氧化物介質 的英文怎麼說

中文拼音 [yǎnghuàwùjièzhí]
氧化物介質 英文
oxide media
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 物 : 名詞1 （東西） thing; matter; object 2 （指自己以外的人或與己相對的環境） other people; the outsi...
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 氧化物 : oxide; oxyde; oxidizing material; oxidate
  • 氧化 : [化學] oxidize; oxidate; oxide; burning; rust; oxygenize; oxido-; oxy-
  1. The sterilizer takes advantage of high temperature disinfection principle, which destroys cell bioplasm, denatures protein, and concentrates electrolyte to kill microorganisms

    利用高溫乾熱對微生物有氧化、蛋白質變性、電介質濃縮引起中毒等作用。
  2. Water quality. evaluation of ultimate aerobic biodegradability of organic compounds in aqueous medium by determination of oxygen demand in a closed respirometer

    水質.通過在密閉呼吸器中測定需氧量來評價有機化合物在水介質中"最大"的生物降解力
  3. Water quality - evaluation of ultimate aerobic biodegradability of organic compounds in aqueous medium by determination of oxygen demand in a closed respirometer

    水質.通過測定在封閉呼吸器中的需氧量評定含水介質中有機化合物的最大需氧生物降解能力
  4. " water quality. evaluation in an aqueous medium of the " ultimate " aerobic biodegrability of organic compounds. method by analysis of biochemical oxygen demand closed bottle test. "

    水質.評價含水介質中有機化合物的"最大"需氧生物降解力.生化需氧量分析法
  5. The obtained biosensor exhibits high sensitivity, excellent reproductivity and good stability with substantially improved performance. part two describes the manufacture and characterization of glucose oxidase - silver sol - polyvinyl butyral modified platinum electrodes with tris ( 2, 2 ' - bipyridyl ) cobalt ( iii ) perchlorate as an electron transfer mediator in the glucose solution

    用納米ag溶膠固定god ，採用聚乙烯醇縮丁醛為輔助固酶膜基質修飾鉑絲電極，並以葡萄糖溶液中的co恤pyh （ cio4 ） 3為電子媒介體組成葡萄糖氧化酶生物傳感器。
  6. Group division : experiments were performed in 3 different conditions, i. e., normal 4 medium, high k * stimulated medium, and ca2 + - free medium. hippocampal slices from a same rat were then divided into 3 treatment groups : control group ? lices were oxygenated with 95 % o2 / 5 % cc > 2 and incubated at 35 ~ 36 ? for 30min ; hypoxia group ? lices were oxygenated and incubated on the same conditions as the control group, then the mixture gases change into 95 % o2 / 5 % co2 - hypoxic condition were remained for lomin ; ginkgolide b preincubation group ? lices will be preincubated at the normal oxygenated medium containing loomm ginkgolide b, 10 min later, repeated hypoxic treatment

    3實驗採用隨機區組設計，動物隨機分為三組，各組動物制備的海馬腦片分別進行三種不同介質的灌流實驗，即正常介質組、高k ~ +去極化組和無ca ~ （ 2 + ）組；各組中由同一隻動物製成的海馬腦片再隨機分到三個不同的處理組，即：正常對照組、低氧組和ginkgolideb預孵育組。
  7. Scas water quality. evaluation of the aerobic biodegradability of organic compounds in an aqueous medium. semi - continuous activated sludge method

    水質.含水介質中有機物化合物需氧生物降解性的評價.半連續活化污泥法
  8. The results showed that in scco2 cyclotrimerization of terminal acetylenes was carried out smoothly to regioselectively afford the corresponding benzene derivaties using pdbr2 as the catalyst

    研究結果表明：二氧化碳介質中使用溴化鈀為催化劑可以順利地催化炔烴發生環三聚反應，區域選擇性生成含苯環芳香族化合物。
  9. We can classify thin films into four groups : thermal oxides, dielectric layers, polycrystalline silicon, and metal films

    我們可以把薄膜分成四組：熱氧化物，介電質層，多晶硅，金屬薄膜。
  10. Xing su ( microelectronics and solid state electronics ) directed by prof. lin chenlu the fast development of information technology requires integrated circuit to be greater integrated, faster functioned, and lower power - consumed, that lead to continuous shrinkage of mos and dram feature size. and under this trend the thickness of mos gate dielectrics ( sio2 ) would soon scale down to its physical limit

    日益增長的信息技術對更高集成度、高速、低功耗集成電路的需求，驅使晶體管的尺寸越來越小，隨之而來的問題是作為mos柵氧化物和dram電容介質的sio _ 2迅速減薄，直逼其物理極限。
  11. Doc water quality - evaluation in an aqueous medium of the ' ultimate ' aerobic biodegradability of organic compounds - method by analysis of dissolved organic carbon

    水質.在含水介質中對有機化合物的「極值「有氧生物降解能力的評估，溶解有機碳
  12. In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient

    本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。
  13. Water quality - evaluation in an aqueous medium of the ' ultimate ' aerobic biodegradability of organic compounds - method by analysis of biochemical oxygen demand closed bottle test

    水質.用生化需氧量分析法評估水介質中有機化合物最大需氧生物降解能力封瓶試驗
  14. Methods of test for orthoboric acid boric acid, diboron trioxide boric oxide, disodium tetraborates, sodium perborates and crude sodium borates for industrial use - determination of matter insoluble in alkaline medium and preparation of test solutions of crude sodium borates

    工業用硼酸氧化硼四硼酸二鈉高硼酸鈉與粗硼酸鈉的試驗方法.粗硼酸鈉在堿性介質中不溶物測定和試驗溶液制備
  15. When deposit temperature is raised from 450 to 500, the size of nano - crystals is increased from l ~ 4nm to 5nm. a few 8162 nano - crystals are also found, which are derived from the amorphous oxide in the matrix. simultaneity, some special patterns appear while nano - crystals move and rearrange

    薄膜中的結晶程度隨沉積溫度的升高而提高，納米硅晶粒的尺寸由450時的1 4nm增大到5nm以上，氧化程度也隨之加深，非晶介質中的氧化物逐漸向氧化硅的晶態轉變，同時納米顆粒在晶粒遷移和重排過程中局部形成特殊形貌的團聚物。
  16. Ir - ta - ti metal oxide coated titanium anodes of variable composition were prepared by thermal decomposition. their micro morphorogies and electrochemical properties were characterized by scanning electron microscope, open circuit potential, cyclic voltammetry, consumption rate measurements and accelerated life test. the sem results indicated that all coatings were of a porous and cracked - mud microstructure influenced greatly by the composition of coatings. the electrochemical measurements showed that the ir - ta - ti ternary oxide - coated anodes exhibited excellent electrochemical activity and electrochemical stability in both acidic media and seawater which were affected by the composition and microstructure of the coatings. owing to good corrosion resistance and low consumption rate in seawater, metal oxde coated anodes belong to insoluble material, and can be potentially applid in impressed current cathodic protection systems as an anode

    採用熱分解方法在鈦基體上制備銥鉭鈦金屬氧化物陽極，用掃描電鏡對陽極塗層顯微形貌進行分析，通過強化電解壽命試驗、開路電位測試、消耗率試驗及循環伏安曲線研究了金屬氧化物陽極的電化學性能. sem分析結果表明銥鉭鈦金屬氧化物陽極塗層呈現多孔多裂紋形貌結構.隨陽極塗層組成不同，塗層顯微形貌表現出很大差異，這種差異直接影響陽極電化學性能.電化學性能試驗結果表明銥鉭鈦金屬氧化物陽極在酸性介質和海水中具有良好的電化學穩定性和電化學活性.此外，銥鉭鈦金屬氧化物陽極在海水中的消耗率很低，屬于不溶性的陽極材料，作為外加電流陰極保護用輔助陽極具有廣泛的應用前景
  17. Water quality - evaluation of ultimate aerobic biodegradability of arganic compounds in aqueous medium - caebon dioxide evolution test

    水質.水介質中有機化合物的極限需氧生物降解能力的評價.二氧化碳釋放試驗
  18. A comparison of the optical and mechanical performance is made between with iad and without iad. the researched thin films includes monolayer thin films and multilayer thin films. 1. the research of monolayer thin films in the paper, three mololayer thin films - tio2 ta2o5 nb2o5 oxide dielectric thin films are studied

    單層膜的研究研究的單層膜為tio _ 2 、 ta _ 2o _ 5 、 nb _ 2o _ 5等氧化物介質薄膜，對比研究了常規工藝下和離子輔助條件下它們的光學特性和機械特性。
  19. Tio _ 2 has been known as an n - type metal oxide semiconductor and an important inorganic function material. it can be used in fabricating medium material, photocatalytic films, reducing reflect coat, gas sensor, etc. tio _ 2 films had excellent performance with photocatalysis, resisting photo erode, difficult dissolution in acidity condition, innocuity and stabilization in light and soon on

    Tio _ 2是n型金屬氧化物半導體，是一種重要的無機功能材料，可用於製作電介質材料、光催化薄膜、減反射塗層、氣敏傳感器等。 tio _ 2薄膜具有優異的光催化性能，抗光腐蝕，在酸性條件下難溶，對光穩定，無毒等。
  20. Since metal - oxide - semiconductor ( mos ) device appeared, integration of integrated circuit ( ic ) expands as moore law. meanwhile the dimension of device scales down, the thickness of sio2 gate dielectric shrinks as the same law. but as the thickness of sio2 gate dielectric reaches at isa, the gate current rises very quickly and reaches at 1 10a / cm2

    自從金屬-氧化物-半導體（ mos ）器件出現以來，集成電路的集成度按照摩爾定律增加，相應地，器件的物理尺寸按照等比縮小的原則不斷縮小， sio _ 2作為柵介質的厚度不斷縮小，特徵尺寸在0 . 1 m以下的集成電路要求sio _ 2柵介質的厚度小於1 . 7nm 。
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