氧飽和計 的英文怎麼說

中文拼音 [yǎngbǎohéjì]
氧飽和計 英文
oxygen saturation fete
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 飽 : Ⅰ形容詞1 （吃足） have eaten one s fill; be full 2 （充實; 飽滿） full; plump Ⅱ副詞（充足; 充分）...
  • 和 : 和動詞（在粉狀物中加液體攪拌或揉弄使有黏性） mix （powder） with water, etc. : 和點兒灰泥 prepare some plaster
  • 計 : Ⅰ動詞1 （計算） count; compute; calculate; number 2 （設想; 打算） plan; plot Ⅱ名詞1 （測量或計算...
  • 飽和 : （在一定溫度壓力下, 溶液可含溶質的量達到最大限度, 不能再溶解, 泛指事物達到最高限度） saturation; saturated
  1. In this thesis, the development of emulsion polymerization theory and related new technologies are comprehensively reviewed, and the synthetic technologies of acrylate latex modified by organosilicon both at home and abroad are also reviewed. based on the current development and research in this field, attentions of this study are focused on three ways for preparing novel acrylate latexes modified by organosilicons, that is, 1 ) the acrylate monomers are copolymerized with unsaturated silicons by emulsion copolymerization ; 2 ) a new latex with microphase separation morphology is synthesized, which shows a core - shell structure character ; 3 ) soap - free polymerization is explored for preparing a higher - performance latex using an unsaturated silicon monomer, different acrylates and a reactive emulsifier. by using techniques of delaying addition of organosilicon monomer and a hydrolysis inhibitor, the hydrolysis and condensation of 3 - ( trimethoxysilyl ) propyl methacrylate during polymerization can be effectively prevented, as a result, organosilicon content in the macromolecular chain is increased

    同時採用有機硅單體延遲滴加及添加水解抑制劑等技術，有效防止了-甲基丙烯酰氧基丙基三甲氧基硅烷在乳液聚合過程中的過渡水解及縮合反應，提高了聚合物大分子鏈中有機硅鏈節的含量；利用紅外光譜與差示掃描量熱儀對產物分子結構進行了表徵，並通過對共聚產物力學和吸水率的測試，證實了本研究所制備的有機硅改性丙烯酸酯共聚物具有比純丙烯酸酯聚合物更優良的力學及耐水性能；從分子設計角度出發，利用醇解反應合成出水解、縮合反應速率較慢的兩種新型不飽和有機硅單體： ?甲基丙烯酰氧基丙基三乙氧基硅烷和?甲基丙烯酰氧基丙基三異丙氧基硅烷；利用核磁共振對新型硅烷單體結構進行了證實；研究表明利用新型硅烷單體可以制備出高硅烷含量的有機硅改性丙烯酸酯乳液，且其聚合產物具有較高的力學及耐水性能。
  2. Oxygen saturation monitor pulsox - 2 is easy to operate, easy to read, high stability, high durability, economical and long lasting battery. it s as simple as putting on a glove. for daily spot checking of spo2 and pulse rate. in hospitals, clinics, doctor s offices, home health care environments

    精細小型pulsox - 2血氧飽和計操作簡單，尤如戴上手套；並配備大型液晶顯示，讀取容易、穩定性高、耐用、經濟及特長電池操作，是在醫院、診所、醫生辦公室而至家庭健康護理，並進行定點spo2含量和脈搏測量的不可缺少的幫手。
  3. Our item choiced msp430f149, a sort of singlechip as controller, designed our hardware electrocircuit to get the pulse wave singnal, and used msp430f149 to continuously search and calculate the peak - peak value of the pulse wave, and compute oxygen saturaction. in our study, in order to hurdle the dirft of baseline caused by the physiological difference of human bodies. we designed one circuit which can automatically regulate of the baseline of signal

    本文以msp430f149晶元為控制器，設計硬體電路提取脈搏波信號，連續檢測脈搏波峰?峰值，計算氧飽合度。本課題採用了基線自動調節電路，以克服不同人體生理差異引起的基線漂移；設計了直流截取電路和可控積分放大電路，以滿足臨床連續監測的特殊需要，解決信號飽和問題。
  4. So in this paper, the principle of electroptical non - invasive dual - ray methods are fist present in detail. in the theorem of simple structure and low power consumption, we select detecter with fitble wavelenth and low power msp430 processor, and design high stable ray - emitt circuit, low noise pre - amplifier, background disturbance counteract circuit, the signal are low - filtered and sent to msp430 " a / d transform directly to digital signal processing

    為此，本文詳細分析了光電無創雙光束法測定脈搏血氧飽和度的基本原理，在結構簡單，功耗小的原則下，選用合適發光波長的探頭和信號處理器，設計出光強穩定的發光電路，低噪聲前級，以及本底干擾對消電路，通過兩級低通直接送至ti公司的超低功耗混合信號處理器msp430進行a / d變換得到原始的數字信號。
  5. Abstract : the saturation behavior of stress current is studied. the three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation. a further investigation by statistics experiments shows that there are definite relationships among time constant of trap generation, the time - to - breakdown, and stress voltage. it also means that the time constant of trap generation can be used to predict oxide lifetime. this method is faster for tddb study compared with usual breakdown experiments

    文摘:基於一階速率方程，討論了恆定電壓應力下應力電流的飽和行為.通過對應力電流的擬合，發現存在三類缺陷產生的前身.更進一步的統計實驗顯示，在缺陷產生時間常數、擊穿時間以及應力電壓之間存在著明確的關系.這意味著缺陷產生時間常數能夠被用於有效預測氧化層的壽命.與常規的氧化層擊穿實驗相比，基於缺陷產生時間常數的預測更快、更有效
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