of sige / si he terostructure implanted with hydrogen. sige film preparation : sige films were grown on silicon substrate using solid source molecular beam epitaxy ( ssmbe ), gas - solid source molecular beam epitaxy ( gsmbe ) and ultra high vacuum chemical vapor deposition ( uhvcvd ) technologies

    Sige薄膜生長方面：在熟悉各種薄膜外延技術的基礎上，採用了近年來發展較為成熟的固態源分子束外延（ ssmbe ） 、氣-固態源分子束外延（ gsmbe ） 、超高真空化學氣相淀積（ uhvcvd ）三種sige薄膜外延技術，在硅（ 100 ）襯底上外延生長了sige薄膜。
  8. In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy

    本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。
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