氧化錫化銦 的英文怎麼說

中文拼音 [yǎnghuàxíhuàyīn]
氧化錫化銦 英文
agsnoino
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 銦 : 名詞[化] （金屬元素） indium （im）
  • 氧化 : [化學] oxidize; oxidate; oxide; burning; rust; oxygenize; oxido-; oxy-
  1. ( 2 ) in ( no3 ) 3 was dissolved in acetylacetone in the mol ratio of l : 3. they were mixed for about 3 hours to obtain acetylacetone salts. then glycol methyl aether was added in the ratio of 1 : 40 to obtain indium oxide sol. sncl4 was dissolved in glycol methyl aether and then added into the indium oxide sol to prepare transparent and stable ito sol

    （ 2 ）通過將銦的無機鹽硝酸銦與乙酰丙酮按摩爾比1 ： 3 ，混合攪拌3h左右得到銦的乙酰丙酮鹽，然後按一定摩爾比加入乙二醇獨甲醚溶液，混合攪拌制得氧化銦溶膠，再將一定量的sncl _ 4溶入乙二醇獨甲醚，摻入氧化銦溶膠制得透明穩定的摻錫氧化銦溶膠（ ito溶膠） ，該溶膠性能穩定，易於成膜。
  2. Azo ( aluminums zinc oxide films ) which have many characteristics such as high ratio of performance to price and innoxious are the replacer of ito ( indium tin oxide films )

    摻鋁的氧化鋅薄膜（ azo ）具有性價比高、無污染等特點，是摻錫氧化銦（ ito ）的最佳替代產品。
  3. Nano indium, tin oxide etc. particles / polymer composite was studied. high transparence and electromagnetic shielded efficiency are asked. the transparency of organic glass is good, but it is nonconductor and has no shielded efficiency

    大課題採取無機-高分子納米復合技術路線，研製氧化銦、氧化錫等金屬氧化物納米粒子丙烯酸酯類聚合物納米復合材料，要求高透光、高電磁屏蔽。
  4. J. r. stevens et al., “ electrochromism of wo3 - based films in contact with a solid li - doped siloxane elastomer electrolyte, ” applied optics, 26, pp. 3489 - 3490, 1987

    鄭耀爵， 「以離子束濺鍍法制備氧化銦錫薄膜之光學、電學及可靠性質之研究， 」國立成功大學，碩士論文， 2003 。
  5. In those studying works, nano - composites of polymer were prepared for electromagnetic screening and transparent in military electronic units 、 apparatus 、 weapon equipments, electronic cabinets, to keep communications secrets for important offices 、 laboratory, designing technologic routes of inorganic nanoparticle / nano - composites of polymer, nano - stannum oxide, nano - indium stannum oxide were prepared

    本課題的研究針對軍用電子元器件、部件、武器裝備、方艙、通信保密、重要辦公室、實驗室需要透明同時防電磁波泄露的需求，採取無機/高分子納米復合技術路線，研製納米氧化錫、氧化銦錫/丙烯酸酯類聚合物納米復合材料。
  6. Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior. ito has high prominent transmittance, high infrared reflectance, good electrical conductivity, ito applied as gas sensors, photovoltaic devices, heat reflecting mirrors, solar cells, flat panel displays, liquid crystal displays, electroluminescent, devices and organic light - emitting diodes ( oled ) etc. although preparations and applications of ito films have been studied deeply. nano - ito composites hardly studied

    氧化銦錫（ ito ）是一種高簡並的n型半導體，由於具有導電性，可見光高透過率，紅外反射性，穩定的化學性，被廣泛應用於熱反射建築玻璃、抗靜電塗層，太陽能電池，熱發射鏡，平板顯示器和液晶顯示屏，傳感器，有機光致二級管（ oled ）等方面，國內外對高質量的ito薄膜的制備和應用進行了深入的研究，但是很少有ito納米粒子與高分子材料復合的報道。
  7. Fachun lai, limei lin, zhigao huang, rongquan gai, yan qu ， effect of thickness on the structure, morphology and optical properties of sputter deposited nb2o5 films, applied surface science 253 ( 4 ), 1801 - 1805 ( 2006 )

    李雪蓉，賴發春，林麗梅，瞿燕，測量條件對摻錫氧化銦薄膜電學測量結果的影響，物理實驗已接受待發表（ 2007 ）
  8. Antimony doped tin oxide ( ato ) and indium tin oxide ( ito ) thin films have been prepared by a sol - gel process using inorganic metal salts as precursors. the effects of heat - treatment atmosphere, temperature, time and dopant content on the electrical and optical properties of thin films were investigated. the fine patternings of the ato films were fabricated by chemical modification and sol - gel method

    本文以無機鹽為出發原料，採用溶膠?凝膠法制備了光學和電學性能較為優良的摻銻二氧化錫（ ato ）薄膜和摻錫氧化銦（ ito ）薄膜，進一步研究了熱處理氣氛、溫度、時間、摻雜量對薄膜電學及光學性能的影響。
  9. It adopts the intermediate frequency power ; it not only can plate single films or multilayer membrane, such as titanium nitrides, titanium carbide, zirconium nitrides, chromium nitride, titanium, nickel, chromium and copper etc. but also can plate the ito, al2o3, sio2, tio2 and zro etc. furthermore, it can plate multilayer membrane after being equipped with multi - targets with top grade quality and fast speed, as well as advantages of other plating methods ; therefore it is one super - hard membrane equipment with excellent performance

    採用先進的中頻電源，濺射速度快，不但可以鍍制氮化鈦碳化鈦氮化鋯氮化鉻及鈦鎳鉻銅金銀等等單一膜層或復合膜層，而且可以鍍制銦錫合金ito氧化鋁al2o3二氧化硅sio2氧化鈦tio2氧化鋯zro等等膜層，另外其配置多靶可以鍍制多層膜，不但鍍制膜層細膩而且鍍制速度非常快，兼有其他鍍法的優點，所以是一種性能非常優良的鍍制超硬膜設備。
  10. Indium - tin oxide ito

    銦錫氧化玻璃
  11. Indium tin oxide

    銦錫氧化物
  12. The main transparent conductive oxide include indium tin oxide ( ito ), al - doped zno ( azo ), tin antimony oxide ( ato ) etc. ito is important material of making the transparent electrode

    目前應用廣泛的透明導電氧化物薄膜主要有氧化銦錫薄膜（ ito ） 、氧化鋅鋁膜（ azo ） 、摻銻氧化錫（ ato ）等。銦錫氧化物（ ito ）是製造透明電極的重要材料。
  13. Due to its excellent electro - optical properties such as high electrical conductivity, transparency to light, high substrate adherence, good hardness, and chemical inertness the applications in various fields : transparent electrodes for display devices, transparent coatings for solar energy heat mirrors, windows films etc. among all of the investigations on ito, the research on its thin films has been the most interesting issue for several decades

    因為ito薄膜的優良光電性能、很強吸附能力、硬度高、化學性質穩定，使得ito薄膜廣泛地應用於很多領域：太陽能電池、液晶顯示器、現代戰機和巡航導彈的窗口等。在銦錫氧化物（ ito ）的研究領域里，有關ito薄膜的研究進行了幾十年。
  14. Deposition of additional thin layers of indium tin oxide and other compounds next to the electrodes altered the interaction of the thicker layers and also improved the efficiency of the injection of holes and electrons, thereby further upping the overall power efficiency of the fluorescent oled

    將薄層氧化銦錫及其他化合物附置在電極旁，可以改變厚層間的交互作用，並改善電洞及電子的注入效率，因而可以進一步增加螢光oled的整體用電效率。
  15. The transparent conductive glass with indium - tin oxide films used in liquid crystal display

    液晶顯示器用氧化銦錫透明導電玻璃
  16. Among these methods, magnetron sputtering is the most widely used technique for preparing thin films, owing to its high deposition rate and good uniformity etc. ito films were prepared by rf and dc magnetron sputtering in pure argon gas atmosphere, using in2o3 and in target mixed with sno2 ( 10wt % ) and sn ( 7wt % ) respectively

    其中磁控濺射工藝具有沉積速率高均勻性好等優點而成為一種廣泛應用的成膜方法。本研究課題分別以氧化銦錫靶和銦錫合金靶為靶材，採用射頻磁控濺射和直流反應磁控濺射工藝在氬氣氣氛中沉積ito薄膜。靶材中sno _ 2和sn的摻雜重量比例分別為10和7 。
  17. But the composite must have enough pervious light gap between conducting particles, or the particle size is less than the wavelength of visible light. so preparation of indium, tin oxide ( in2o3 / sno2 ) nano powders by promising method of sol - gel in liquid and surface modification were studied. we hope to summarize general nano preparation, modification and characterization methods

    所以本研究的目的是利用液相法中較有前途的溶膠-凝膠法制備氧化銦、氧化錫及其復合氧化物（ in _ 2o _ 3 sno _ 2 ）納米粉料，並對其進行表面修飾和綜合表徵，為大課題提供原材料並可望總結出普遍可行的納米粒子制備、修飾及表徵方法。
  18. Experiment of hydrogen evolution showed that the evolution hydrogen amount of current collector coated by mono - layer plating or double - layer plating was less than without them in 7. 0m koh solution with zinc power, and that of the double - layer plating of zn - in, sn - in was the least. cyclic voltammetry - indicated that there is an obvious reduction peak of hydrogen at the potential of about - 0. 8v vs

    用動態析氫實驗表徵，發現沉積單、雙層金屬的集電體在含鋅粉的7 . 0m的氫氧化鉀溶液體系中的析氫量比無沉積層的銅集電體析氫量要小，其中，沉積鋅銦、錫銦雙層的析氫量最小。
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